Global Standards for the Microelectronics Industry
Dictionary B
beam lead
A thick-film lead formed on and attached to the chip interconnection pattern and projecting cantilevered beyond the chip periphery for attachment to a substrate.
References:JESD99B, 5/07
behavioral description
The algorithms or equations defining a function.
References:JESD12-1B, 8/93
JESD99B, 5/07
BG
See "byte-mode enable".
References:BGA
See "ball-grid-array" and also "grid-array package".
References:bias
(1) A voltage or current applied to an electronic device to establish a reference level for operation.
(2) The difference between the mean (or expectation) of an estimator, T, and the true value, θ, of a parameter: E(T) - θ.
References:Merriam-Webster's Collegiate Dict.
JESD37, 10/92
bias charge; circulating bias charge (for analog signal applications)
A charge that defines the no-signal level.
NOTE This charge is inserted into all potential wells electrically or by radiation.
References:JESD99B, 5/07
BiCMOS
See "bipolar-and-CMOS technology".
References:BiCMOS series
A series that includes devices combining bipolar and silicon-gate complementary metal-oxide-semiconductor (CMOS) field-effect devices in a single-chip integrated circuit.
References:JESD54, 2/96
bidirectional ABD
A two-terminal ABD with a voltage-current avalanche breakdown characteristic in both directions, which can be either symmetrical or asymmetrical.NOTE Large transient currents will be clamped for voltage of either polarity across two similar p-n junctions in series connected in opposite directions. During a transient current event in this operating mode, one of the two p-n junctions is always in avalanche breakdown and the other is in the forward-conducting, low-voltage mode. The voltage across the bidirectional ABD is the sum of these two voltages. The avalanche breakdown voltage is substantially the same in both directions for a symmetrical bidirectional ABD; however, it may also be intentionally different or asymmetrical by design for special applications. Since multiple p-n junction capacitances in series reduce the overall total capacitance, the bidirectional ABD has lower capacitance than its unidirectional counterpart.
Bidirectional ABD symbol options
JESD210, 12/07
bidirectional low-capacitance ABD
A two-terminal device comprising two anti-parallel unidirectional-blocking low-capacitance ABD devices.NOTE The rectifier p-n junctions have low capacitance and must have a reverse blocking voltage greater than the avalanche breakdown voltage of the anti-parallel unidirectional ABD element.
JESD210, 12/07
bidirectional thyristor surge protective device
A thyristor surge protective device having substantially the same switching characteristics in the first and third quadrants.
References:JESD77-B, 2/00
BiFET
See "bipolar-and-FET technology".
References:big endian
The format in which the most significant bit of a word is transferred first and the least significant bit is transferred last.
References:JESD96, 4/04
BiMOS
See "bipolar-and-MOS technology".
References:binomial distribution
A specific discrete probability distribution for attributes data.
References:EIA-557-A, 7/95
bipolar output
An output having internal connections through two active devices to two supply voltages so that, according to the relative states of the active devices, the output can source or sink current through the load.
References:JESD99B, 5/07
bipolar technology
A technology for producing devices in which electrical conduction depends on the flow of both majority and minority carriers.
References:JESD77-B, 2/00
JESD99B, 5/07
