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This standard describes the method to be used for the measurement of small-signal VHF-UHF transistor admittance parameters, in preparing data sheets for JEDEC registration of low power transistors. Formerly known as RS-372 and/or EIA-372

Committee(s): JC-25

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This test standard defines the requirements and procedures for 40 to 500 MeV proton irradiation of electronic devices for Single Event Effects (SEE), and reporting the results. Protons are capable of causing SEE by both direct and indirect ionization, however, in this energy range, indirect ionization will be the dominant cause of SEE [1-3]. Indirect ionization is produced from secondary particles of proton/material nuclear reactions, where the material is Si or any other element present in the semiconductor. Direct proton ionization is thought to be a minor source of SEE, at these energies. This energy range is also selected to coincide with the commonly used proton facilities, and result in the fewest energy dependent issues during test.

Committee(s): JC-13, JC-13.4

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Committee(s): JC-13, JC-13.2

This test method defines requirements and procedures for ground simulation and single event effects (SEE) and implementation of the method in testing integrated circuits. This standard is valid when using a cyclotron or Van de Graaff accelerator. Microcircuits under test must be delidded. The ions used at the facilities have an atomic number Z > 2. It does not apply to SEE testing that uses protons, neutrons, or other lighter particles. This standard is designed to eliminate any misunderstanding between users of the method and test facilities, to minimize delays, and to promote standardization of testing and test data.

Committee(s): JC-13.4

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The test methods described in this Standard are generally applicable to alloy-like devices for which the usual simplified equivalent circuits can be employed. Formerly known as EIA-284-A (November 1963). Became JESD284-A when reaffirmed in October 2002.

Committee(s): JC-25

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This standard specifies a collection of procedures for testing and character designation of liquid crystal devices.

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This test method covers X-ray imaging for terrestrial applications on packaged devices.

Committee(s): JC-14, JC-14.1

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This test is used to determine the Soft Error Rate (SER) of solid state volatile memory arrays and bistable logic elements (e.g. flip-flops) for errors which require no more than re-reading or re-writing to correct and as used in terrestrial environments. It simulates the operating condition of the device and is used for qualification, characterization, or reliability monitoring. This test is intended for execution in ambient conditions without the artificial introduction of radiation sources.

Committee(s): JC-14, JC-14.1

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Committee(s): JC-13

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This document is intended for use in the GaN power semiconductor and related power electronic industries and provides guidelines for test methods and circuits to be used for continuous-switching tests of GaN power conversion devices.

Committee(s): JC-70.1

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This test method is offered as standardized procedure to determine the alpha particle Soft Error Rate (SER) sensitivity of solid state volatile memory arrays and bistable logic elements (e.g. flipflops) by measuring the error rate while the device is irradiated by a characterized, solid alph source.

Committee(s): JC-14, JC-14.1

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This standard covers the design of printed circuit boards (PCBs) used in the thermal characterization of Pin Grid Array (PGA) packages. It is intended to be used in conjunction with the JESD51 series of standards that cover the test methods and test environments. JESD51-11 was developed to give a figure-of-merit of thermal performance that allows for accurate comparisons of packages from different suppliers. It can be used to give a first order approximation of system performance and, in conjunction with the other JESD51 PCB standards, allows for comparisons of the various package families.

Committee(s): JC-15.1

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Committee(s): JC-10

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A revised reference for technical writers and educators, manufacturers, buyers and users of microprocessors, microcomputers, mircocontrollers, memory ICs, and other complex devices. The terms and their definitions in this standard have been updated and are in general agreement with the latest publications of the IEEE and the IEC. The companion standard for other integrated circuits is JESD99A. Also included is a system for generating symbols for time intervals found in complex sequential circuits, including memories. JESD100B.01 is the first minor revision of JESD100-B, December 1999. Annex A briefly shows entries that have changed.

Committee(s): JC-10

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This document provides a unified collection of the commonly used terms and definitions in the area of LED thermal measurements. The terms and definitions provided herein extend beyond those used in the JESD51 family of documents, especially in JESD51-13, in order to include other often used terms and definitions in the area of light output measurements of LEDs. Definitions, symbols and notations regarding light output measurements used here are consistent with those defined in JESD77C.01 and with those defined by CIE (International Commission on Illumination), especially in the International Lighting Vocabulary, CIE S 017/E:2011 ILV and in the CIE 127-2007 document as well as in some other relevant standards of other standardization bodies from the solid-state lighting industry, e.g., ANSI/IESNA RP 16-05.

