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This publication describes guidelines for applying JEDEC reliability tests and recommended testing procedures to integrated circuits that require adapter test boards for electrical and
reliability testing. These tests are used frequently in qualifying integrated circuits as a new
product, a product family, or as products in a process which is being changed.

Committee(s): JC-14.3

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The test is applicable for evaluation, screening, monitoring, and/or qualification of all solid state devices.  The high temperature storage test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure mechanisms and time-to failure distributions of solid state electronic devices, including nonvolatile memory devices (data retention failure mechanisms). Thermally activated failure mechanisms are modeled using the Arrhenius Equation for acceleration. During the test, accelerated stress temperatures are used without electrical conditions applied. This test may be destructive, depending on time, temperature and packaging (if any).

Committee(s): JC-14.1

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JESD22-A115 is a reference document; it is not a requirement per JESD47 (Stress Test Driven Qualification of Integrated Circuits). Machine Model (MM) as described in JESD22-A115 should not be used as a requirement for integrated circuit ESD qualification. Only human-body model (HBM) and charged-device model (CDM) are the necessary ESD qualification test methods as specified in JESD47.

Refer to JEP172: Discontinuing Use of the Machine Model for Device ESD Qualification for more information.

Committee(s): JC-14.1

This publication contains frequently recommended and accepted JEDEC reliability stress tests applied to surface-mount solid state devices.

Committee(s): JC-14, JC-14.3

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This standard defines methods for calculating the early life failure rate of a product, using accelerated testing, whose failure rate is constant or decreasing over time. For technologies where there is adequate field failure data, alternative methods may be used to establish the early life failure rate. The purpose of this standard is to define a procedure for performing measurement and calculation of early life failure rates. Projections can be used to compare reliability performance with objectives, provide line feedback, support service cost estimates, and set product test and screen strategies to ensure that the ELFR meets customers' requirements.

Committee(s): JC-14, JC-14.3

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This fully revised test provides a means for determining the strength of gold and copper ball bonds to a die or package bonding surface, and may be performed on pre-encapsulation or post-encapsulation parts. Pictures have been added to enhance the fail mode diagrams. The wire bond shear test is destructive. The test method can also be used to shear aluminum and copper wedge bonds to a die or package bonding surface. It is appropriate for use in process development, process control and/or quality assurance.

Committee(s): JC-14, JC-14.1

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This document was written with the intent to provide information for quality organizations in both semiconductor companies and their customers to assess and make decisions on safe ESD level requirements. It will be shown through this document why realistic modifying of the ESD target levels for component level ESD is not only essential but is also urgent. The document is organized in different sections to give as many technical details as possible to support the purpose given in the abstract. In June 2009 the formulating committee approved the addition of the ESDA logo on the covers of this document. Please see Annex C for revision history.  Reaffirmed: January 2024

Committee(s): JC-14, JC-14.3

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Over the last several decades the so called "machine model" (aka MM) and its application to the required ESD component qualification has been grossly misunderstood. The scope of this JEDEC document is to present evidence to discontinue use of this particular model stress test without incurring any reduction in the IC component's ESD reliability for manufacturing. In this regard, the document's purpose is to provide the necessary technical arguments for strongly recommending no further use of this model for IC qualification. The published document should be used as a reference to propagate this message throughout the industry.

Committee(s): JC-14.3

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This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the devices’ operating condition in an accelerated way, and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as burn-in, may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this document.

Committee(s): JC-14, JC-14.1

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