Global Standards for the Microelectronics Industry
Standards & Documents Search
| Title | Document # |
Date |
|---|---|---|
DYNAMIC ON-RESISTANCE TEST METHOD GUIDELINES FOR GaN HEMT BASED POWER CONVERSION DEVICES, VERSION 1.0 |
JEP173 | Jan 2019 |
This document is intended for use in the GaN power semiconductor and related power electronic industries, and provides guidelines for measuring the dynamic ON-resistance of GaN power devices. Committee(s): JC-70.1 Free download. Registration or login required. |
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SOLID STATE RELIABILITY ASSESSMENT QUALIFICATION METHODOLOGIES |
JEP143D | Jan 2019 |
The purpose of this publication is to provide an overview of some of the most commonly used systems and test methods historically performed by manufacturers to assess and qualify the reliability of solid state products. The appropriate references to existing and proposed JEDEC (or EIA) standards and publications are cited. This document is also intended to provide an educational background and overview of some of the technical and economic factors associated with assessing and qualifying microcircuit reliability. Free download. Registration or login required. |
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ANSI/ESDA/JEDEC JOINT STANDARD FOR ELECTROSTATIC DISCHARGE SENSITIVITY TESTING – CHARGED DEVICE MODEL (CDM) – DEVICE LEVEL |
JS-002-2018 | Jan 2019 |
This standard establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this standard. This test method combines the main features of JEDEC JESD22-C101 and ANSI/ESD S5.3.1. Committee(s): JC-14.1 Free download. Registration or login required. |
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Registration - Plastic Multi Position Flange Mount Mixed Technology, 0.10 in. Pitch Package |
TO-220L | Jan 2019 |
Item 11.10-457 Free download. Registration or login required. |
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GUIDELINES FOR GaAs MMIC PHEMT/MESFET AND HBT RELIABILITY ACCELERATED LIFE TESTING |
JEP118A | Dec 2018 |
These guidelines apply to GaAs Monolithic Microwave Integrated Circuits (MMICs) and their individual component building blocks, such as GaAs Metal-Semiconductor Field Effect Transistors (MESFETs), Pseudomorphic High Electron Mobility Transistors (PHEMTs), Heterojunction Bipolar Transistors (HBTs), resistors, and capacitors. While the procedure described in this document may be applied to other semiconductor technologies, especially those used in RF and microwave frequency analog applications, it is primarily intended for technologies based on GaAs and related III-V material systems (InP, AlGaAs, InGaAs, InGaP, GaN, etc). Committee(s): JC-14.7 Free download. Registration or login required. |
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Annex A, R/C A, in 288-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM Unbuffered DIMM Design SpecificationRelease Number: 28 |
MODULE4.20.26.A | Dec 2018 |
This document defines the electrical and mechanical requirements for Raw Card A, 288-pin, 1.2 Volt (VDD), Unbuffered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM UDIMMs). These DDR4 Unbuffered DIMMs (UDIMMs) are intended for use as main memory when installed in PCs. Item 2231.21. Committee(s): JC-45.3 JESD21-C Solid State Memory Documents Main Page Free download. Registration or login required. |
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GRAPHICS DOUBLE DATA RATE 6 (GDDR6) SGRAM STANDARD |
JESD250B | Nov 2018 |
This document defines the Graphics Double Data Rate 6 (GDDR6) Synchronous Graphics Random Access Memory (SGRAM) specification, including features, functionality, package, and pin assignments. The purpose of this Specification is to define the minimum set of requirements for 8 Gb through 16 Gb x16 dual channel GDDR6 SGRAM devices. System designs based on the required aspects of this standard will be supported by all GDDR6 SGRAM vendors providing compatible devices. Some aspects of the GDDR6 standard such as AC timings and capacitance values were not standardized. Some features are optional and therefore may vary among vendors. In all cases, vendor data sheets should be consulted for specifics. This document was created based on some aspects of the GDDR5 Standard (JESD212). Item 1836.99D. Committee(s): JC-42.3C Free download. Registration or login required. |
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HIGH BANDWIDTH MEMORY (HBM) DRAM |
JESD235B | Nov 2018 |
The HBM DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM DRAM uses a wide-interface architecture to achieve high-speed, low-power operation. The HBM DRAM uses differential clock CK_t/CK_c. Commands are registered at the rising edge of CK_t, CK_c. Each channel interface maintains a 128b data bus operating at DDR data rates. Also available for designer ease of use is HBM Ballout Spreadsheet. Item 1797.99J. Committee(s): JC-42.3C Available for purchase: $228.00 Add to Cart Paying JEDEC Members may login for free access. |
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SERIAL FLASH DISCOVERABLE PARAMETERS (SFDP) |
JESD216D | Nov 2018 |
The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables can be interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple vendors. Any company may request a Function Specific ID by making a request to the JEDEC office at juliec@jedec.org. Please include “Function Specific ID Request, JESD216” in the email subject line. Item 1775.15 and 1775.18. Committee(s): JC-42.4 Free download. Registration or login required. |
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ELECTRICALLY ERASABLE PROGRAMMABLE ROM (EEPROM) PROGRAM/ERASE ENDURANCE AND DATA RETENTION TEST |
JESD22-A117E | Nov 2018 |
This stress test is intended to determine the ability of an EEPROM integrated circuit or an integrated circuit with an EEPROM module (such as a microprocessor) to sustain repeated data changes without failure (program/erase endurance) and to retain data for the expected life of the EEPROM (data retention). This Standard specifies the procedural requirements for performing valid endurance and retention tests based on a qualification specification. Endurance and retention qualification specifications (for cycle counts, durations, temperatures, and sample sizes) are specified in JESD47 or may be developed using knowledge-based methods as in JESD94. Committee(s): JC-14.1 Free download. Registration or login required. |