Committee(s): JC-15

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This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the devices’ operating condition in an accelerated way, and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as burn-in, may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this document.

Committee(s): JC-14, JC-14.1

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A DRAM rowhammer security exploit is a serious threat to cloud service providers, data centers, laptops, smart phones, self-driving cars and IoT devices. Hardware research and development will take time. DRAM components, DRAM DIMMs, System-on-chip (SoC), chipsets and system products have their own design cycle time and overall life time. This publication recommends best practices to mitigate the security risks from rowhammer attacks. Item 1866.02.

Committee(s): JC-42

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This white paper presents the recent knowledge of system ESD field events and air discharge testing methods. Testing experience with the IEC 61000-4-2 (2008) and the ISO 10605 ESD standards has shown a range of differing interpretations of the test method and its scope. This often results in misapplication of the test method and a high test result uncertainty. This white paper aims to explain the problems observed and to suggest improvements to the ESD test standard and to enable a correlation with a SEED IC/PCB co-design methodology.

Committee(s): JC-14.3

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Release No. 9

Committee(s): JC-42.3

JESD21-C Solid State Memory Documents Main Page

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This standard will be useful to anyone engaged in handling semiconductor devices and integrated circuits that are subject to permanent damage due to electrostatic potentials. The standard establishes a symbol and label that will gain the attention of those persons who might inflict electrostatic damage to the device. The label which is placed on the lowest practical level of packaging contains the words 'ATTENTION - OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES'. The symbol contained in this label, which may be used on the device itself, shows a hand in a triangle with a bar through it. Formerly known as EIA-471.

Committee(s): JC-10, JC-14.3

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A complete set of test methods can be obtained from Global Engineering Documents

Committee(s): JC-14.1

This manual establishes requirements for the preparation of standards and certain other publications of the JEDEC Solid State Technology Association.

Committee(s): JC-10

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This standard describes a baseline set of acceptance tests for use in qualifying electronic components as new products, a product family, or as products in a process which is being changed.

Committee(s): JC-14, JC-14.3

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This standard establishes a defined method and conditions for performing a temperature-humidity life test with bias applied. The test is used to evaluate the reliability of nonhermetic packaged solid state devices in humid environments. It employs high temperature and humidity conditions to accelerate the penetration of moisture through external protective material or along interfaces between the external protective coating and conductors or other features that pass through it. This revision enhances the ability to perform this test on a device which cannot be biased to achieve very low power dissipation.

Committee(s): JC-14, JC-14.1

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This document describes design of test structures needed to assess the reliability of aluminum-copper, refractory metal barrier interconnect systems. This includes any metal interconnect system where a refractory metal barrier or other barrier material prevents the flow of aluminum and/or copper metal ions from moving between interconnect layers. This document is not intended to show design of test structures to assess aluminum or aluminum-copper alloy systems, without barriers to Al and Cu ion movement, nor for Cu only metal systems. Some total interconnect systems might not include barrier materials on all metal layers. The structures in this standard are designed for cases where a barrier material separates two Al or Al alloy metal layers. The purpose of this document is to describe the design of test structures needed to assess electromigration (EM) and stress-induced-void (SIV) reliability of AlCu barrier metal systems.

Committee(s): JC-14.2, JC-14.21

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This document is intended to be used by Original Component Manufacturers who deliver electronic components and Original Equipment Manufacturers who are the platform system integrators. It is intended to be applied prior to delivery by the OCMs and may be used by OEM system engineers and procuring activities as well as U.S Government Department of Defense system engineers, procuring activities and repair centers. This Standard establishes the instrumentation, techniques, criteria, and methods to be utilized to quantify the amount of Lead (Pb) in Tin-Lead (Sn/Pb) alloys and electroplated finishes containing at least 3 weight percent (wt%) Lead (Pb) using X-Ray Fluorescence (XRF) equipment.  Reaffirmed June 2023

Committee(s): JC-13

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STAPL is a vendor- and platform-independent language for programming and testing devices via the IEEE standard 1149.1 interface, commonly known as JTAG. STAPL enables programming of designs into programmable logic devices (PLDs) offered by a variety of PLD vendors. STAPL is also suitable for testing 1149.1-compliant devices.

Committee(s): JC-42.1

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This standard provides for uniformity, multiplicity of sources, elimination of confusion, and ease of device specifications and system design by users. It gives electrical levels and timing diagrams for B Series CMOS devices.

Committee(s): JC-40.2

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Committee(s): JC-11, JC-11.2

JEP95 Registrations Main Page

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