Dictionary C

channeled gate array

A gate array configuration that contains a predetermined and dedicated area for logic interconnection.

References:

JESD12-1B, 8/93
JESD99B, 5/07

channelless gate array

A gate array configuration that contains no predetermined and dedicated area for logic interconnection.

References:

JESD12-1B, 8/93
JESD99B, 5/07

characteristic

(1) A distinguishing feature of a process or its output on which variables or attributes data can be collected.

(2) An inherent and measurable property of a device. (Ref. IEC 134.)

NOTE Such a property may be electrical, mechanical, thermal, hydraulic, electromagnetic, or nuclear and may be expressed as a value for stated or recognized conditions.

(3) A set of related values, usually shown in graphical form. (Ref. IEC 134.)

References:

EIA-557-A, 7/95
EIA-599-A, 6/98
JEP131A, 5/05
JEP132, 7/98
JESD659B, 2/07

JESD77-B, 2/00
JESD99B, 5/07

JESD77-B#, 2/00
JESD99B, 5/07

characteristic life (for the Weibull distribution)(η)

The time at which F(t) equals (1 - e-1) (≈63.2%).

References:

JESD74A, 2/07

characteristic, (static) (1) (of a bidirectional diode thyristor)

A function, usually represented graphically, relating the thyristor voltage to the thyristor current for a specified virtual junction temperature, under conditions of internal electrical and thermal equilibrium.

NOTE The word "static" is usually omitted except when a distinction between static and dynamic characteristics is necessary.

(2) (of a unidirectional diode thyristor): A function, usually represented graphically, relating the anode voltage to the anode current for a specified virtual junction temperature, under conditions of internal electrical and thermal equilibrium.

NOTE The word "static" is usually omitted except when a distinction between static and dynamic characteristics is necessary.

References:

JESD77-B, 2/00

JESD77-B, 2/00

characterization

A description of the characteristics of a product or process by mathematical modeling, design of experiments, or statistical data evaluation.

References:

EIA-557-A, 7/95
JESD86#, 8/01

charge packet

The portion of the total charge that is transferred from one position to the next position.

References:

JESD99B, 5/07

charge pump

(1) A dc-to-dc converter in which a capacitor is charged from a voltage source and then electrically reconnected in series with that source to make available a voltage greater than that of the source.

NOTE This type of dc-to-dc converter is sometimes called a voltage doubler or, when several stages are cascaded, a voltage multiplier.

(2) A dc-to-dc converter in which a capacitor is charged from a voltage source and then electrically reconnected to make available a voltage whose polarity is opposite to that of the source.

References:

JESD99B, 5/07

charge-coupled device (CCD)

A charge-transfer device that stores charge in potential wells and transfers this charge almost completely as a packet by translating the position of the potential wells.

References:

JESD99B, 5/07

charge-coupled image sensor

A charge-coupled device in which an optical image is converted into packets of charge that can be transferred as the electrical analog of the image.

References:

JESD99B, 5/07

charge-handling capacity; full-well capacity

The maximum amount of charge that can be stored in a potential well and transferred without overflow into adjacent wells.

References:

JESD99B, 5/07

charge-regeneration stage (of a digital circuit)

A region of a charge-transfer device that is used to refresh stored digital information.

References:

JESD99B, 5/07

charge-transfer device (CTD)

A device in which operation depends on the movement of discrete packets of charge along or beneath the semiconductor surface or through the interconnections on the semiconductor surface.

References:

JESD99B, 5/07

charge-transfer efficiency (CTE) (η )

The fraction of the signal charge that is transferred from one storage region to the next storage region.

References:

JESD99B, 5/07

charge-transfer inefficiency (CTI) (ε )

The fraction of the signal charge that fails to be transferred from one storage region to the next storage region.

NOTE A synonym is "incomplete charge-transfer coefficient".

References:

JESD99B, 5/07

charge-transfer loss (δ )

The fractional loss of signal charge that occurs when a charge packet is transferred from one storage region to the next storage region and that packet is preceded by one or more packets of zero charge.

NOTE The loss of charge is that charge necessary to replenish all interface states or bulk traps that have emptied since the last passage of charge through the device. It is not charge that is left behind as it is in the case of charge-transfer inefficiency.

References:

JESD99B, 5/07

charge-transfer time (of a charge-transfer device)

The time required to move a specified fraction of a charge packet from one storage region to the next.

References:

JESD99B, 5/07

charged-device model (CDM)

A specified circuit characterizing an electrostatic discharge (ESD) event that occurs when a device acquires charge through some triboelectric (frictional) or electrostatic induction processes and then abruptly touches a grounded object or surface.

References:

JESD22-C101C, 12/04

check list

A simplified listing of the specified criteria that may be checked off during an audit or inspection.

References:

EIA-557-A, 7/95

check sheet

A form for data collection.

References:

EIA-557-A, 7/95

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