Dictionary A

The peak current reached during device avalanche in a single-pulse unclamped inductive-load switching circuit.

JESD24-5#, 8/90

The time duration of device avalanche.

JESD24-5, 8/90
JESD24-8, 8/92

The energy sustained by a device in avalanche per repetitive pulse in an inductive-load switching circuit.

JESD24-8#, 8/92

A light-emitting diode that emits luminous energy when a controlled reverse current in the breakdown region is applied.

JESD77-B, 2/00

The effective (constant) device drain-source breakdown voltage during avalanche. The instantaneous device breakdown voltage will change with junction temperature during a test. V_DSX(sus) can be calculated from a measurement of the avalanche duration, t_av.

JESD24-5, 8/90

A transient voltage suppressor that is a semiconductor diode with a single p‑n junction (or with multiple p‑n junctions none of which interact) and employs its breakdown characteristics as part of its function.

JESD77-B, 2/00

The sum of the sample values divided by the number of sample values. A measure of location used to estimate the population mean.

EIA-557-A, 7/95

The n^th root of overall charge-transfer efficiency, where n is the number of transfers.

JESD99B, 5/07

The value of a periodic current averaged over a full cycle unless otherwise specified.

JESD77-B, 2/00
JESD282-B, 4/00

The average dark current per unit area within the active area of the device.

NOTE Depending on the type of device, the active area may be defined as either the area of transfer channel or the overall area including channel-defining regions. Other names used are "average leakage current density" and "average thermal generation current density".

JESD99B, 5/07

The average value of the virtual junction temperature of a given semiconductor device over an operating cycle.

RS-323, 3/66

The ratio of (1) the total output noise power within an output frequency band when the noise temperature of all input terminations is at the reference noise temperature, T₀, at all frequencies that contribute to the output noise to (2) that part of (1) caused by the noise of the signal-input termination within the signal-input frequency band. (Ref. IEC 747‑1.)

NOTE 1 The abbreviation is often used in place of symbol ; however, symbol is preferred.

NOTE 2 This ratio may be expressed logarithmically in decibels (dB).

JESD77-B, 2/00
JESD99B, 5/07
RS-311-A, 11/81

The average lot fraction nonconforming, in parts per million, from a series of lots.

JESD16-A, 4/95

See "pulse duration, average".

The output current averaged over a full cycle from a rectifier with a 50‑Hz or 60‑Hz sinewave input and a 180^o conduction angle.

JESD77-B, 2/00
JESD282-B, 4/00

The average temperature rise in the test line, ΔT, divided by power input, ΔP, as a result of passing current through the force terminals of the structure:

θ = ΔT/ΔP.

After convergence to target stress temperature, this parameter is optionally used in the feedback algorithm.

JESD61, 4/97

The value of a periodic voltage averaged over a full cycle unless otherwise specified.

JESD77-B, 2/00
JESD282-B, 4/00

See "auto-load write transfer".

The direction from the source of radiant energy, relative to the optical axis, in which the measurement of radiometric and/or spectroradiometric characteristics is performed.

JESD77-B, 2/00