Global Standards for the Microelectronics Industry
Standards & Documents Search
| Title | Document # |
Date |
|---|---|---|
Annex K, Raw Card K, in 260-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM SODIMM Design SpecificationRelease Number: 29 |
MODULE4.20.25.K.01 | Apr 2019 |
This specification defines the electrical and mechanical requirements for Raw Card K, 260-pin, 1.2 Volt (VDD), Small Outline, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM SODIMMs). These DDR4 SODIMMs are intended for use as main memory when installed in PCs, laptops, and other systems. Item 2228.59A Editorial. Committee(s): JC-45.3 JESD21-C Solid State Memory Documents Main Page Free download. Registration or login required. |
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Registration - 262 Pin DDR5 SODIMM, 0.50 mm Pitch Socket |
SO-024A | Apr 2019 |
Item 14-193 Committee(s): JC-11.14 Free download. Registration or login required. |
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Registration - 262 Pin SODIMM, 0.50 mm Pitch Package |
MO-337A | Apr 2019 |
Item 14-192 Committee(s): JC-11.14 Free download. Registration or login required. |
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Annex B, R/C B, in 288-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM Registered DIMM Design SpecificationRelease Number: 29 |
MODULE4.20.28.B | Mar 2019 |
This document defines the electrical and mechanical requirements for Raw Card B, 288-pin, 1.2 Volt (VDD), Registered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM RDIMMs). These DDR4 Registered DIMMs (RDIMMs) are intended for use as main memory when installed in PCs. Item 2149.50. Committee(s): JC-45.1 JESD21-C Solid State Memory Documents Main Page Free download. Registration or login required. |
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Annex C, R/C C, in 288-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM Registered DIMM Design SpecificationRelease Number: 29 |
MODULE4.20.28.C | Mar 2019 |
This document defines the electrical and mechanical requirements for Raw Card C, 288-pin, 1.2 Volt (VDD), Registered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM RDIMMs). These DDR4 Registered DIMMs (RDIMMs) are intended for use as main memory when installed in PCs. Item 2149.49. Committee(s): JC-45.1 JESD21-C Solid State Memory Documents Main Page Free download. Registration or login required. |
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Annex E, R/C E, in 288-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM Registered DIMM Design SpecificationRelease Number: 29 |
MODULE4.20.28.E | Mar 2019 |
This specification defines the electrical and mechanical requirements for Raw Card E, 288-pin, 1.2 Volt (VDD), Registered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM RDIMMs). These DDR4 Registered DIMMs (RDIMMs) are intended for use as main memory when installed in PCs. Item 2149.46 Committee(s): JC-45.1 JESD21-C Solid State Memory Documents Main Page Free download. Registration or login required. |
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STANDARD MANUFACTURERS IDENTIFICATION CODENOTE: JEP106U was in error starting with bank two an additional continuation code was added, JEP106U should be discarded. |
JEP106AY | Feb 2019 |
The manufacturers identification code is defined by one or more 8 bit fields, each consisting of 7 data bits plus 1 odd parity bit. The manufacturers identification code is assigned, maintained and updated by the JEDEC Office. The intent of this identification code is that it may be used whenever a digital field is required, e.g., hardware, software, documentation, etc. To make a request for an ID Code please go to http://www.jedec.org/Home/MIDCODE_request.cfm Free download. Registration or login required. |
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Annex A, R/C A, in 288-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM Unbuffered DIMM Design SpecificationRelease Number: 2928 |
MODULE4.20.26.A | Feb 2019 |
This document defines the electrical and mechanical requirements for Raw Card A, 288-pin, 1.2 Volt (VDD), Unbuffered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM UDIMMs). These DDR4 Unbuffered DIMMs (UDIMMs) are intended for use as main memory when installed in PCs. Item 2231.38. Committee(s): JC-45.3 JESD21-C Solid State Memory Documents Main Page Free download. Registration or login required. |
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LOW POWER DOUBLE DATA RATE 5 (LPDDR5) |
JESD209-5 | Feb 2019 |
This document defines the LPDDR5 standard, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a JEDEC compliant x16 one channel SDRAM device and x8 one channel SDRAM device. LPDDR5 device density ranges from 2 Gb through 32 Gb. This document was created using aspects of the following standards: DDR2 (JESD79-2), DDR3 (JESD79-3), DDR4 (JESD79-4), LPDDR (JESD209), LPDDR2 (JESD209-2), LPDDR3 (JESD209-3) and LPDDR4 (JESD209-4). Item 1854.99 Committee(s): JC-42.6 Available for purchase: $355.00 Add to Cart Paying JEDEC Members may login for free access. |
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Design Requirements - Ball Grid Array Package (BGA) |
DR-4.14J.01 | Feb 2019 |
Item 11.2-948E Committee(s): JC-11.2 Free download. Registration or login required. |
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DYNAMIC ON-RESISTANCE TEST METHOD GUIDELINES FOR GaN HEMT BASED POWER CONVERSION DEVICES, VERSION 1.0 |
JEP173 | Jan 2019 |
This document is intended for use in the GaN power semiconductor and related power electronic industries, and provides guidelines for measuring the dynamic ON-resistance of GaN power devices. Committee(s): JC-70.1 Free download. Registration or login required. |
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EMBEDDED MULTI-MEDIA CARD (e•MMC), ELECTRICAL STANDARD (5.1) |
JESD84-B51A | Jan 2019 |
