Recently Published Documents

Terminology update.   

This legacy document is a comprehensive users’ guide for silicon rectifier diode applications.

Designator: PBGA-B#[#]_I0p...

Item: 11.11-988, Access STP Files for MO-210R

Cross Reference: DG4.5

https://www.jedec.org/filebrowser/download/1625

This standard establishes the requirements for exchanging part data between part manufacturers and their customers for electrical and electronic products. This standard applies to all forms of electronic parts. It forms part of the Part Model XML Schema, which covers the parental structure for the electrical, physical, thermal, assembly process classification data along with materials and substances that may be present in the supplied product or subproducts.  This Guideline specifically focuses on the “Assembly Process Classification” subsection of the Part Model.

For more information visit the main JEP30 webpage.

This standard establishes the requirements for exchanging part data between part manufacturers and their customers for electrical and electronic products. This standard applies to all forms of electronic parts. It forms part of the Part Model XML Schema, which covers the parental structure for the electrical, physical, supply chain, assembly process classification data along with materials and substances that may be present in the supplied product or sub-products. This Guideline specifically focuses on the SupplyChain sub-section of the Part Model.

For more information visit the main JEP30 webpage.

This standard defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the DDR5 Registering Clock Driver (RCD) with parity for driving address and control nets on DDR5 RDIMM and LRDIMM applications. The DDR5RCD03 Device ID is DID = 0x0053.

This document establishes guidelines for integrated circuit unit container and the next level (intermediate) container packing and labeling. The guidelines include tube/rail standardization, intermediate packing, date codes, tube labeling, intermediate container and shipping labels, and standardize tube quantities. Future revisions of this document will also include tray and reel guidelines. The objective of this publication is to promote the standardization of practices between manufacturers and distributors resulting in improved efficiency, profitability, and product quality.

This document provides guidelines for evaluating gate reliability and lifetime testing for silicon carbide (SiC) based power devices with a gate oxide or gate dielectric.

Terminology update.
This standard defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the SSTU32S869 and SSTU32D869 registered buffer with parity for driving heavy load on high-density DDR2 RDIMM applications. A typical application would be a 36 SDRAM planar DIMM.

Terminology update. 
This standard includes four chapters of the FBD Channel Specification (cover) Channel Overview (Chapter 2), Initialization (Chapter 3), Channel Protocol (Chapter 4), and Reliability, Availability, and Serviceability (RAS) (Chapter 5).

Terminology update.

This standard defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the SSTU32864 configurable registered buffer for DDR2 RDIMM applications.

Terminology update.
This standard defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the SSTE32882 registered buffer with parity for driving address and control nets on DDR3/DDR3L/DDR3U RDIMM applications.

The purpose is to provide a standard for the SSTE32882 (see Note) logic device, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use.

 Terminology update.

This standard defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the SSTUB32865 registered buffer with parity for 2 rank by 4 or similar high density DDR2 RDIMM applications. The SSTUB32865 is identical in functionality to the SSTU32865 but specifies tighter timing characteristics and a higher application frequency of up to 410 MHz.

Terminology update.
This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTUB32866 registered buffer with parity test for DDR2 RDIMM applications.

Terminology update.  
This standard defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the SSTUB32868 registered buffer with parity test for DDR2 RDIMM applications. The purpose is to provide a standard for the SSTUB32868 (see Note) logic device, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use.

Terminology update.  
This standard defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the SSTUA32S869 and SSTUA32D869 registered buffer with parity for driving heavy load on high-density DDR2 RDIMM applications. A typical application would be a 36 SDRAM planar DIMM. The SSTUA32S869 and SSTUA32D869 are identical in functionality to the SSTU32S869 and SSTU32D869 devices respectively but specify tighter timing characteristics and a higher application frequency of up to 410MHz.

This document is a core specification for a Fully Buffered DIMM (FBD) memory system. This document, along with the other core specifications, must be treated as a whole. Information critical to a Advanced Memory Buffer design appears in the other specifications, with specific cross-references provided.

This publication describes the guidelines for VT measurement methods and conditioning prior to VT testing in SiC power MOSFETs to reduce or eliminate the effect of the aforementioned hysteresis.

This publication is a guideline to assist manufacturers of integrated circuits in defining conditions for burn-in and life test of their products to meet quality and reliability performance requirements of MIL-PRF-38535.

This is a re-publication of a white paper which reports on a survey that has been conducted to better understand how the latch-up standard JESD78 revision E (JESD78E) is interpreted and has been used in the industry.

The mission of JEDEC is to serve the solid state industry by creating, publishing, and promoting global acceptance of standards, and by providing a forum for technical exchange on leading industry topics. This manual provides guidance for JEDEC members and staff to perform their functions correctly in the standardization process.

NOTE   The .pdf file has been updated as of  1/12/2023, there was an side comment in 7.2 that was included at time of conversion and has been removed.

This standard covers the I-test and Vsupply overvoltage latch-up testing of integrated circuits. The purpose of this standard is to establish a method for determining IC latch-up characteristics and to define latch-up detection criteria. Latch-up characteristics are extremely important in determining product reliability and minimizing No Trouble Found (NTF) and Electrical Overstress (EOS) failures due to latch-up. This test method is applicable to NMOS, CMOS, bipolar, and all variations and combinations of these technologies. 

This standard has been adopted by the Defense Logistics Agency (DLA) as project 5962-1880.

This guideline provides a methodology to characterize a new or existing process and is applicable to any manufacturing or service process. It describes when to use specific tools such as failure mode effects analysis (FEMA), design or experiments (DOE), measurement system evaluation (MSE), capability analysis (CpK), statistical process control (SPC), and problem solving tools. It also provides a brief description of each tool.

This standard describes SPI bus transactions intended to support Secure Flash operation on a serial memory device. The on-chip SFDP database described in JESD216 has been revised to include details about the secure transactions. This ballot does not describe the SFDP revisions or the secure packet structure.

This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the devices’ operating condition in an accelerated way, and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as burn-in, may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this document.