Dictionary S

second breakdown trigger current (It2)

The current point at which a transistor enters its second breakdown region under ESD pulse conditions and is irreversibly damaged. References:

JEP155#, 8/08

second-level assembly

The attachment of a component to the next level of assembly packaging. References:

JEP150, 5/05
JEP156, 3/09

secondary threshold crossing (of a clock signal)

The threshold crossing of a clock signal indicating the second part of the clock cycle.

References:

JESD65B, 9/03

sector

Synonym for "block".

References:

JESD100-B, 12/99

SEE

See "single-event effect".

References:

SEFI

See "single-event functional interrupt".

References:

SEGR

See "single-event gate rupture".

References:

SEL

See "single-event latch-up".

References:

semiconductor (material) (within a semiconductor device)

A material in which the electric current is made up of both negative and positive mobile charge carriers (i.e., conduction electrons and holes, respectively).

References:

JESD77-B, 2/00
JESD99B, 5/07

semiconductor (nonspecific)

A substance whose conductivity due to the charge carriers of both signs is normally in the range between that of metals and that of insulators and in which the charge carrier density can be changed by external means.

References:

JESD77-B, 2/00
JESD99B, 5/07

semiconductor controlled rectifier (SCR); silicon controlled rectifier (SCR)

Synonyms for "thyristor, reverse blocking triode".

References:

JESD77-B, 2/00

semiconductor device (general term)

A device whose essential characteristics are due, in whole or in part, to the flow of charge carriers within a semiconductor.

NOTE For specification purposes, a semiconductor device must be considered to be either a discrete semiconductor device or an integrated circuit.

References:

JESD10, 9/81
JESD77-B, 2/00#
JESD99B, 5/07
JESD282-B#, 4/00

semiconductor diode

A semiconductor device having two electrodes and exhibiting a nonlinear voltage‑current characteristic; in more restricted usage, a semiconductor device that has the asymmetrical voltage‑current characteristic exemplified by a single p‑n junction. (Ref. IEEE Std 100.)

References:

JESD77-B, 2/00

semiconductor junction

See "junction (in a semiconductor device)".

References:

semiconductor rectifier diode

A semiconductor diode intended to be used for current and voltage rectification.

NOTE 1 The term "semiconductor rectifier diode" includes the associated housing and any integral mounting and cooling attachments.

NOTE 2 The term "rectifier cell" is sometimes used as a synonym for "rectifier diode" when the diode is an element of a rectifier stack.

Graphic symbol (ref. IEEE Std 315):

References:

JESD77-B, 2/00
JESD282-B, 4/00

semiconductor signal diode

A semiconductor diode intended to be used for signal processing.

Graphic symbol (ref. IEEE Std 315):

References:

JESD77-B, 2/00

sensitive volume

A region, or multiple regions, containing nodes whose states can be changed by incident radiation.

NOTE The sensitive volume is dependent on the angle of the incident radiation, the mass and energy of the incident particles, and the density and type of material in the volume being penetrated by the incident radiation.

References:

JESD57#, 12/96
JESD89A, 10/06

sensitivity

(1) The degree to which a process metric or output responds to the stimulation of an input.

(2) The change in a parameter divided by the change in a circuit variable other than temperature.

NOTE This quotient is the average value over the total change of the circuit variable. The change in the parameter may or may not be normalized to a reference value of the parameter. The specific term should be "(circuit variable) sensitivity".

References:

JEP132, 7/98

JESD99B, 5/07

sequential fault

A functional fault that is affected by the sequence of the input stimuli.

References:

JESD12-5, 8/88

sequential logic function

A logic function in which there exists at least one combination of input states for which there is more than one possible resulting combination of states at the outputs. (Ref. ANSI/IEEE Std 91.)

NOTE The outputs are functions of variables in addition to the present states of the inputs, such as time, previous internal states of the element, etc.

References:

JESD99B, 5/07

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