Global Standards for the Microelectronics Industry
See "chip enable".References:
See "emitter terminal".References:
The customer initial-use period, typically the first 2,500 to 10,000 hours of operation.References:
The period of initial use by the customer.
NOTE This period typically ranges from three months to one year of operation.References:
early life period (tELF)
The specified early life period as defined by the user or the supplier.References:
early-life-failure (ELF) test
An accelerated test designed to measure the early life failure rate (ELFR).
NOTE The test process is specified in JESD47.References:
early-life-failure rate (ELFR)
The failure rate that may occur during the period of initial use by the customer.References:
Error correction code or error correction coding (see also "EDAC").References:
Error detection and correction.References:
See "electrically erasable programmable read-only memory".References:
See "redundancy (in a memory)".References:
effective average input noise temperature (Te)
The noise temperature in kelvins which, assigned to the input impedance termination(s) at all frequencies of a noise-free equivalent of the transistor, would yield the same total noise power in an output termination as that of an actual transistor connected to noise-free equivalents of the input termination(s).References:
effective LET (for particle radiation)
The linear energy transfer (LET) modified to account for the change in total energy transferred from an incident ion as it traverses a sensitive volume when the path of the ion is not normal to the surface of that volume.
NOTE 1 The cosine dependence may be applicable for this modification. Caution must be utilized; see annex B of JESD57.
LET(θ ) = LET(0°) / cos θ
where θ is the angle of incidence of the ion (i.e., the angle between the ion path and the normal at the point of incidence).
NOTE 2 Many modern devices do not follow the above equation, so the experimenter may have to determine the LET(θ ) from the geometry of a particular device.
NOTE 3 The equation in note 1 is valid only when the depth of the sensitive volume is less than the other two dimensions in the RPP model.References:
efficiency (of a process)
The measure of the ability of a process to produce a desired output (through a common method), as a percentage of the required input (e.g., time, materials, etc.).References:
electrical connection (within a semiconductor device)
An electrically conducting element that is intended to function as a pathway between other elements, including terminals, and whose primary purpose is to conduct electric current in a confined manner.
NOTE The connection may consist of a separate conductive entity such as a wire or metallic film or be an integral part of the body.References:
The distribution of an electrical parameter measured on a random sample of devices from a population (e.g., a wafer lot) at a given temperature, frequency, and power supply range.References:
electrical length of signal path
The time interval required for an electrical signal to traverse the conductor from end to end.References:
electrical model parameter
An electrical characteristic value, such as inductance or capacitance, that, when used in a simulation process, will produce signal transfer characteristics reproducing those measured.References:
electrical test failure after stressing
Synonym for "post-stress electrical failure".References:
electrically erasable programmable read-only memory (EEPROM)
A reprogrammable read-only memory in which the cells at each address can be erased electrically and reprogrammed electrically.References: