Global Standards for the Microelectronics Industry
ADDENDUM No. 10 to JESD24 - TEST METHOD FOR MEASUREMENT OF REVERSE RECOVERY TIME trr FOR POWER MOSFET DRAIN-SOURCE DIODES:
JESD24-10
Published: Aug 1994
Status: Reaffirmed> October 2002
Test method to measure the reverse recovery characteristics of the drain source diode of a power MOSFET.
Committee(s): JC-25
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