Global Standards for the Microelectronics Industry
Dictionary P
punch-through voltage (VPT)
The reverse-bias voltage applied to the drain terminal that results in significant drain-to-source current even though the transistor is biased in its off state.
NOTE Punch-through is differentiated from junction breakdown in that the current path is from drain to source instead of from drain to substrate, as is the case for junction breakdown.
References:JESD60A, 9/04
JESD90, 11/04
push-pull output
(1) Two open-circuit outputs operating in complementary fashion so that as the resistance of one increases, the resistance of the other decreases
(2) Originally a synonym for "totem-pole output", this usage is now deprecated.
NOTE The term "push-pull output" is usually applied to linear circuits.
References:JESD99B, 5/07
pushdown storage
Storage in which data are ordered in such a way that the next data element to be retrieved is the most recently stored. (Ref. IEC 824.)
NOTE The method is "last-in, first-out".
References:JESD100-B, 12/99
PUT
See "programmable unijunction transistor".
References:PWT
See "pseudo write transfer".
References:p‑channel charge-coupled device
A charge-coupled device fabricated so that the charges stored in the potential wells are holes.
References:JESD99B, 5/07
p‑channel field-effect transistor
A field-effect transistor that has a p‑type conduction channel. (Ref. IEC 747‑8.)
References:JESD24, 7/85
JESD77-B, 2/00
p‑n boundary
An interface in the transition region between p‑type and n‑type materials at which the donor and acceptor concentrations are equal.
References:JESD77-B, 2/00
p‑n junction; p‑n transition region
A junction between p‑type and n‑type semiconductor regions.
References:JESD77-B, 2/00
p‑type semiconductor
An extrinsic semiconductor in which the mobile-hole density exceeds the conduction-electron density. (Ref. IEC 747‑1.)
References:JESD77-B, 2/00
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