Standards & Documents Search

Item 11.2-965(E)

Committee(s): JC-11, JC-11.2

JEP95 Registrations Main Page

Free download. Registration or login required.

The Flip Chip Tensile Pull Test Method is performed to determine the fracture mode and strength of the solder bump interconnection between the flip chip die and the substrate. It should be used to assess the consistency of the chip join process. This test method is a destructive test.

Committee(s): JC-14.1

Free download. Registration or login required.

A DRAM rowhammer security exploit is a serious threat to cloud service providers, data centers, laptops, smart phones, self-driving cars and IoT devices. Hardware research and development will take time. DRAM components, DRAM DIMMs, System-on-chip (SoC), chipsets and system products have their own design cycle time and overall life time. This publication recommends best practices to mitigate the security risks from rowhammer attacks. Item 1866.02.

Committee(s): JC-42

Free download. Registration or login required.

The HBM DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM DRAM uses a wide-interface architecture to achieve high-speed, low-power operation. The HBM DRAM uses differential clock CK_t/CK_c. Commands are registered at the rising edge of CK_t, CK_c. Each channel interface maintains a 128b data bus operating at DDR data rates. Also available for designer ease of use is HBM Ballout Spreadsheet (Note this version is the latest version for use with JESD235D). Committee item 1797.99L.

Committee(s): JC-42.3C

Available for purchase: $247.00 Add to Cart

Paying JEDEC Members may login for free access.

This document defines the 3DS DDR4 SDRAM specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a compliant 8 Gbit through 128 Gbit for x4, x8 3DS DDR4 SDRAM devices. This addendum was created based on the JESD79-4 DDR4 SDRAM specification. Each aspect of the changes for 3DS DDR4 SDRAM operation was considered. Item 1727.58G

Committee(s): JC-42.3C

Free download. Registration or login required.

This version is a minor editorial adding Annex B that was left out of the original publication October 2020.

An NVDIMM-P device is defined as a LRDIMM memory module which provides host controller access to DRAM and/or other memory devices such as persistent memory.  A transactional protocol is described for NVDIMM-P, which may be used on a DDR interface allowing operation of both standard DRAM modules and NVDIMM-P modules on the same channel. Item 2233.98K.

Committee(s): JC-45.6

Free download. Registration or login required.

This standard identifies the best commercial practices for mitigating and/or avoiding counterfeit products by all manufacturers of electronic parts including, but not limited to original component manufacturers (OCMs), authorized aftermarket manufacturers, and other companies that manufacture electronic parts under their own logo, name, or trademark. The types of product this standard applies to is limited to monolithic microcircuits, hybrid microcircuits and discrete semiconductor products.

Committee(s): JC-13

Free download. Registration or login required.

This document is intended for use in the GaN power semiconductor and related power electronic industries and provides guidelines for test methods and circuits to be used for continuous-switching tests of GaN power conversion devices.

Committee(s): JC-70.1

Free download. Registration or login required.

This standard establishes a defined method and conditions for performing a temperature-humidity life test with bias applied. The test is used to evaluate the reliability of nonhermetic packaged solid state devices in humid environments. It employs high temperature and humidity conditions to accelerate the penetration of moisture through external protective material or along interfaces between the external protective coating and conductors or other features that pass through it. This revision enhances the ability to perform this test on a device which cannot be biased to achieve very low power dissipation.

Committee(s): JC-14, JC-14.1

Free download. Registration or login required.

This specification defines the electrical and mechanical requirements for Raw Card D, 288-pin, 1.2 Volt (VDD), Load Reduced, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM LRDIMMs). These DDR4 Load Reduced DIMMs (LRDIMMs) are intended for use as main memory when installed in PCs. Item 2204.23

Committee(s): JC-45.4

JESD21-C Solid State Memory Documents Main Page

Free download. Registration or login required.

This document defines the electrical and mechanical requirements for Raw Card B, 288-pin, 1.2 Volt (VDD), Unbuffered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM UDIMMs). These DDR4 Unbuffered DIMMs (UDIMMs) are intended for use as main memory when installed in PCs. Item 2231.26.

Committee(s): JC-45.3

JESD21-C Solid State Memory Documents Main Page

Free download. Registration or login required.

This specification defines the electrical and mechanical requirements for Raw Card E, 288-pin, 1.2 Volt (VDD), Load Reduced, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM LRDIMMs). These DDR4 Load Reduced DIMMs (LRDIMMs) are intended for use as main memory when installed in PCs. Item 2232.20.

Committee(s): JC-45.4

JESD21-C Solid State Memory Documents Main Page

Free download. Registration or login required.

This document defines the electrical and mechanical requirements for Raw Card A, 288-pin, 1.2 Volt (VDD), Unbuffered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM UDIMMs). These DDR4 Unbuffered DIMMs (UDIMMs) are intended for use as main memory when installed in PCs. Committee Item 2231.38A.

Committee(s): JC-45.3

JESD21-C Solid State Memory Documents Main Page

Free download. Registration or login required.

This annex describes the serial presence detect (SPD) values for all DDR4 modules covered in Document Release 6. Differences between module types are encapsulated in subsections of this annex. These presence detect values are those referenced in the SPD standard document for ‘Specific Features’. Item 2220.01H.

