Global Standards for the Microelectronics Industry
See "row address input".References:
The total radiant flux emitted divided by the total input power.References:
radiant exitance (Me)
The density of the radiant flux leaving an emitter surface, i.e., the radiant flux divided by the area of emitting surface.References:
(1) The process of emitting radiant energy in the form of electromagnetic waves or moving nuclear particles.
NOTE 1 Electromagnetic waves include x-rays, gamma rays, light, etc. These forms of radiation all consist of photons, which are quanta of electromagnetic energy.
NOTE 2 Nuclear particles include alpha particles (helium nuclei), beta particles (electrons), neutrons, and other atomic particles that can transfer energy to a material. Subatomic particles such as quarks are not considered.
(2) Energy radiated in the form of electromagnetic waves or moving nuclear particles.
NOTE See notes to "radiation" (1).
(3) The transmission of heat via electromagnetic waves.References:
Merriam-Webster's Collegiate Dict.
Merriam-Webster's Collegiate Dict.
(1) Increasing the ability of a device to survive one or more types of radiation.
(2) The process whereby the ability of a device to survive one or more types of radiation is increased.References:
radiation-hardness assurance (RHA)
The aspect of product assurance that ensures that parts continue to perform within specifications or degrade in a specified manner when subjected to given radiation environments.References:
radiation-hardness assured (RHA)
Possessing the aspect of product assurance that ensures that parts continue to perform within specifications or degrade in a specified manner when subjected to given radiation environments.References:
radiation-hardness assured capability level (RHACL)
The radiation level to which the die manufacturer guarantees satisfactory performance.References:
radio frequency [RF] microwave hybrid
A hybrid microcircuit that meets one or more of the following criteria:
- it contains input and output terminals or connectors with matched impedance;
- it uses specific impedance transmission lines on an insulating substrate;
- its RF performance characteristics are affected by conductor length, width, or topology.References:
A bipolar (three-state or totem-pole) output that can swing between voltage levels that are essentially equal to the supply voltages.
NOTE This is typically accomplished by driving the active devices from boost voltages or charge pumps.References:
See "random-access memory".References:
RAM read/write, no mask (RR/RW)
A normal RAM read or write access cycle with no SAM or special RAM features or functions actuated.References:
RAM write with new mask (RWNM)
A RAM write cycle in which the data bits that are to be written are controlled by a write mask that is supplied at the beginning of the write cycle on the DQ(n) terminals. A high mask bit normally enables the write function for that bit; a low mask bit leaves the data unaltered.References:
RAM write with old mask (RWOM)
A RAM write cycle in which the data bits that are to be written are controlled by a write mask register that was loaded in a previous cycle. A high mask bit normally enables the write function for that bit; a low mask bit leaves the data unaltered.References:
ramp delay, steady-state (of a multiplying digital-to-analog converter) (td(ramp))
The time separation between the actual curve of the analog output and the theoretical curve (with no delay) for a ramp in reference voltage, after the settling time to steady-state ramp has elapsed.References:
A defect found in a failing device that does not occur in a manner consistent with normal process variation.
NOTE A random defect is not considered to be a normal part of the intrinsic population of a production run. The failure is attributed to defects introduced during production.References:
A set of individuals taken from a population in such a way that each possible individual has an equal chance of being selected.References:
random-access memory (RAM)
(1) A memory in which access to all storage data can be achieved in essentially the same time, independent of the location. In a multiport memory, this term refers to that portion of the array that contains the memory cell array and its drivers, sense amplifiers, control circuitry, and the circuitry associated with the normal random-access data port.
(2) A memory that permits access to any of its address locations in any desired sequence with similar access time to each location. (Adapted from IEC 748‑2.)
NOTE The term "random-access memory", as commonly used, denotes a read/write memory with unlimited data rewrite capability and similar read and write times.References:
A condition in which individual values are not predictable, although they may come from a definable distribution.References:
The difference between the maximum and minimum values. A measure of spread.References: