Global Standards for the Microelectronics Industry
Dictionary S
scan, full
A methodology of design in which every bistable element is a scan cell.
References:JESD12-1B, 8/93
JESD99B, 5/07
scan, partial
A methodology of design in which some, but not all, bistable elements are scan cells.
References:JESD12-1B, 8/93
JESD99B, 5/07
scatter diagram
A graph of the value of one characteristic versus another characteristic.
References:EIA-557-A, 7/95
SCCD
See "surface-channel charge-coupled device".
References:schematic capture
Use of a computer system to enter a graphical representation of the functional blocks and the interconnections of a circuit.
References:JESD12-1B, 8/93
JESD99B, 5/07
Schmitt trigger
A digital circuit designed to have significant hysteresis, i.e., the difference between the positive-going and negative-going input threshold voltages, and usually having only one input.
References:JESD99B, 5/07
Schottky diode
See "diode, Schottky".
References:Schottky-barrier charge-coupled device
A buried-channel charge-coupled device that uses a Schottky barrier junction to isolate the transfer gate.
References:JESD99B, 5/07
SCR
See "semiconductor controlled rectifier".
References:scrape (on a package)
A location where material has been removed or displaced. Burnishes and rub marks where material is not displaced shall not be considered as scrapes. Tool marks in the basis metal, uniformly covered by plated or deposited metal, shall not be considered to be pits or scrapes.
References:JESD27#, 8/93
scratch-pad memory
A read/write memory (RAM) device or register that is used to temporarily store intermediate results (data) or memory addresses (pointers).
References:JESD100-B, 12/99
screen-printing (of a thick-film circuit)
The deposition of conductive, resistive, or insulating films onto a substrate by pressing pastes ("inks") through screens.
References:JESD99B, 5/07
SCSOA
See "short-circuit safe operating area".
References:SDQ(n)(x)
See "serial data input/output".
References:SDRAM
See "synchronous dynamic random-access memory".
References:SE
See "serial port enable" and "sync enable".
References:seated height (of a package)
The distance from the seating plane to the top of the body including any protrusions or rigid terminals. Flexible terminals are not included in determining the seated height.
References:RS-308-A, 8/81
seating plane (1) (of a package, general)
The reference plane that designates the interface between the package or its terminals and the surface on which it is mounted.
(2) (of a surface-mounted device): The plane formed by the three terminal apexes that exhibit the greatest perpendicular distance from the package substrate, provided that the triangle formed by those three apexes encompasses the projection of the center of gravity (CoG) of the component.
References:RS-308-A, 8/81
JESD22-B108A, 1/03
JESD22-B112, 5/05
SEB
See "single-event burnout".
References:second breakdown
A condition of a transistor, resulting from a lateral current instability, in which the electrical characteristics are determined principally by the spreading resistance of a thermally maintained current constriction. The initiation of second breakdown is observed as a decrease in the voltage sustained by the collector.
NOTE Second breakdown differs from thermal failure in that its initiation cannot be predicted from low-voltage thermal-resistance measurements. Unless the current and duration in second breakdown are limited, the high junction temperature at the current constriction will result in failure, usually as a collector-to-emitter short circuit. Second breakdown can occur at positive, negative, or zero base current.
References:JESD10, 9/81