Global Standards for the Microelectronics Industry
Dictionary B
b
See "bit".
References:B
See "port A; port B".
References:B
See "byte".
References:B-mode
See "acoustic data, B-mode".
References:B; b
See "base terminal".
References:BA
See "bank address".
References:back end of line (BEOL) (noun)
The portion of the semiconductor processing line that creates the conductive lines carrying power and signals between devices and to the interface connecting off-chip. References: JEP156, 3/09back-end-of-line (BEOL) (adj)
Pertaining to the portion of the semiconductor processing line that creates the conductive lines carrying power and signals between devices and to the interface connecting off-chip. References: JEP156, 3/09back-side substrate view area
The interface between the encapsulant and the back of the substrate within the outer edges of the substrate surface. (Refer to Type IV in Annex A of J‑STD‑035.)
References:J-STD-035, 5/99
background charge
A synonym for "bias charge", used mainly in imaging devices.
References:JESD99B, 5/07
backside of flip chip die
The surface of the device opposite the face to which the solder bump interconnections are attached.
References:JESD22-B109, 6/02
backward diode
A semiconductor diode in which quantum-mechanical tunneling leads to a current-voltage characteristic with a reverse current greater than the forward current, for equal and opposite applied voltages, in some voltage range centered about the origin.
Graphic symbol (ref. IEEE Std 315):
References:JESD77-B, 2/00
balanced amplifier
An amplifier in which the quiescent dc output voltage (or, if the output is a differential output, the difference between the two quiescent dc output voltages) has been reduced to zero or other specified level.
References:JESD99B, 5/07
ball bond
See "bond, ball".
References:ball grid array (BGA)
A package in which the external connections to the package are made via a rectangular array of ball-type connections, all on a common plane.
NOTE See also "grid array package".
References:JESD21-C, 1/97
JESD22-B112, 5/05
bandwidth (B or BW)
The range of frequencies within which the gain of the amplifier is not more than 3 dB below the value of the midband gain.
NOTE Midband gain is the gain at a specified frequency or the average gain over a specified frequency range.
References:JESD99B, 5/07
bandwidth, maximum output swing (BOM)
The range of frequencies within which the maximum output voltage swing is above the specified value at a specified load impedance.
References:JESD99B, 5/07
bandwidth, unity gain
The range of frequencies within which the open-loop amplification is greater than unity.
References:JESD99B, 5/07
bank address (BA)
In a RAM that has multiple banks in its architecture, the address used to select any one of the available banks.
References:JESD21-C, 1/97
bar code label
A label that gives information in a code consisting of parallel bars and spaces, each of various specific widths.
References:JESD97, 5/04
J-STD-033B#, 10/05