Global Standards for the Microelectronics Industry
Dictionary T
T1
See "terminal 1".
References:T2
See "terminal 2".
References:table drop height
The free-fall drop height of the drop table needed to attain the prescribed peak acceleration and pulse duration.
References:JESD22-B111, 7/03
tangential sensitivity (ST)
The input signal power to a circuit that produces a 6-dB signal-to-noise ratio at the output.
References:JESD99B, 5/07
target
The desired value for a statistic of a characteristic or parameter of a process node.
References:EIA-557-A, 7/95
target stress temperature (Ttest)
The desired test-line temperature under stress.
References:JESD61, 4/97
target time to failure (tFT)
The desired time it should take for the resistance of the test structure to first equal or exceed the failure resistance criterion, RFC, while the structure is under stress from the SWEAT algorithm.
References:JEP119A, 8/03
TCK
See "test port clock".
References:TCR(T)
See "temperature coefficient of resistance".
References:TDI
See "test data in".
References:TDO
See "test data out".
References:technical review board (TRB)
A supplier's dedicated system of review that is responsible for the implementation of the quality management program, maintenance of all certified and qualified processes, process change control, reliability data analysis, failure analysis, device recall procedures, and qualification status of the technology.
References:JEP133B, 3/05
technology acceptance, surface finish
Acceptance testing of the surface finish material set and the manufacturing processes that include a defined set of base metals, underplating metals, surface finish alloy, surface finish bath chemistry, and process flow steps.
References:JESD201, 3/06
technology rating
An assessment of the metrics established to evaluate technology attributes.
References:JEP146#, 6/03
temperature at failure (TF)
The value of the last recorded estimated mean temperature of the test structure during the control cycle before the failure criterion, RFC, is satisfied.
References:JEP119A, 8/03
temperature coefficient
The change in a parameter divided by the change in temperature.
NOTE This quotient is the average value over the total temperature change. The change in the parameter may or may not be normalized to a reference value of the parameter. The specific term should be "temperature coefficient of (parameter)".
References:JESD77-B, 2/00
JESD99B, 5/07
temperature coefficient of input bias current (αIIB)
The change in input bias current divided by the change in temperature.
NOTE This quotient is the average value for the total temperature change. The change in input bias current is usually not normalized to the initial value of input bias current.
References:JESD99B, 5/07
temperature coefficient of input offset current (αIIO)
The change in input offset current divided by the change in temperature.
NOTE This quotient is the average value of the total temperature change. The change in input offset current is usually not normalized to the initial value of input offset current.
References:JESD99B, 5/07
temperature coefficient of input offset voltage (αVIO)
The change in input offset voltage divided by the change in temperature.
NOTE This quotient is the average value for the total temperature change. The change in input offset voltage is usually not normalized to the initial value of input offset voltage.
References:JESD99B, 5/07
temperature coefficient of output voltage (αVO)
The change in output voltage, usually expressed as a percentage of the output voltage, divided by the change in temperature.
NOTE This is the average value for the total temperature change.
References:JESD99B, 5/07
