Recently Published Documents

This document replaces all past versions, however JESD220D, January (V 3.0), is available for reference only.The purpose of this standard is definition of an UFS Universal Flash Storage electrical interface and an UFS memory device. This standard defines a unique UFS feature set and includes the feature set of e·MMC Specification as a subset. This standard references also several other standard specifications by MIPI (M-PHY and UniPro Specifications) and INCITS T10 (SBC, SPC and SAM Standards) organizations.  For more information about how to access and download the MIPI specifications related to UFS, visit: https://www.mipi.org/mipi-jedec/DocumentRequestWelcome. Item 135.99

Designator: PDSO_N#[#]_I#-R#x#Z#-CturET0p04
Item: 11.11-974, Access STP Files for MO-340A
Cross Reference: DR4.8, DR4.16, DR4.20

The manufacturers identification code is defined by one or more 8 bit fields, each consisting of 7 data bits plus 1 odd parity bit. The manufacturers identification code is assigned, maintained and updated by the JEDEC Office. The intent of this identification code is that it may be used whenever a digital field is required, e.g., hardware, software, documentation, etc. To make a request for an ID Code please go to http://www.jedec.org/Home/MIDCODE_request.cfm

Item 11-11.975, STP File for MO-339A

This standard establishes requirements for the generation of electronic-device package designators for the JEDEC Solid State Technology Association. The requirements herein are intended to ensure that such designators are presented in as uniform a manner as practicable. Item 11.2-962.

This document defines the electrical and mechanical requirements for 260 pin, 1.2 V (VDD), Small Outline, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM SODIMMs). These DDR4 SODIMMs are intended for use as main memory when installed in PCs, laptops and other systems. This document also contains the DDR4 DIMM Label, Ranks Definition. Item 2224.13A

This annex describes the serial presence detect (SPD) values for all DDR4 modules covered in Document Release 5. Differences between module types are encapsulated in subsections of this annex. These presence detect values are those referenced in the SPD standard document for ‘Specific Features’. Item 2276.05.

This section covers DDR4 and DDR4E in both DRAM-only module types and Hybrid module types, as well as pre-production modules of both types. Item 2224.13A

This document defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the DDR4 Registering Clock Driver (RCD) with parity for driving address and control nets on DDR4 RDIMM and LRDIMM applications. Any TBDs as of this document, are under discussion by the formulating committee. Item 314.08F.

*If you downloaded this file between 8/7/2019 and 8/14/2019, please download again, the publication date on the document was incorrected and has been fixed.

The purpose of this document is to provide a design guideline for thermal test chips used for integrated circuit (IC) and transistor package thermal characterization and investigations. The intent of this guideline is to minimize the differences in data gathered due to nonstandard test chips and to provide a well-defined reference for thermal investigations.

This standard defines the dc and ac single-ended (data) and differential (clock) operating conditions, I/O impedance's, and the termination and calibration scheme for 1.35 V Pseudo Open Drain I/Os. The 1.35 V Pseudo Open Drain interface, also known as POD135, is primarily used to communicate with GDDR5 or GDDR5M SGRAM devices. Item 146.01B

This standard defines the DC and AC single-ended (data) and differential (clock) operating conditions, I/O impedances, and the termination and calibration scheme for 1.25 V Pseudo  Open Drain I/Os. The 1.25 V Pseudo Open Drain interface, also known as POD125, is primarily used to communicate with GDDR6 SGRAM devices.

This specification defines the electrical and mechanical requirements for 288-pin, 1.2 Volt (VDD), Registered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM RDIMMs). These DDR4 Registered DIMMs (RDIMMs) are intended for use as main memory when installed in PCs. Item 2149.05E

This specification defines the electrical and mechanical requirements for Raw Card K, 260-pin, 1.2 Volt (VDD), Small Outline, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM SODIMMs). These DDR4 SODIMMs are intended for use as main memory when installed in PCs, laptops, and other systems. Item 2228.59A Editorial.

Item 14-192

This document defines the electrical and mechanical requirements for Raw Card B, 288-pin, 1.2 Volt (VDD), Registered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM RDIMMs). These DDR4 Registered DIMMs (RDIMMs) are intended for use as main memory when installed in PCs. Item 2149.50.

This specification defines the electrical and mechanical requirements for Raw Card E, 288-pin, 1.2 Volt (VDD), Registered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM RDIMMs). These DDR4 Registered DIMMs (RDIMMs) are intended for use as main memory when installed in PCs. Item 2149.46

This document has been replaced by JESD209-5A, however remains on the JEDEC Website for reference use only.

This document is intended for use in the GaN power semiconductor and related power electronic industries, and provides guidelines for measuring the dynamic ON-resistance of GaN power devices.

This document provides a comprehensive definition of the e•MMC Electrical Interface, its environment, and handling. It also provides design guidelines and defines a tool box of macro functions and algorithms intended to reduce design-in overhead. The purpose of this standard is the definition of the e•MMC Electrical Interface, its environment and handling. It provides guidelines for systems designers. Item 67.14.

This document replaces all past versions, however links to the replaced versions are provided here for reference only: JESD84-B51, February 2015; JESD84-B50.1, July 2014 (Editorial revision of JESD84-B50); JESD84-B50, September 2013 (Revision of JESD84-B451); JESD84-B451, June 2012 (Revision of JESD84-B45, June 2011)

Item 11.10-457

These guidelines apply to GaAs Monolithic Microwave Integrated Circuits (MMICs) and their individual component building blocks, such as GaAs Metal-Semiconductor Field Effect Transistors (MESFETs), Pseudomorphic High Electron Mobility Transistors (PHEMTs), Heterojunction Bipolar Transistors (HBTs), resistors, and capacitors.  While the procedure described in this document may be applied to other semiconductor technologies, especially those used in RF and microwave frequency analog applications, it is primarily intended for technologies based on GaAs and related III-V material systems (InP, AlGaAs, InGaAs, InGaP, GaN, etc). 

This section covers DDR2 DIMM labels.

The HBM DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM DRAM uses a wide-interface architecture to achieve high-speed, low-power operation. The HBM DRAM uses differential clock CK_t/CK_c. Commands are registered at the rising edge of CK_t, CK_c. Each channel interface maintains a 128b data bus operating at DDR data rates. Also available for designer ease of use is HBM Ballout Spreadsheet.

Item 1797.99J.