modulation-doped field-effect transistor (MODFET)

A metal-semiconductor field-effect transistor in which a doped material forms a heterojunction with an undoped channel; the doped material supplies electrons to the undoped channel whose high electron mobility results in enhanced channel conductance.

NOTE 1 Typically an aluminum gallium arsenide layer is grown on an undoped gallium arsenide layer by an epitaxial growth technique.

NOTE 2 Other popularly used acronyms for this device are HEMT for high-electron-mobility transistor, SDHT for selectively doped heterostructure transistor, and TEGFET for two-dimensional electron-gas field-effect transistor.


JESD77-B, 2/00

User login

Browse Alphabetically

A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z

Standards and Documents Assistance

Contact Julie Carlson, 703-624-9230

Dictionary RSS Feed

Subscribe to the JEDEC Dictionary RSS Feed to receive updates when new dictionary entries are added.