Dictionary V

See "integrated circuit, very-high-speed".

An electrically conducting path that passes through an insulating material and connects conducting layers in two or more planes.

JESD99B, 5/07

See "multiport DRAM".

The theoretical point or region in a simplified model of the thermal and electrical behavior of a semiconductor device at or in which all the power dissipation within the device is assumed to occur.

JESD99B, 5/07

The control and organization of main storage to create a memory-mapping scheme that augments main storage by transferring in a block of data from mass storage whenever a portion of that block is addressed.

NOTE 1 These transfers do not require implementation by the programmer.

NOTE 2 The use of virtual memory causes mass storage to appear as part of main storage.

JESD100-B, 12/99

(1) A temperature representing the temperature of the junction(s) calculated on the basis of a simplified model of the thermal and electrical behavior of the semiconductor device.

NOTE The term "virtual-junction temperature" is taken from IEC standards. It is particularly applicable to multijunction semiconductors and is used to denote the temperature of the active semiconductor element when required in specifications and test methods. The term "virtual-junction temperature" is used interchangeably with the term "junction temperature".

(2) The temperature of the virtual junction.

JESD51-1#, 12/95
JESD77-B, 2/00
JESD282-B, 4/00

JESD99B, 5/07

Deprecated synonym for "light-emitting diode".

JESD77-B, 2/00

A reference mark, chamfer, notch, tab, flat, or similar feature that identifies the number-one terminal position.

RS-308-A, 8/81

See "visible-light-emitting diode (deprecated)".

Very-large-scale integration.

JESD99B, 5/07

See "vertical field-effect transistor".

A memory in which the data content is lost when power is no longer supplied to it. (Ref. IEC 748‑2.)

JESD100-B, 12/99

The ratio of the change in voltage at the output terminal with respect to ground (or change in voltage between the output terminals) to the change in common-mode input voltage with the differential input voltage held constant.

JESD99B, 5/07

The ratio of the change in voltage at the output terminal with respect to ground (or change in voltage between the output terminals) to the change in differential input voltage with the common-mode input voltage held constant.

JESD99B, 5/07

The ratio of the change in single-ended output voltage of a differential amplifier to the change in single-ended input voltage.

JESD99B, 5/07

The time interval during which an input pulse that is switching the transistor from a nonconducting to a conducting state rises from 10% of its peak amplitude and the collector voltage waveform falls to 90% of its on-state amplitude, ignoring spikes caused by interaction with other components or parasitics, e.g., freewheeling-diode recovery current and parasitic inductance.

JESD77-B, 2/00

The time interval during which the collector (or drain) voltage changes from 90% to 10% of its peak off-state value, ignoring spikes caused by interaction with other components or parasitics, e.g., freewheeling-diode recovery current and parasitic inductance.

JESD24, 7/85
JESD77-B, 2/00

Commonly used as a synonym for "voltage amplification".

JESD99B, 5/07

A circuit or portion of a circuit that provides isolation between the load and the supply to be regulated so that the load voltage remains relatively independent of load current or input voltage fluctuations.

JESD99B, 5/07

The time interval during which the collector (or drain) voltage changes from 10% to 90% of its peak on-state value, ignoring spikes caused by interaction with other components or parasitics, e.g., freewheeling-diode recovery current and parasitic inductance.

JESD24, 7/85
JESD77-B, 2/00