Global Standards for the Microelectronics Industry
Guideline for Evaluating dv/dt Robustness of SiC Power Devices, Version 1.0
This document provides stress procedures, general failure criteria and documentation guidelines such that the dv/dt robustness can be demonstrated, evaluated and documented. This document gives examples for test setups which can be used and the corresponding test conditions. Additionally, criteria are explained under which device manufacturers can select an appropriate test setup.