Recently Published Documents

This publication defines a QGS, TOT, QGD and QGS, TH which can be extracted from a measured QG waveform for SiC MOSFETs.

This test is conducted to determine the robustness of a device to sudden exposure to extreme changes in temperature and to the effect of alternate exposures to these extremes.

The purpose of this standard is to identify the classification level of non-hermetic SMDs that are sensitive to moisture-induced stress so that they can be properly packaged, stored, and handled to avoid damage during assembly solder reflow attachment and/or repair operations.

This standard describes a baseline set of acceptance tests for use in qualifying electronic components as new products, a product family, or as products in a process which is being changed.

This document is intended to be used in conjunction with the JESD51-50 series of standards, especially with JESD51-51 (Implementation of the Electrical Test Method for the Measurement of Real Thermal Resistance and Impedance of Light-emitting Diodes with Exposed Cooling Surface) document. This present document focuses on the measurement of the total radiant flux of LEDs in combination with the measurement of LEDs's thermal characteristics: guidelines on the implementation of the recommendations of the CIE 127-2007 document are provided.

This test method provides a means for determining the strength and failure mode of a wire bonded to, and the corresponding interconnects on, a die or package bonding surface and may be performed on pre-encapsulation or post-encapsulation devices. 

This standard is invoked when a supplier becomes aware that a product’s environmental compliance declaration they provided or made available to their customers had an error that might cause a customer to draw an incorrect conclusion about the compliance of the product to legal requirements.

The purpose of this document is to specify, how LEDs thermal metrics and other thermally-related data are best identified by physical measurements using well established testing procedures defined for thermal testing of packaged semiconductor devices (published and maintained by JEDEC) and defined for characterization of light sources (published and maintained by CIE – the International Commission on Illumination).

This standard provides a comprehensive definition of the NOR cryptographic security hardware abstraction layer (HAL). It also provides design guidelines and reference software to reduce design-in overhead and facilitate the second sourcing of secure memory devices. It does not attempt to standardize any other interaction to the NOR device that is not related to cryptographic security functionality within the device.

This standard defines the form, fit and function of DDR5 connectors for U/R/LR modules supporting channels with transfer rates up to 6.4 GT/S. It contains mechanical, electrical and reliability requirements for connector mated to a module with nominal thickness of 1.27 mm. The intent of this document is to provide Performance Standards to enable connector, system designers and manufacturers to build, qualify and use the DDR5 connectors in client and server platforms. Item 11.14-213S

This white paper presents the recent knowledge of system ESD field events and air discharge testing methods. Testing experience with the IEC 61000-4-2 (2008) and the ISO 10605 ESD standards has shown a range of differing interpretations of the test method and its scope. This often results in misapplication of the test method and a high test result uncertainty. This white paper aims to explain the problems observed and to suggest improvements to the ESD test standard and to enable a correlation with a SEED IC/PCB co-design methodology.

This standard defines the specification of interface parameters, signaling protocols, and features for PMIC devices used for memory module applications. The designation PMIC5100 refers to the device specified by this document. The purpose is to provide a standard for the PMIC5100 device for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. Item 336.01C

This test method is offered as a standardized procedure to determine the total dose limit of DRAMs by measuring its refresh time tRef degradation after the device is irradiated with an X-Ray dose. This test method is applicable to any packaged device that contains a DRAM die or any embedded DRAM structure. Some indirect test methods such as wafer level characterization of total dose induced changes in leakage of access transistors are not described in this standard but are permissible as long as a good correlation is established.

This standard defines the assumptions for the system management bus for next generation memory solutions; covering the interface protocol, use of hub devices, and voltages appropriate to these usages. Item 2260.56A.

Item: 11.4-996E

Designator: SBGA-M7775[23828]_D0p073...

Item: 11.4-996

Access STP Files for MO-349A

Cross Reference: DR4.26

Item 11-993

Designator: PBGA-B#[#]_I0p73...

Item 11.10-460

Designator: PMFM K#_I...

This standard defines the DDR5 SDRAM Specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this Standard is to define the minimum set of requirements for JEDEC compliant 8 Gb through 32 Gb for x4, x8, and x16 DDR5 SDRAM devices. This standard was created based on the DDR4 standards (JESD79-4) and some aspects of the DDR, DDR2, DDR3, and LPDDR4 standards (JESD79, JESD79-2, JESD79-3, and JESD209-4). Item 1848.99M.

This document replaces all past versions, however JESD220E, January 2020 (V 3.1), is available for reference only. This standard specifies the characteristics of the UFS electrical interface and the memory device. Such characteristics include (among others) low power consumption, high data throughput, low electromagnetic interference and optimization for mass memory subsystem efficiency. The UFS electrical interface is based on an advanced differential interface by MIPI M-PHY specification which together with the MIPI UniPro specification forms the interconnect of the UFS interface.

This publication examines the LTS requirements of wafers, dice, and packaged solid-state devices. The user should evaluate and choose the best practices to ensure their product will maintain as-received device integrity and minimize age- and storage-related degradation effects.

This annex JESD308-U0-RCA, DDR5 Unbuffered Dual Inline Memory Module (UDIMM) Raw Card A

Annex defines the design detail of x8, 1 Package Rank DDR5 UDIMM. The common feature of DDR5 UDIMM such as the connector pinout can be found in the JESD308, DDR5 Unbuffered Dual Inline Memory Module (UDIMM) Common Standard. Item 2265.13A

This annex JESD308-U4-RCE, DDR5 Unbuffered Dual Inline Memory Module (UDIMM) with 4-bit ECC (EC4 SODIMM) Raw Card E Annex" defines the design detail of x8, 2 Package Ranks DDR5 ECC UDIMM. The common feature of DDR5 UDIMM such as the connector pinout can be found in the JESD308, DDR5 Unbuffered Dual Inline Memory Module (UDIMM) Common Standard. Item 2265.12A

This annex JESD308-U0-RCC, “DDR5 Unbuffered Dual Inline Memory Module (UDIMM) Raw Card C Annex” defines the design detail of x16, 1 Package Ranks DDR5 UDIMM. The common feature of DDR5 UDIMM such as the connector pinout can be found in the JESD308, DDR5 Unbuffered Dual Inline Memory Module (UDIMM) Common Standard. Item 2265.08A

Editorial, Terminology Update. This standard defines the dc and ac single-ended (data) and differential (clock) operating conditions, I/O impedance's, and the termination and calibration scheme for 1.35 V Pseudo Open Drain I/Os. The 1.35 V Pseudo Open Drain interface, also known as POD135, is primarily used to communicate with GDDR5 or GDDR5M SGRAM devices. Item 146.01B