Global Standards for the Microelectronics Industry
single-event gate rupture (SEGR)
An event in which a single energetic-particle strike results in a breakdown and subsequent conducting path through the gate oxide of a MOSFET.
NOTE An SEGR is manifested by an increase in gate leakage current and can result in either the degradation or the complete failure of the device.
References:
JEP133B, 3/05
JESD57#, 12/96
