Dictionary V

voltage turn-off delay time (t_d(off)v)

The time interval during which an input pulse that is switching the transistor from a conducting to a nonconducting state falls from 90% of its peak amplitude and the drain voltage waveform rises to 10% of its off-state amplitude, ignoring spikes caused by interaction with other components or parasitics, e.g., freewheeling-diode recovery current and parasitic inductance.

References:

JESD24, 7/85
JESD77-B, 2/00

voltage turn-off time (t_off(v))

The sum of voltage turn-off delay time and voltage rise time, i.e., t_off(v) = t_d(off)v + t_rv.

References:

JESD24, 7/85
JESD77-B, 2/00

voltage turn-on delay time (t_d(on)v)

The time interval during which an input pulse that is switching the transistor from a nonconducting to a conducting state rises from 10% of its peak amplitude and the drain voltage waveform falls to 90% of its off-state amplitude, ignoring spikes caused by interaction with other components or parasitics, e.g., freewheeling-diode recovery current and parasitic inductance.

References:

JESD24, 7/85
JESD77-B, 2/00

voltage turn-on time (t_on(v))

The sum of voltage turn-on delay time and voltage fall time, i.e., t_d(on)v = t_d(on)v + t_fv.

References:

JESD24, 7/85
JESD77-B, 2/00

voltage, dc or average [base-collector (V_BC)]

The dc voltage between the terminal indicated by the first subscript and the reference terminal (stated in terms of the polarity at the terminal indicated by the first subscript).

References:

JESD10, 9/81

voltage, dc or average [base-emitter (V_BE)]

The dc voltage between the terminal indicated by the first subscript and the reference terminal (stated in terms of the polarity at the terminal indicated by the first subscript).

References:

JESD10, 9/81

voltage, dc or average [collector-base(V_CB)]

The dc voltage between the terminal indicated by the first subscript and the reference terminal (stated in terms of the polarity at the terminal indicated by the first subscript).

References:

JESD10, 9/81

voltage, dc or average [collector-emitter (V_CE)]

The dc voltage between the terminal indicated by the first subscript and the reference terminal (stated in terms of the polarity at the terminal indicated by the first subscript).

References:

JESD10, 9/81

voltage, dc or average [collector-emitter (V_CE)]

The dc voltage between the terminal indicated by the first subscript and the reference terminal (stated in terms of the polarity at the terminal indicated by the first subscript).

References:

JESD10, 9/81

voltage, dc or average [emitter-base(V_EB)]

The dc voltage between the terminal indicated by the first subscript and the reference terminal (stated in terms of the polarity at the terminal indicated by the first subscript).

References:

JESD10, 9/81

voltage, dc or average [emitter-base(V_EB)]

The dc voltage between the terminal indicated by the first subscript and the reference terminal (stated in terms of the polarity at the terminal indicated by the first subscript).

References:

JESD10, 9/81

voltage, dc or average [emitter-collector (V_EC) (V_CB)]

The dc voltage between the terminal indicated by the first subscript and the reference terminal (stated in terms of the polarity at the terminal indicated by the first subscript).

References:

JESD10, 9/81

voltage, dc or average [emitter-collector (V_EC)]

The dc voltage between the terminal indicated by the first subscript and the reference terminal (stated in terms of the polarity at the terminal indicated by the first subscript).

References:

JESD10, 9/81

voltage-reference diode

A diode that is normally biased to operate in the breakdown region of its voltage-current characteristic and that develops across its terminals a reference voltage of specified accuracy when biased to operate throughout a specified current and temperature range. (Ref. IEC 747‑1.)

Graphic symbol (ref. IEEE Std 315):

References:

JESD77-B, 2/00

voltage-regulator diode

A diode that is normally biased to operate in the breakdown region of its voltage-current characteristic and that develops across its terminals an essentially constant voltage throughout a specified current range. (Ref. IEC 747‑1.)

Graphic symbol (ref. IEEE Std 315):

References:

JESD77-B, 2/00

voltage-variable-capacitance diode (VVC or VVCD)

Synonym for "varactor diode".

References:

JESD77-B, 2/00

volume resistivity (r_v)

The dc voltage per unit thickness, applied across two electrodes in contact with a specimen, divided by the current per unit area passing through the system.

NOTE 1 Volume resistivity is generally expressed in ohm-centimeters.

NOTE 2 When concentric ring electrodes are used as described in ASTM-D991, volume resistivity is calculated by using the following equation:

volume resistivity (r_v) = π × (D₁)² × R/4T

where

D₁ = diameter of inner electrode or disk;
R = measured resistance in ohms;
T = thickness of specimen.

References:

JESD625-A, 12/99

VPP

See "programming power voltage".

References:

VRAM

See "multiport DRAM".

References:

VREF

See "reference power supply".

References:

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