Recently Published Documents

This Test Method establishes an industry standard preconditioning flow for nonhermetic solid state SMDs (surface mount devices) that is representative of a typical industry multiple solder reflow operation. These SMDs should be subjected to the appropriate preconditioning sequence of this document by the semiconductor manufacturer prior to being submitted to specific in-house reliability testing (qualification and reliability monitoring) to evaluate long term reliability (which might be impacted by solder reflow).

Designator: PDSO-N2-I#-R#x#Z#-CturET0p04
Item: 11.11-970, Access STP File for MO-343A
Cross Reference: DG4.20

Designator: PBGA-B#[#]_I0p80...
Item: 11.11-971, Access STP Files for MO-210P
Cross Reference: DG4.5

This document is intended for use by GaN product suppliers and related power electronic industries. It provides guidelines for evaluating the switching reliability of GaN power switches and assuring their reliable use in power conversion applications. It is applicable to planar enhancement-mode, depletion-mode, GaN integrated power solutions and cascode GaN power switches.

Designator: PBGA-B#[#]_I0p75...
Item: 11.11-979, Access STP File for MO-328B
Cross Reference: DR4.5

This standard establishes the requirements for timely notification to affected customers after a disaster has occurred at a supplier’s facility that will affect the committed delivery of product. This standard puts specific emphasis on notification, timing, and notification content which includes risk exposure, impact analysis, and recovery plans. This standard is applicable to suppliers of, and affected customers for, solid-state products and the constituent components used within.

This document defines the LPDDR4 standard, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this standard is to define the minimum set of requirements for a JEDEC compliant 16 bit per channel SDRAM device with either one or two channels. LPDDR4 dual channel device density ranges from 4 Gb through 32 Gb and single channel density ranges from 2 Gb through 16 Gb. This document was created using aspects of the following standards: DDR2 (JESD79-2), DDR3 (JESD79-3), DDR4 (JESD79-4), LPDDR (JESD209), LPDDR2 (JESD209-2) and LPDDR3 (JESD209-3). Committee Item: 1847.22

This document defines the DDR4 SDRAM specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this Standard is to define the minimum set of requirements for JEDEC compliant 2 Gb through 16 Gb for x4, x8, and x16 DDR4 SDRAM devices. This standard was created based on the DDR3 standard (JESD79-3) and some aspects of the DDR and DDR2 standards (JESD79, JESD79-2). Committee Item 1716.78F

The power and temperature cycling test is performed to determine the ability of a device to withstand alternate exposures at high and low temperature extremes and simultaneously the operating biases are periodically applied and removed. It is intended to simulate worst case conditions encountered in application environments. The power and temperature cycling test is considered destructive and is only intended for device qualification. This test method applies to semiconductor devices that are subjected to temperature excursions and required to power on and off during all temperatures.

This document replaces all past versions, however JESD220D, January (V 3.0), is available for reference only.The purpose of this standard is definition of an UFS Universal Flash Storage electrical interface and an UFS memory device. This standard defines a unique UFS feature set and includes the feature set of e·MMC Specification as a subset. This standard references also several other standard specifications by MIPI (M-PHY and UniPro Specifications) and INCITS T10 (SBC, SPC and SAM Standards) organizations.  For more information about how to access and download the MIPI specifications related to UFS, visit: https://www.mipi.org/mipi-jedec/DocumentRequestWelcome. Item 135.99

This document defines the electrical and mechanical requirements for Raw Card A, 288-pin, 1.2 Volt (VDD), Unbuffered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM UDIMMs). These DDR4 Unbuffered DIMMs (UDIMMs) are intended for use as main memory when installed in PCs. Committee Item 2231.38(E).

This table briefly describes the changes made to this standard, JESD21-C, Release 29, compared to its predecessor, JESD21C, Release 28.

Designator: PDXC-PP2-I8p9-R107p6xp15Z26p0-DD2p95x1p1 
Item: 11.14-194, Access STP Files for SO-025A
Cross Reference: TBD

Designator: PDSO_N#[#]_I#-R#x#Z#-CturET0p04
Item: 11.11-974, Access STP Files for MO-340A
Cross Reference: DR4.8, DR4.16, DR4.20

JEP162A, while establishing the complex nature of System Level ESD, proposes that an efficient ESD design can only be achieved when the interaction of the various components under ESD conditions are analyzed at the system level. This objective requires an appropriate characterization of the components and a methodology to assess the entire system using simulation data. This is applicable to system failures of different categories (such as hard, soft, and electromagnetic interference (EMI)). This type of systematic approach is long overdue and represents an advanced design approach which replaces the misconception, as discussed in detail in JEP161, that a system will be sufficiently robust if all components exceed a certain ESD level.

Item 11.11-973, Access STP Files for MO-338A

This annex describes the serial presence detect (SPD) values for all DDR4 modules covered in Document Release 5. Differences between module types are encapsulated in subsections of this annex. These presence detect values are those referenced in the SPD standard document for ‘Specific Features’. Item 2276.05.

This document defines the electrical and mechanical requirements for 260 pin, 1.2 V (VDD), Small Outline, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM SODIMMs). These DDR4 SODIMMs are intended for use as main memory when installed in PCs, laptops and other systems. This document also contains the DDR4 DIMM Label, Ranks Definition. Item 2224.13A

The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables can be interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple vendors. Any company may request a Function Specific ID by making a request to the JEDEC office at juliec@jedec.org. Please include “Function Specific ID Request, JESD216” in the email subject line. Item 1775.15 and 1775.18.

This standard defines standard specifications for features and functionality, DC and AC interface parameters and test loading for definition of the DDR4 data buffer for driving DQ and DQS nets on DDR4 LRDIMM applications. Any TBDs as of this document, are under discussion by formulating committee. Item 314.11D

*If you downloaded this file between 8/7/2019 and 8/14/2019, please download again, the publication date on the document was incorrected and has been fixed.

Item 11.14-196

This standard defines power supply voltage range, dc interface, switching parameter and overshoot/undershoot for high speed low voltage swing terminated NMOS driver family digital circuits. The specifications in this standard represent a minimum set of interface specifications for low voltage terminated circuits. Item 159.03

Device and Subassembly Mechanical Shock Test Method is intended to evaluate devices in the free state and assembled to printed wiring boards for use in electrical equipment. The method is intended to determine the compatibility of devices and subassemblies to withstand moderately severe shocks. The use of subassemblies is a means to test devices in usage conditions as assembled to printed wiring boards. Mechanical Shock due to suddenly applied forces, or abrupt change in motion produced by handling, transportation or field operation may disturb operating characteristics, particularly if the shock pulses are repetitive. This is a destructive test intended for device qualification.This document also replaces JESD22-B104.

This document defines a standard NAND flash device interface interoperability standard that provides means for a system to be designed that can support Asynchronous SDR, Synchronous DDR and Toggle DDR NAND flash devices that are interoperable between JEDEC and ONFI member implementations. This standard was jointly developed by JEDEC and the Open NAND Flash Interface Workgroup, hereafter referred to as ONFI. Item 1765.00