reactive ion etching (RIE)

A plasma etching process using a relatively low gas pressure and high electric field, in which material is removed primarily by chemical reaction with active radicals although some material may also be removed physically by ion bombardment.

NOTE 1 A mask is usually used in order to remove only selected areas.

NOTE 2 By convention the wafer is mounted on the "hot" RF electrode.

References: 

JESD99B, 5/07