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Annex C, R/C C, in 288-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM Registered DIMM Design SpecificationRelease Number: 28 |
MODULE4.20.28.C | Nov 2018 |
This document defines the electrical and mechanical requirements for Raw Card C, 288-pin, 1.2 Volt (VDD), Registered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM RDIMMs). These DDR4 Registered DIMMs (RDIMMs) are intended for use as main memory when installed in PCs. Item 2149.44. Committee(s): JC-45.1 JESD21-C Solid State Memory Documents Main Page Free download. Registration or login required. |
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Annex B, R/C B, in 288-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM Unbuffered DIMM Design SpecificationRelease Number: 28 |
MODULE4.20.26.B | Nov 2018 |
This document defines the electrical and mechanical requirements for Raw Card B, 288-pin, 1.2 Volt (VDD), Unbuffered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM UDIMMs). These DDR4 Unbuffered DIMMs (UDIMMs) are intended for use as main memory when installed in PCs. Item 2231.29. Committee(s): JC-45.3 JESD21-C Solid State Memory Documents Main Page Free download. Registration or login required. |
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Annex D, R/C D, in 288-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM Unbuffered DIMM Design SpecificationRelease Number: 28 |
MODULE4.20.26.D | Nov 2018 |
This document defines the electrical and mechanical requirements for Raw Card D, 288-pin, 1.2 Volt (VDD), Unbuffered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM UDIMMs). These DDR4 Unbuffered DIMMs (UDIMMs) are intended for use as main memory when installed in PCs. Item 2231.37. Committee(s): JC-45.3 JESD21-C Solid State Memory Documents Main Page Free download. Registration or login required. |
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Annex A, R/C A, in 260-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM SODIMM Design SpecificationRelease Number: 28 |
MODULE4.20.25.A | Nov 2018 |
This document defines the electrical and mechanical requirements for Raw Card A, 260-pin, 1.2 Volt (VDD), Small Outline, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM SODIMMs). These DDR4 SODIMMs are intended for use as main memory when installed in PCs, laptops, and other systems. Item 2228.63. Committee(s): JC-45.3 JESD21-C Solid State Memory Documents Main Page Free download. Registration or login required. |
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Design Requirements - Ball Grid Array Package (BGA) and Interstitial Ball Grid Array Package (IBGA) |
DR-4.5N.01 | Nov 2018 |
Ball Pitch = 0.40, 0.50, 0.65, 0.75 and 0.80 mm. Body sizes = ≤ 21 mm.Item 11.2-968E, Editorial Change. Committee(s): JC-11.2 Free download. Registration or login required. |
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Registration - Plastic Bottom Grid Array Ball, 0.80 mm Pitch Square Family Package |
MO-216F | Nov 2018 |
PBGA-B#(#)_I80...Item 11-961 Committee(s): JC-11.11 Free download. Registration or login required. |
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SERIAL FLASH RESET SIGNALING PROTOCOL |
JESD252 | Oct 2018 |
This standard is intended for use by SoC, ASIC, ASSP, and FPGA developers or vendors interested in incorporating a signaling protocol for hardware resetting the Serial Flash device. In is also intended for use by peripheral developers or vendors interested in providing Serial Flash devices compliant with the standard. This standard defines a signaling protocol that allows the host to reset the slaved Serial Flash device without a dedicated hardware reset pin. Item 1775.06. Committee(s): JC-45.4 Free download. Registration or login required. |
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MECHANICAL COMPRESSIVE STATIC STRESS TEST METHOD |
JESD22-B119 | Oct 2018 |
This test method is intended for customers to determine the ability of a device to withstand the mechanical compressive static stress generated when a heat sink is being initially attached to the device, and to help the customer generate design rules for their heat sink design and validate their thermal solution. This test method does not assess the long-term effects of static stress. Committee(s): JC-14.1 Free download. Registration or login required. |
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Addendum No. 1 to JESD251 - OPTIONAL x4 QUAD I/O WITH DATA STROBE |
JESD251-1 | Oct 2018 |
This purpose of the addendum is to add an optional 4-bit bus width (x4) to JESD251, xSPI standard. The xSPI interface currently supports a x1 interface that acts as a bridge to legacy SPI functionality as well as the x8 interface intended to achieve dramatically higher bus performance than legacy SPI memory implementations. Item 1775.15. Committee(s): JC-42.4 Free download. Registration or login required. |
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COMPONENT QUALITY PROBLEM ANALYSIS AND CORRECTIVE ACTION REQUIREMENTS (INCLUDING ADMINISTRATIVE QUALITY PROBLEMS) |
JESD671D | Oct 2018 |
This revision now encompasses administrative quality problems, in addition to the electrical and visual/mechanical quality problems that were addressed in the original release. A standard set of problem categories for each of these three types of component problems is presented for tracking and reporting purposes. A common set of customer and supplier expectations and requirements are set forth to help facilitate the successful problem analysis and corrective action of any type of component quality problem. Formerly known as EIA-671 (November 1996). Became JESD671-A after revision, December 1999. Committee(s): JC-14.4 Free download. Registration or login required. |
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