This document provides a comprehensive definition of the e•MMC Electrical Interface, its environment, and handling. It also provides design guidelines and defines a tool box of macro functions and algorithms intended to reduce design-in overhead. The purpose of this standard is the definition of the e•MMC Electrical Interface, its environment and handling. It provides guidelines for systems designers. Item 67.14. This document replaces all past versions, however links to the replaced versions are provided here for reference only: JESD84-B51, February 2015; JESD84-B50.1, July 2014 (Editorial revision of JESD84-B50); JESD84-B50, September 2013 (Revision of JESD84-B451); JESD84-B451, June 2012 (Revision of JESD84-B45, June 2011) Patents(): A complete list of Assurance/Disclosure Forms is available to JEDEC members in the Members Area. Non-members can obtain individual Assurance/Disclosure Forms on request from the JEDEC office. Committee(s): JC-64 Available for purchase: $327.00 Add to Cart Paying JEDEC Members may login for free access. |
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SOLID STATE RELIABILITY ASSESSMENT QUALIFICATION METHODOLOGIES |
JEP143D | Jan 2019 |
The purpose of this publication is to provide an overview of some of the most commonly used systems and test methods historically performed by manufacturers to assess and qualify the reliability of solid state products. The appropriate references to existing and proposed JEDEC (or EIA) standards and publications are cited. This document is also intended to provide an educational background and overview of some of the technical and economic factors associated with assessing and qualifying microcircuit reliability. Free download. Registration or login required. |
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ANSI/ESDA/JEDEC JOINT STANDARD FOR ELECTROSTATIC DISCHARGE SENSITIVITY TESTING – CHARGED DEVICE MODEL (CDM) – DEVICE LEVEL |
JS-002-2018 | Jan 2019 |
This standard establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this standard. This test method combines the main features of JEDEC JESD22-C101 and ANSI/ESD S5.3.1. Committee(s): JC-14.1 Free download. Registration or login required. |
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Registration - Plastic Multi Position Flange Mount Mixed Technology, 0.10 in. Pitch Package |
TO-220L | Jan 2019 |
Item 11.10-457 Free download. Registration or login required. |
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GUIDELINES FOR GaAs MMIC PHEMT/MESFET AND HBT RELIABILITY ACCELERATED LIFE TESTING |
JEP118A | Dec 2018 |
These guidelines apply to GaAs Monolithic Microwave Integrated Circuits (MMICs) and their individual component building blocks, such as GaAs Metal-Semiconductor Field Effect Transistors (MESFETs), Pseudomorphic High Electron Mobility Transistors (PHEMTs), Heterojunction Bipolar Transistors (HBTs), resistors, and capacitors. While the procedure described in this document may be applied to other semiconductor technologies, especially those used in RF and microwave frequency analog applications, it is primarily intended for technologies based on GaAs and related III-V material systems (InP, AlGaAs, InGaAs, InGaP, GaN, etc). Committee(s): JC-14.7 Free download. Registration or login required. |
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GRAPHICS DOUBLE DATA RATE 6 (GDDR6) SGRAM STANDARD |
JESD250B | Nov 2018 |
This document defines the Graphics Double Data Rate 6 (GDDR6) Synchronous Graphics Random Access Memory (SGRAM) specification, including features, functionality, package, and pin assignments. The purpose of this Specification is to define the minimum set of requirements for 8 Gb through 16 Gb x16 dual channel GDDR6 SGRAM devices. System designs based on the required aspects of this standard will be supported by all GDDR6 SGRAM vendors providing compatible devices. Some aspects of the GDDR6 standard such as AC timings and capacitance values were not standardized. Some features are optional and therefore may vary among vendors. In all cases, vendor data sheets should be consulted for specifics. This document was created based on some aspects of the GDDR5 Standard (JESD212). Item 1836.99D. Committee(s): JC-42.3C Free download. Registration or login required. |
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HIGH BANDWIDTH MEMORY (HBM) DRAM |
JESD235B | Nov 2018 |
The HBM DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM DRAM uses a wide-interface architecture to achieve high-speed, low-power operation. The HBM DRAM uses differential clock CK_t/CK_c. Commands are registered at the rising edge of CK_t, CK_c. Each channel interface maintains a 128b data bus operating at DDR data rates. Also available for designer ease of use is HBM Ballout Spreadsheet. Item 1797.99J. Committee(s): JC-42.3C Available for purchase: $228.00 Add to Cart Paying JEDEC Members may login for free access. |
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SERIAL FLASH DISCOVERABLE PARAMETERS (SFDP) |
JESD216D | Nov 2018 |
The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables can be interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple vendors. Any company may request a Function Specific ID by making a request to the JEDEC office at juliec@jedec.org. Please include “Function Specific ID Request, JESD216” in the email subject line. Item 1775.15 and 1775.18. Committee(s): JC-42.4 Free download. Registration or login required. |
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ELECTRICALLY ERASABLE PROGRAMMABLE ROM (EEPROM) PROGRAM/ERASE ENDURANCE AND DATA RETENTION TEST |
JESD22-A117E | Nov 2018 |
This stress test is intended to determine the ability of an EEPROM integrated circuit or an integrated circuit with an EEPROM module (such as a microprocessor) to sustain repeated data changes without failure (program/erase endurance) and to retain data for the expected life of the EEPROM (data retention). This Standard specifies the procedural requirements for performing valid endurance and retention tests based on a qualification specification. Endurance and retention qualification specifications (for cycle counts, durations, temperatures, and sample sizes) are specified in JESD47 or may be developed using knowledge-based methods as in JESD94. Committee(s): JC-14.1 Free download. Registration or login required. |
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