Global Standards for the Microelectronics Industry
Dictionary O
output voltage (of a voltage regulator) (VO)
The regulated voltage presented at the output of a regulator (or current-sensing resistor, if used).
References:JESD99B, 5/07
output voltage drift (ΔVO(Δt))
The change in output voltage, usually expressed as a percentage of output voltage, over a period of time.
References:JESD99B, 5/07
overall average noise figure (of a mixer diode) (O)
The average noise figure of the cascaded combination of a mixer and an IF amplifier.
References:JESD77-B, 2/00
RS-311-A, 11/81
overall charge-transfer efficiency
The fraction of the input signal charge that is transferred as a packet to the output.
References:JESD99B, 5/07
overall symbol grade
The overall quality measure of a two-dimensional bar code symbol determined by machine scanning equipment per guidelines of ISO/IEC 15415 or ANSI INCITS 182-1990. NOTE The grades range from 0 (low) to 4 (high) for ISO/IEC 15415 and from F (low) to A (high) for ANSI INCITS 182-1990. References: JESD22-B114, 3/08overlapping-gate charge-coupled device
A charge-coupled device formed so that adjacent transfer gates overlap and are insulated from one another.
References:JESD99B, 5/07
overload forward current (IFM(OV))
A current whose continuous application would cause the maximum-rated virtual junction temperature to be exceeded, but that is limited in duration such that this temperature is not exceeded.
NOTE Devices may be subjected to overload currents as frequently as called for by the application while being subjected to normal operating voltages. (Ref. IEC 747-2.)
References:JESD77-B, 2/00
JESD282-B, 4/00
overload recovery time (tor)
The time interval required for an amplifier to recover its ability to perform amplification within stated specification limits after the output voltage amplitude has been distorted by the application of a specified input voltage in excess of rated amplitude or rated rate of change.
References:JESD99B, 5/07
overshoot factor
The ratio of (1) the largest deviation of the output signal value from its final steady-state value after a step-function change of the input signal to (2) the absolute value of the difference between the steady-state output signal values before and after the step-function change of the input signal. (Ref. IEC 748‑3.)
References:JESD99B, 5/07
oxide step
A sharp variation of the plane of the oxide on the surface of a planar device.
References:JESD99B, 5/07
oxide, deposited
An oxide layer formed on a surface by methods not requiring the substrate to participate in the reaction.
NOTE Various methods such as pyrolysis, evaporation, or sputtering may be employed.
References:JESD99B, 5/07
oxide, grown
An oxide layer formed on a semiconductor surface by the reaction of the semiconductor material with oxygen.
References:JESD99B, 5/07
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