metal-oxide-semiconductor field-effect transistor (MOSFET)

An insulated-gate field-effect transistor in which the insulating layer between each gate electrode and the channel is oxide material and the gate is metal or another highly conductive material. (Ref. IEC 747‑8.)

References: 

JESD24, 7/85
JESD28-A, 12/01
JESD60A, 9/04
JESD77-B, 2/00
JESD90, 11/04