Recently Published Documents

This document specifies standard temperature ranges that may be used, by way of referencing JESD402-1, in other standards, specifications, and datasheets when defining temperature related specifications. Item 1855.01A

The manufacturers identification code is defined by one or more 8 bit fields, each consisting of 7 data bits plus 1 odd parity bit. The manufacturers identification code is assigned, maintained and updated by the JEDEC Office. The intent of this identification code is that it may be used whenever a digital field is required, e.g., hardware, software, documentation, etc. To make a request for an ID Code please go to http://www.jedec.org/Home/MIDCODE_request.cfm

This document defines the electrical and mechanical requirements for Raw Card B, 288-pin, 1.2 Volt (VDD), Unbuffered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM UDIMMs). These DDR4 Unbuffered DIMMs (UDIMMs) are intended for use as main memory when installed in PCs. Item 2231.29A.

This specification defines the electrical and mechanical requirements for Raw Card E, 260-pin, 1.2 Volt (VDD), Small Outline, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM SODIMMs). These DDR4 SODIMMs are intended for use as main memory when installed in PCs, laptops, and other systems. Item 2228.33C.

This standard defines the input, output specifications and ac test conditions for devices that are designed to operate narrow range 1.05 V CMOS level. Item 159.01

Designator: PDMA-N288-I0p85-R133p8x5p57Z31p8R2p55x0p6
Item: 11.14-197, Access STP Files for MO-329B
Cross Reference: SO-023, GS-010C

This document defines the 3DS DDR4 SDRAM specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a compliant 8 Gbit through 128 Gbit for x4, x8 3DS DDR4 SDRAM devices. This addendum was created based on the JESD79-4 DDR4 SDRAM specification. Each aspect of the changes for 3DS DDR4 SDRAM operation was considered. Item 1727.58F

This standard is intended for use by SoC, ASIC, ASSP, and FPGA developers or vendors interested in incorporating a master interface having a low signal count and high data transfer bandwidth with access to multiple sources of slave devices compliant with the interface. It is also, intended for use by peripheral developers or vendors interested in providing slave devices compliant with the standard, including non-volatile memories, volatile memories, graphics peripherals, networking peripherals, FPGAs, sensors, etc. Item 1775.59 and 19-395.

This standard defines the specifications of interface parameters, signaling protocols, and features for DDR5 Serial Presence Detect EEPROM with Hub function (SPD5 Hub) and integrated Temperature Sensor (TS) as used for memory module applications. The Hub feature allows isolation of a local bus from a master host bus. The designations SPD5118 and SPD5108 refer to the families of devices specified by this document. The term SPD5 Hub refers generically to both devices in the family. Committee Item 1852.07F.

Designator: PBGA-B#[#]_I0p65...
Item: 11.11-970, Access STP File for MO-311E
Cross Reference: DR4.5

Designator: PBGA-B#[#}_I0p65
Item: 11.11-978, Access STP Files for MO-342A
Cross Reference: DR4.5

This standard specifies the extension specification of the UFS electrical interface and the memory device. This document describes the extended feature, called Host Performance Booster (HPB), in UFS specification. It also provides some details in how to utilize the HPB for realizing high performance in UFS devices. Committee item 135.29A

The HBM DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM DRAM uses a wide-interface architecture to achieve high-speed, low-power operation. The HBM DRAM uses differential clock CK_t/CK_c. Commands are registered at the rising edge of CK_t, CK_c. Each channel interface maintains a 128b data bus operating at DDR data rates. Also available for designer ease of use is HBM Ballout Spreadsheet. Committee item 1797.99K.

This standard describes a nondestructive test to assess solid state device mark legibility. The specification applies only to solid state devices that contain markings, regardless of the marking method. It does not define what devices must be marked or the method in which the device is marked, i.e., ink, laser, etc. The standard is limited in scope to the legibility requirements of solid state devices, and does not replace related reference documents listed in this standard.

This document replaces all past versions, however JESD220D, January (V 3.0), is available for reference only.The purpose of this standard is definition of an UFS Universal Flash Storage electrical interface and an UFS memory device. This standard defines a unique UFS feature set and includes the feature set of e·MMC Specification as a subset. This standard references also several other standard specifications by MIPI (M-PHY and UniPro Specifications) and INCITS T10 (SBC, SPC and SAM Standards) organizations.  For more information about how to access and download the MIPI specifications related to UFS, visit: https://www.mipi.org/mipi-jedec/DocumentRequestWelcome. Item 135.99

This table briefly describes the changes made to this standard, JESD21-C, Release 29, compared to its predecessor, JESD21C, Release 28.

This specification defines the electrical and mechanical requirements for Raw Card E, 288-pin, 1.2 Volt (VDD), Registered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM RDIMMs). These DDR4 Registered DIMMs (RDIMMs) are intended for use as main memory when installed in PCs. Committee Item 2149.52

Designator: PQFP-F8[10]_I127-R5p51x6.54Z1P1
Item: 11.11-959

JEP162A, while establishing the complex nature of System Level ESD, proposes that an efficient ESD design can only be achieved when the interaction of the various components under ESD conditions are analyzed at the system level. This objective requires an appropriate characterization of the components and a methodology to assess the entire system using simulation data. This is applicable to system failures of different categories (such as hard, soft, and electromagnetic interference (EMI)). This type of systematic approach is long overdue and represents an advanced design approach which replaces the misconception, as discussed in detail in JEP161, that a system will be sufficiently robust if all components exceed a certain ESD level.

Item 11.11-973, Access STP Files for MO-338A

This specification defines the electrical and mechanical requirements for the 288-pin, 1.2 Volt (VDD), Unbuffered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM UDIMMs). These DDR4 Unbuffered DIMMs are intended for use as main memory when installed in PCs. Item 2241.13A

This annex describes the serial presence detect (SPD) values for all DDR4 modules covered in Document Release 4. Differences between module types are encapsulated in subsections of this annex. These presence detect values are those referenced in the SPD standard document for ‘Specific Features’. Item 2220.01G. This is an editorial revision to the publication in January 2017.

The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables can be interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple vendors. Any company may request a Function Specific ID by making a request to the JEDEC office at juliec@jedec.org. Please include “Function Specific ID Request, JESD216” in the email subject line. Item 1775.15 and 1775.18.

This standard defines standard specifications for features and functionality, DC and AC interface parameters and test loading for definition of the DDR4 data buffer for driving DQ and DQS nets on DDR4 LRDIMM applications. Any TBDs as of this document, are under discussion by formulating committee. Item 314.11D

*If you downloaded this file between 8/7/2019 and 8/14/2019, please download again, the publication date on the document was incorrected and has been fixed.