Dictionary E

E

See "chip enable".

References:

E; e

See "emitter terminal".

References:

early life

The customer initial-use period, typically the first 2,500 to 10,000 hours of operation.

References:

JESD74, 4/00

early life

The period of initial use by the customer.

NOTE This period typically ranges from three months to one year of operation.

References:

JESD74A#, 2/07

early life period (tELF)

The specified early life period as defined by the user or the supplier.

References:

JESD74A, 2/07

early-life-failure (ELF) test

An accelerated test designed to measure the early life failure rate (ELFR).

NOTE The test process is specified in JESD47.

References:

JESD74A#, 2/07

early-life-failure rate (ELFR)

The failure rate that may occur during the period of initial use by the customer.

References:

JESD74A#, 2/07

ECC

Error correction code or error correction coding (see also "EDAC").

References:

JESD89A, 10/06

EDAC

Error detection and correction.

References:

JESD89A, 10/06

EEPROM

See "electrically erasable programmable read-only memory".

References:

EEPROM redundancy

See "redundancy (in a memory)".

References:

effective average input noise temperature (Te)

The noise temperature in kelvins which, assigned to the input impedance termination(s) at all frequencies of a noise-free equivalent of the transistor, would yield the same total noise power in an output termination as that of an actual transistor connected to noise-free equivalents of the input termination(s).

References:

RS-311-A, 11/81

effective LET (for particle radiation)

The linear energy transfer (LET) modified to account for the change in total energy transferred from an incident ion as it traverses a sensitive volume when the path of the ion is not normal to the surface of that volume.

NOTE 1 The cosine dependence may be applicable for this modification. Caution must be utilized; see annex B of JESD57.

LET(θ ) = LET(0°) / cos θ

where θ is the angle of incidence of the ion (i.e., the angle between the ion path and the normal at the point of incidence).

NOTE 2 Many modern devices do not follow the above equation, so the experimenter may have to determine the LET(θ ) from the geometry of a particular device.

NOTE 3 The equation in note 1 is valid only when the depth of the sensitive volume is less than the other two dimensions in the RPP model.

References:

JESD57#, 12/96

efficiency (of a process)

The measure of the ability of a process to produce a desired output (through a common method), as a percentage of the required input (e.g., time, materials, etc.).

References:

JEP132, 7/98

electrical connection (within a semiconductor device)

An electrically conducting element that is intended to function as a pathway between other elements, including terminals, and whose primary purpose is to conduct electric current in a confined manner.

NOTE The connection may consist of a separate conductive entity such as a wire or metallic film or be an integral part of the body.

References:

JESD77-B, 2/00

electrical distribution

The distribution of an electrical parameter measured on a random sample of devices from a population (e.g., a wafer lot) at a given temperature, frequency, and power supply range.

References:

JESD86, 8/01

electrical length of signal path

The time interval required for an electrical signal to traverse the conductor from end to end.

References:

JEP123, 10/95

electrical model parameter

An electrical characteristic value, such as inductance or capacitance, that, when used in a simulation process, will produce signal transfer characteristics reproducing those measured.

References:

JEP123, 10/95

electrical test failure after stressing

Synonym for "post-stress electrical failure".

References:

electrically erasable programmable read-only memory (EEPROM)

A reprogrammable read-only memory in which the cells at each address can be erased electrically and reprogrammed electrically.

References:

JESD21-C, 1/97
JESD22-A117A, 3/06
JESD100-B, 12/99

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