Wide Bandgap Power Semiconductors: GaN, SiC News

JEDEC Wide Bandgap Power Semiconductor Committee Publishes a Milestone Document for Bias Temperature Instability of Silicon Carbide (SiC) MOS Devices	Apr 2021
JEDEC Wide Bandgap Power Semiconductor Committee Publishes its First Guideline for Silicon Carbide (SiC) Based Power Conversion Devices	Feb 2021
JEDEC Wide Bandgap Power Semiconductor Committee Publishes New Test Method for Continuous-Switching Evaluation of GaN Power Conversion Devices	Jan 2021
JEDEC Wide Bandgap Power Semiconductor Committee Publishes Guideline for Switching Reliability Evaluation Procedures for GaN Devices	Feb 2020
JEDEC Wide Bandgap Power Semiconductor Committee Publishes its First Document: Test Method for Dynamic Resistance of GaN HEMT	Feb 2019
New JEDEC Committee for Wide Bandgap Power Semiconductors Invites Industry Participation	Dec 2017

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