Global Standards for the Microelectronics Industry
Dictionary T
test mode select (TMS)
A control input that enables the scan test clock and is used to select test modes.
References:JESD21-C, 1/97
test pattern
(1) A set of test vectors.
(2) A circuit or elements processed in the semiconductor wafer to act as test sites for monitoring fabrication processes
References:JESD12-5, 8/88
JESD99B, 5/07
test program
A test pattern and instructions suitable for use on automatic test equipment.
NOTE A test program may be used to perform functional and parametric (ac, dc, or other) tests.
References:JESD12-5, 8/88
test signal
The nature of the electrical signal used to measure electrical model parameters. It can be characterized by risetime, pulse shape, frequency, amplitude, etc.
References:JEP123, 10/95
test structure
A passive metallization structure, including a test line, that is fabricated on a semiconductor wafer by procedures used to manufacture microelectronic integrated devices.NOTE Connections are provided to make Kelvin-like resistance measurements of the test line, i.e., two taps for sensing voltage when two other terminals force a current through the line. Typically, these terminals are located at the ends of the test line in single-level structures, while multi-level structures have vias that connect the ends of the test line to the over- or underlying metal level in which the terminals are located.
References: JESD33B#, 2/04JESD61A.01, 10/07
test synthesis
Creation and insertion of test circuitry to improve testability of a design.
References:JESD12-1B, 8/93
JESD99B, 5/07
test vector
A single instance of input stimuli and expected output responses.
References:JESD12-5, 8/88
test vehicle
A circuit or IC designed for the purpose of evaluating one or many device characteristics.
NOTE 1 For the purposes of JESD89, the characterization is the soft-error sensitivity of a particular process technology, but the test vehicle can incorporate other structures used to characterize different parameters, such as yield, speed, voltage margin, etc.
NOTE 2 This test vehicle is not typically a product but is a dedicated component or section of an IC chip designed to be used in predicting the SER of a product.
References:JESD89A, 10/06
test-pattern fault coverage
The ratio of the total number of detected faults to the total number of detectable faults.
References:JESD12-5, 8/88
tester strobe time
The time interval from the beginning of a test clock cycle to the instant when an output of a device is observed and compared to an expected result.
References:JESD12-1B, 8/93
JESD99B, 5/07
testing of dynamic devices
Latch-up trigger testing of a device in a known stable state, at the minimum-rated clock frequency applied to the device.
References:JESD78A, 2/06
tetrode field-effect transistor
A field-effect transistor having two independent gate regions, a source region, and a drain region. (Ref. IEC 747‑8.)
NOTE 1 A substrate terminated externally and independently of other elements is considered a gate for the purposes of this definition.
NOTE 2 If no confusion is likely, the term may be abbreviated to "field-effect tetrode."
References:JESD24, 7/85
JESD77-B, 2/00
TF
See "test function".
References:thermal impedance, (transient) (Zè, Zθ(t), or Zth) (formerly θ(t))
The change in temperature difference between two specified points or regions that occurs during a time interval divided by the step-function change in power dissipation that occurred at the beginning of the interval and caused the change in temperature difference.
References:JESD10#, 9/81
JESD51-1#, 12/95
JESD77-B, 2/00
JESD282-B, 4/00
thermal impedance, junction-to-ambient (ZèJA, ZθJA(t), or ZthJA) (formerly θJ‑A(t))
The transient thermal impedance from the semiconductor junction(s) to the ambient.
References:JESD10, 9/81
JESD77-B, 2/00
thermal impedance, junction-to-case (ZèJC, ZθJC(t), or ZthJC) (formerly θJ‑C(t))
The transient thermal impedance from the semiconductor junction(s) to a stated location on the case.
References:JESD10, 9/81
JESD77-B, 2/00
thermal impedance, junction-to-lead (ZèJL or ZthJL)
The transient thermal impedance from the semiconductor junction(s) to a stated location on a lead.
References:JESD77-B, 2/00
thermal impedance, junction-to-mounting-surface (ZèJM or ZthJM)
The transient thermal impedance from the semiconductor junction(s) to a stated location on the mounting surface.
References:JESD77-B, 2/00
