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Displaying 1 - 4 of 4 documents.

Title	Document #	Date
Guidelines for Measuring the Threshold Voltage (VT) of SiC MOSFETs	JEP183A	Jan 2023
This publication describes the guidelines for VT measurement methods and conditioning prior to VT testing in SiC power MOSFETs to reduce or eliminate the effect of the aforementioned hysteresis. Committee(s): JC-70.1 Free download. Registration or login required.
Guideline for Evaluating Gate Switching Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion	JEP195	Feb 2023
This document elaborates on the information given in JEP184 regarding the long-time stability of device parameters under static conditions and under application near switching conditions. Committee(s): JC-70, JC-70.2 Free download. Registration or login required.
GUIDELINE FOR EVALUATING BIAS TEMPERATURE INSTABILITY OF SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR DEVICES FOR POWER ELECTRONIC CONVERSION	JEP184	Mar 2021
The scope of this document covers SiC-based PECS devices having a gate dielectric region biased to turn devices on and off. This typically refers to MOS devices such as MOSFETs and IGBTs. In this document, only NMOS devices are discussed as these are dominant for power device applications; however, the procedures apply to PMOS devices as well. Committee(s): JC-70.2 Free download. Registration or login required.
Guidelines for Representing Switching Losses of SIC MOSFETs in Datasheets	JEP187	Dec 2021
This document describes the impact of measurement and/or setup parameters on switching losses of power semiconductor switches; focusing primarily on SiC MOSFET turn-on losses. In terms of turn-off losses, the behavior of SiC MOSFETs is similar to that of existing silicon based power MOSFETs, and as such are adequately represented in typical datasheets. Committee(s): JC-70.2 Free download. Registration or login required.