CONSTANT-TEMPERATURE AGING METHOD TO CHARACTERIZE COPPER INTERCONNECT METALLIZATIONS FOR STRESS-INDUCED VOIDING

JESD214.01

Published: Aug 2017

This document describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method may be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time.

Committee(s): JC-14.2

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