Dictionary C

(1) The n‑type region to which the forward current flows within a semiconductor diode.

NOTE    In Schottky diodes, usually the barrier metal replaces the p‑type semiconductor region and the remaining semiconductor region is n‑type; however, some Schottky diodes have been made with the barrier metal replacing the n‑type semiconductor region, in which case the remaining semiconductor region is p‑type.

(2) A circuit element to which negative bias is applied.

NOTE    For the purpose of JEP154, when the die is the cathode, the electron flow is from the die through the solder bump to the substrate.

Synonym for "reverse current".

JESD77-B, 2/00

NOTE    For unidirectional blocking or low-capacitance ABDs, any rectifier diode(s) that may be included are ignored in the determination of the cathode terminal.

The terminal connected to the n‑type region of the p‑n junction or, when two or more p‑n junctions are connected in series with the same polarity, to the extreme n‑type region.

NOTE 1 See note to "cathode".

NOTE 2 This definition does not apply to current-regulator diodes.

NOTE 3 For voltage-reference diodes, any temperature-compensating diodes that may be included shall be ignored in the determination of the anode terminal.

(2) (of a current-regulator diode): The terminal from which current flows into the external circuit when the diode is biased to operate as a current regulator.

(3) (of a unidirectional diode thyristor): The terminal from which the current flows to the external circuit when the thyristor is in the on state.

(4) (of a unidirectional triode thyristor): The main terminal from which the principal current flows to the circuit being controlled when the thyristor is in the on state.

NOTE A second cathode terminal may be provided for connecting to the control circuit of a p‑gate thyristor.

JESD77-B, 2/00
JESD282-B, 4/00

A tool for individual or group problem-solving that uses a graphic description of the various process elements to analyze potential sources of process variation. Also called a "fishbone diagram" (after its appearance) or "Ishikawa diagram" (after its developer).

JEP132, 7/98
EIA-557-A, 7/95

A package containing a cavity that is intended to be occupied by a chip.

JESD22-B103B#, 6/02
JESD22-B104C#, 11/04

See "charge-coupled device".

See "card detect".

See "charged-device model".

See "column enable".

A tool that automatically generates the physical layout to meet the specified parameters and that may generate a symbol and timing and functional models.

JESD12-1B, 8/93
JESD99B, 5/07

An integrated circuit fabricated with a unique full set of mask information and comprising one or more macrocells that can be selectively placed and interconnected to perform an electrical function.

JESD12-1B, 8/93
JESD99B, 5/07

A reference line on a control chart about which the chart points are expected to cluster in the absence of a special cause. It is usually set at the average, median, or mode of the points being plotted, or (for a tunable process) at an achievable target value (to detect deviations from the value thought most desirable).

EIA-557-A, 7/95

A functional unit that consists of one or more processors and their internal storage. (Ref. ANSI X3.172.)

JESD100-B, 12/99

A process that, through demonstration and validation, has been determined to produce product capable of consistently achieving or exceeding customer requirements.

EIA-599-A, 6/98

See "cumulative fraction failing".

An alteration to the product process; which may be major or minor: a) major change: a change that may affect the form, fit, or function of the product or adversely affect the quality or reliability of the product, or b) minor change: a change that does not affect the form, fit, function, or reliability of the product.

JESD46C, 10/06

(1) A thin semiconductor layer, between the source region and the drain region, in which the current is controlled by the gate potential.

(2) A region of semiconductor material in which current flow is influenced by a transverse electrical field.

NOTE 1 A channel may physically be an inversion layer, a diffused layer, or bulk material.

NOTE 2 The type of channel, i.e., p‑channel or n-channel, is determined by the type of majority carrier during conduction.

JESD24, 7/85

JESD99B, 5/07

A control region through which the principal current passes and in which the concentration of principal-current charge carriers is determined by voltage applied to a gate, the principal current being the result of an applied drift field.

NOTE This definition applies for the actual operating mode of the device regardless of the name of any associated terminal.

(2) (of a JFET): A control region through which the principal-current charge carriers pass and whose cross-section is determined by the voltage applied to a gate, the principal current being the result of an applied drift field.

NOTE This definition applies for the actual operating mode of the device regardless of the name of any associated terminal.

JESD77-B, 2/00

JESD77-B, 2/00