Recently Published Documents

This document defines a standard NAND flash device interface interoperability standard that provides means for a system to be designed that can support Asynchronous SDR, Synchronous DDR and Toggle DDR NAND flash devices that are interoperable between JEDEC and ONFI member implementations. This standard was jointly developed by JEDEC and the Open NAND Flash Interface Workgroup, hereafter referred to as ONFI. Item 1767.57

The manufacturers identification code is defined by one or more 8 bit fields, each consisting of 7 data bits plus 1 odd parity bit. The manufacturers identification code is assigned, maintained and updated by the JEDEC Office. The intent of this identification code is that it may be used whenever a digital field is required, e.g., hardware, software, documentation, etc. To make a request for an ID Code please go to http://www.jedec.org/Home/MIDCODE_request.cfm

Designator: PSXC-L6_I1p2-R11p6x5p85Z2p07-R0p3x0p6ET0p07
Item: 11.14-198, Access STP Files for SO-028A
Cross Reference: N/A

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTUB32868 registered buffer with parity test for DDR2 RDIMM applications. SSTU32S2868 denotes a single-die implementation and SSTU32D868 denotes a dual-die implementation. This is a minor editorial revision as shown in Annex A of the document.

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTV16859 13-bit to 26-bit SSTL_2 registered buffer for stacked DDR DIMM applications. The purpose is to provide a standard for the SSTV16859 logic device, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. This is a minor editorial revision, shown in Annex A of the document.

This test is used to determine the terrestrial cosmic ray Soft Error Rate (SER) sensitivity of solid state volatile memory arrays and bistable logic elements (e.g., flip-flops) by measuring the error rate while the device is irradiated in a neutron or proton beam of known flux. The results of this accelerated test can be used to estimate the terrestrial cosmic ray induced SER for a given terrestrial cosmic ray radiation environment. This test cannot be used to project alpha-particle induced SER.

This specification defines the standard requirements and procedures for terrestrial soft-error-rate (SER) testing of integrated circuits and reporting of results. Both real-time (unaccelerated) and accelerated testing procedures are described. At terrestrial, Earth-based altitudes, the predominant sources of radiation include both cosmic-ray radiation and alpha-particle radiation from radioisotopic impurities in the package and chip materials. An overall assessment of a deviceís SER is complete, only when an unaccelerated test is done, or accelerated SER data for the alpha-particle component and the cosmic-radiation component has been obtained.

This standard is intended for use by SoC, ASIC, ASSP, and FPGA developers or vendors interested in incorporating a master interface having a low signal count and high data transfer bandwidth with access to multiple sources of slave devices compliant with the interface. It is also, intended for use by peripheral developers or vendors interested in providing slave devices compliant with the standard, including non-volatile memories, volatile memories, graphics peripherals, networking peripherals, FPGAs, sensors, etc. Item 1775.64.

This document specifies the enclosure form factor which can be used with various type of SSD devices: outline of the top and bottom enclosure, three screw holes to mount the enclosure on the system, and two clamping holes in the top enclosure to lock to the connector. Item 318.06. This is a minor editorial revision detailed in Annex D.

This publication defines the requirements for Copy-Exact Process (CEP) matching, real-time process control, monitoring, and ongoing assessment of the CEP. The critical element requirements for inputs, process controls, procedures, process indicators, human factors, equipment/infrastructure and matching outputs are given. Manufacturers, suppliers and their customers may use these methods to define requirements for process transfer within the constraints of their business agreements.

This test is used to determine the Soft Error Rate (SER) of solid state volatile memory arrays and bistable logic elements (e.g. flip-flops) for errors which require no more than re-reading or re-writing to correct and as used in terrestrial environments. It simulates the operating condition of the device and is used for qualification, characterization, or reliability monitoring. This test is intended for execution in ambient conditions without the artificial introduction of radiation sources.

This standard establishes methods for calculating failure rates in units of FITs by using data in varying degrees of detail such that results can be obtained from almost any data set. The objective is to provide a reference to the way failure rates are calculated.

Designator: PDSO_N#[#]_I#-R#x#Z#-CturET0p04 
Item: 11.11-994, Access STP Files for MO-340B
Cross Reference: DR4.8, DR4.16, DR4.20

This document defines the LPDDR5 standard, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a JEDEC compliant x16 one channel SDRAM device and x8 one channel SDRAM device. LPDDR5 device density ranges from 2 Gb through 32 Gb. This document was created using aspects of the following standards: DDR2 (JESD79-2), DDR3 (JESD79-3), DDR4 (JESD79-4), LPDDR (JESD209), LPDDR2 (JESD209-2), LPDDR3 (JESD209-3) and LPDDR4 (JESD209-4). Item  1854.99B.

The Unbiased HAST is performed for the purpose of evaluating the reliability of nonhermetic packaged solid-state devices in humid environments. It is a highly accelerated test which employs temperature and humidity under noncondensing conditions to accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors that pass through it. Bias is not applied in this test to ensure the failure mechanisms potentially overshadowed by bias can be uncovered (e.g., galvanic corrosion). This test is used to identify failure mechanisms internal to the package and is destructive.

This document provides the requirements for an additional block called as Replay Protection Monotonic Counter. (RPMC) Replay Protection provides a building block towards providing additional security. This block requires modifications in both a Serial Flash device and Serial Flash Controller. The standard defines new commands for Replay Protected Monotonic Counter operations. A device that supports RPMC can support these new commands as defined in this standard.

This document defines the JC-42.6 Manufacturer ID. This document covers Manufacturer ID Codes for the following technologies: LPDDR (JESD209), LPDDR2 (JESD209-2), LPDDR3 (JESD209-3), LPDDR4 (JESD209-4), Wide-IO (JESD229), and Wide-IO2 (JESD229-2). The purpose of this document is to define the Manufacturer ID for these devices. Item No. 1725.03C. See Annex for additions/changes. To make a request for an ID code: https://www.jedec.org/id-codes-low-power-memories

This document is intended to guide device manufacturers in developing datasheets and to device customers in understanding datasheet entries.

The scope of this document covers SiC-based PECS devices having a gate dielectric region biased to turn devices on and off. This typically refers to MOS devices such as MOSFETs and IGBTs. In this document, only NMOS devices are discussed as these are dominant for power device applications; however, the procedures apply to PMOS devices as well.

Designator: PBMA-N32[39]_Ip0-R14p1x18p1Z1p65-R0p71x1p1 
Item: 11.11-987, Access STP Files for MO-347A
Cross Reference: N/A

RAM process node transistor scaling for power and DRAM capacity has made DRAM cells more sensitive to disturbances or transient faults. This sensitivity becomes much worse if external stresses are applied in a meticulously manipulated sequence, such as Rowhammer. Rowhammer related papers have been written outside of JEDEC, but some assumptions used in those papers didn’t explain the problem very clearly or correctly, so the perception for this matter is not precisely understood within the industry. This publication defines the problem and recommends following mitigations to address such concerns across the DRAM industry or academia. Item 1866.01.

The HBM DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM DRAM uses a wide-interface architecture to achieve high-speed, low-power operation. The HBM DRAM uses differential clock CK_t/CK_c. Commands are registered at the rising edge of CK_t, CK_c. Each channel interface maintains a 128b data bus operating at DDR data rates. Also available for designer ease of use is HBM Ballout Spreadsheet (Note this version is the latest version for use with JESD235D). Committee item 1797.99L.

This addendum defines LPDDR4X specifications that supersede the LPDDR4 Standard (JESD209-4) to enable low VDDQ operation of LPDDR4X devices to reduce power consumption. Item 1831.55A.