Global Standards for the Microelectronics Industry
Dictionary I
intrinsic failure mechanism
(1) A failure mechanism caused by a natural deterioration in the materials or by the manner in which the materials are combined during fabrication or assembly processes that are within specification limits.
(2) A failure mechanism attributable to natural deterioration of materials processed per specification.
References:JESD659B, 2/07
ion implantation
A method for doping semiconductors wherein the desired dopant is ionized and accelerated by an electric field, penetrates the surface, and is deposited within the semiconductor material.
References:JESD99B, 5/07
IRED
See "infrared-emitting diode".
References:irradiance (Ee)
The density of the radiant flux incident on a surface, i.e., the radiant flux divided by the area of the irradiated surface.
References:JESD77-B, 2/00
IS
See "initialize input (synchronous)".
References:isolation voltage
The rms ac or dc voltage that may be applied continuously between the mounting surface and all of the terminals and also between the terminals of isolated circuits.
References:JESD14, 11/86
isolation withstand voltage
The rms ac or dc voltage used for short-time testing of the insulation between the mounting surface and all of the terminals and also between terminals of isolated circuits.
References:JESD14, 11/86
isolation, dielectric
Electrical isolation of one or more elements of a single-chip semiconductor integrated circuit, achieved by surrounding the elements with an insulating barrier such as semiconductor oxide.
References:JESD99B, 5/07
isolation, junction
Electrical isolation of one or more elements of a single-chip semiconductor integrated circuit, achieved by surrounding the element(s) with a region of the conductivity type that forms a junction and reverse-biasing that junction.
References:JESD99B, 5/07
Pages
- « first
- ‹ previous
- …
- 4
- 5
- 6