Global Standards for the Microelectronics Industry
Dictionary M
mask/mode (M)
An indicator used in conjunction with other symbols to create a new pin name to signify that the pin function is either mask- or mode-related.
References:JESD21-C, 1/97
masked write transfer (MWT)
A write transfer in which the transfer of new data from the serial register into the memory array is controlled by a write mask that is supplied on the DG(n) terminals. This mask allows the selective writing of new data into one or more of the data bit planes of the storage array corresponding to the data bits of the parallel array. In a normal implementation, a high M value enables the writing of new data while a low M inhibits the writing and leaves the existing data unchanged. A new mask value must be supplied for each masked write cycle.
References:JESD21-C, 1/97
mass storage
Nonvolatile auxiliary storage of large capacity used for storage of data to which infrequent reference need be made.
References:JESD100-B, 12/99
master slice
An unmetalized wafer containing arrays of circuit elements as determined by subsystem requirements.
NOTE These circuit elements can be interconnected in a variety of ways to achieve different functions.
References:JESD99B, 5/07
match (MA)
An output signal that, when true, indicates that there has been a match (logic compare equal) between data stored in the memory and data presented on a set of input pins as defined in the individual device standard.
References:JESD21-C, 1/97
matched pair (of microwave diodes)
A pair of microwave diodes identical in outline dimensions and with matched electrical characteristics as described in EIA-370.
NOTE The two diodes may both be forward polarity, or one forward and one reverse polarity, or both reverse polarity.
References:JESD77-B, 2/00
material
The one or more substances of which something is made; e.g., an alloy is a material, which in turn is made up of a number of substances.
References:JIG101#, 5/05
material category
Solder paste, lead/terminal finish, or terminal material/alloy of the solder balls used to make the 2nd level interconnect. References: J-STD-609, 5/07maverick product
Product that exhibits significant anomalous characteristics that may cause a higher-than-normal level of failure anywhere in the user's application or user's manufacturing line.
NOTE 1 In this definition, "product" includes the electronic component, the first level packing (e.g., tray, tube, and tape and reel), the shipping container, labeling, and paperwork.
NOTE 2 These significant anomalous characteristics can include initial quality defects, time-dependent reliability defects, defects that affect next level of manufacturing, defects in product delivery process (such as labeling or shipping media), and defects in business process (such as shipping information). The characteristics may or may not be part of an existing product or process monitor, test, or inspection activity.
NOTE 3 Maverick product may come from known noncompliant product, from compliant product that differs significantly from "typical" product (but is still within specification limits), or from "normal" product due to some previously unknown or unmonitored cause.
References:JESD50A, 12/04
maximum component temperature
The temperature that a component should not exceed during assembly as measured on the top side of the component body. References: J-STD-609, 5/07maximum limit
(1) The higher-magnitude limit of a range of some quantity.
(2) For logic levels and temperatures only, the more positive (less negative) limit.
References:JESD99B, 5/07
maximum linear transconductance (gm(max))
The maximum slope of the ID-VGS curve in the linear region.
NOTE 1 The gate voltage is varied in increments no greater than 20 mV from below the turn-on voltage to a value great enough to ensure that the maximum slope point has been reached.
NOTE 2 The slope is calculated using a three-point linear least-squares best-fit algorithm as defined in ASTM F617‑86.
References:JESD28-A, 12/01
JESD60A, 9/04
JESD90, 11/04
maximum material condition (MMC)
A feature of size that contains the maximum amount of material, e.g., maximum shaft diameter or minimum hole diameter.
References:JESD95-1, 3/97
maximum on-state gate-source charge (Qgm)
The gate charge necessary to reach a specified maximum gate-source voltage.
NOTE The magnitudes of gate charge and voltage are referred to the coordinate origin (0,0).
References:JESD24-2, 1/91
maximum operating (supply) voltage
The maximum supply voltage at which a device is specified to operate in compliance with the applicable device specification.
NOTE 1 "Maximum" refers to the magnitude of supply voltage and can be either positive or negative.
NOTE 2 The maximum operating voltage is not the absolute maximum-rated voltage, i.e., the voltage beyond which permanent damage is likely.
References:JESD22-A108C, 6/05
JESD78A, 2/06
JESD89-2, 11/04
JESD89-3, 9/05
maximum operating junction temperature
See "absolute maximum rated junction temperature".
References:JESD90, 11/04
maximum output current swing (IOM)
The peak positive or negative output current swing, referred to zero, that can be obtained without waveform clipping.
References:JESD99B, 5/07
maximum output voltage swing (VOM)
The peak positive or negative output voltage swing, referred to zero, that can be obtained without waveform clipping.
References:JESD99B, 5/07
maximum peak-to-peak output voltage swing (VO(PP))
The maximum peak-to-peak output voltage that can be obtained without waveform clipping when the quiescent dc output voltage is set at a specified reference level.
References:JESD99B, 5/07
maximum rating
A rating that establishes either a limiting capability or a limiting condition beyond which damage to the device may occur. (Ref. IEC 747‑1.)
NOTE 1 A limiting condition may be either a maximum or a minimum.
NOTE 2 IEC 747‑1 refers to such a limiting condition as a "rating (limiting value)".
References:JESD77-B, 2/00
JESD99B, 5/07