Committee(s): JC-45

JESD21-C Solid State Memory Documents Main Page

Free download. Registration or login required.

The Cycled Temperature-humidity-bias Life Test is performed for the purpose of evaluating the reliability of nonhermetic packaged solid state devices in humid environments. It employs conditions of temperature cycling, humidity, and bias that accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors that pass through it. The Cycled Temperature-Humidity-Bias Life Test is typically performed on cavity packages (e.g., MQUADs, lidded ceramic pin grid arrays, etc.) as an alternative to JESD22-A101 or JESD22-A110.

Committee(s): JC-14, JC-14.1

Free download. Registration or login required.

Definition for all DDRx component documents to reference. This is generic to any DDRx
technology. Item 1842.34

Committee(s): JC-42.3C

Free download. Registration or login required.

This standard specifies the extension specification of the UFS electrical interface and the memory device. This document describes the extended feature, called Host Performance Booster (HPB), in UFS specification. It also provides some details in how to utilize the HPB for realizing high performance in UFS devices. Committee item 138.34

Patents(): WD: 9,323,657

Committee(s): JC-64.1

Available for purchase: $80.00 Add to Cart

Paying JEDEC Members may login for free access.

Item 11.10-458

Committee(s): JC-11.10

JEP95 Registrations Main Page

Free download. Registration or login required.

This specification defines the electrical and mechanical requirements for Raw Card E, 288-pin, 1.2 Volt (VDD), Registered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM RDIMMs). These DDR4 Registered DIMMs (RDIMMs) are intended for use as main memory when installed in PCs. Committee Item 2149.34a

Committee(s): JC-45.1

JESD21-C Solid State Memory Documents Main Page

Free download. Registration or login required.

This document defines the electrical and mechanical requirements for Raw Card B, 288-pin, 1.2 Volt (VDD), Registered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM RDIMMs). These DDR4 Registered DIMMs (RDIMMs) are intended for use as main memory when installed in PCs. Committee Item 2149.38a.

Committee(s): JC-45.1

JESD21-C Solid State Memory Documents Main Page

Free download. Registration or login required.

For UFS Card 6 Gb/s

Item 11.14-195S

Committee(s): JC-11.14

JEP95 Registrations Main Page

Free download. Registration or login required.

This annex defines the electrical and mechanical requirements for Raw Card G, 260-pin, 1.2 Volt (VDD), Small Outline, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM SODIMMs). These DDR4 SODIMMs are intended for use as main memory when installed in PCs, laptops, and other systems. Item No. 2228.34C

Committee(s): JC-45.3

JESD21-C Solid State Memory Documents Main Page

Free download. Registration or login required.

This annex defines the electrical and mechanical requirements for Raw Card C, 260-pin, 1.2 Volt (VDD), Small Outline, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM SODIMMs). These DDR4 SODIMMs are intended for use as main memory when installed in PCs, laptops, and other systems. Item 2228.31B

Committee(s): JC-45.3

JESD21-C Solid State Memory Documents Main Page

Free download. Registration or login required.

This Test Method establishes an industry standard preconditioning flow for nonhermetic solid state SMDs (surface mount devices) that is representative of a typical industry multiple solder reflow operation. These SMDs should be subjected to the appropriate preconditioning sequence of this document by the semiconductor manufacturer prior to being submitted to specific in-house reliability testing (qualification and reliability monitoring) to evaluate long term reliability (which might be impacted by solder reflow).

Committee(s): JC-14.1

Free download. Registration or login required.

Designator: PBGA-B#[#}_I0p65

Item: 11.11-978, Access STP Files for MO-342A

Cross Reference: DR4.5

Committee(s): JC-11.11

JEP95 Registrations Main Page

Free download. Registration or login required.

The power and temperature cycling test is performed to determine the ability of a device to withstand alternate exposures at high and low temperature extremes and simultaneously the operating biases are periodically applied and removed. It is intended to simulate worst case conditions encountered in application environments. The power and temperature cycling test is considered destructive and is only intended for device qualification. This test method applies to semiconductor devices that are subjected to temperature excursions and required to power on and off during all temperatures.

Committee(s): JC-14, JC-14.1

Free download. Registration or login required.

This document has been superseded by JESD220F, August 2022, however is available for reference only.

Patents(): A complete list of Assurance/Disclosure Forms is available to JEDEC members in the Members Area. Non-members can obtain individual Assurance/Disclosure Forms on request from the JEDEC office.

Committee(s): JC-64.1

Available for purchase: $355.00 Add to Cart

Paying JEDEC Members may login for free access.

This table briefly describes the changes made to this standard, JESD21-C, Release 29, compared to its predecessor, JESD21C, Release 28.

Committee(s): JC-42.2, JC-42.3

JESD21-C Solid State Memory Documents Main Page

Free download. Registration or login required.

This annex describes the serial presence detect (SPD) values for all DDR4 modules covered in Document Release 5. Differences between module types are encapsulated in subsections of this annex. These presence detect values are those referenced in the SPD standard document for ‘Specific Features’. Item 2276.05.

Committee(s): JC-45

JESD21-C Solid State Memory Documents Main Page

Free download. Registration or login required.