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Terminology update.  This standard defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the SSTUB32868 registered buffer with parity test for DDR2 RDIMM applications. The purpose is to provide a standard for the SSTUB32868 (see Note) logic device, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use.

Committee(s): JC-40

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Terminology update.  This standard defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the SSTUA32S869 and SSTUA32D869 registered buffer with parity for driving heavy load on high-density DDR2 RDIMM applications. A typical application would be a 36 SDRAM planar DIMM. The SSTUA32S869 and SSTUA32D869 are identical in functionality to the SSTU32S869 and SSTU32D869 devices respectively but specify tighter timing characteristics and a higher application frequency of up to 410MHz.

Committee(s): JC-40

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This standard describes the serial presence detect (SPD) values for all DDR5 memory modules. In this context, “modules” applies to memory modules like traditional Dual In-line Memory Modules (DIMMs) or solder-down motherboard applications. The SPD data provides critical information about all modules on the memory channel and is intended to be used by the system's BIOS in order to properly initialize and optimize the system memory channels.

Committee(s): JC-45

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The HBM3 DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM3 DRAM uses a wide-interface architecture to achieve high-speed, low power operation. Each channel interface maintains a 64 bit data bus operating at double data rate (DDR).

Patents(): A complete list of Assurance/Disclosure Forms is available to JEDEC members in the Members Area. Non-members can obtain individual Assurance/Disclosure Forms on request from the JEDEC office.

Committee(s): JC-42, JC-42.2

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This publication defines a QGS, TOT, QGD and QGS, TH which can be extracted from a measured QG waveform for SiC MOSFETs.

Committee(s): JC-70, JC-70.2

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This is a re-publication of a white paper which reports on a survey that has been conducted to better understand how the latch-up standard JESD78 revision E (JESD78E) is interpreted and has been used in the industry.

Committee(s): JC-14, JC-14.1

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This standard covers the I-test and Vsupply overvoltage latch-up testing of integrated circuits. The purpose of this standard is to establish a method for determining IC latch-up characteristics and to define latch-up detection criteria. Latch-up characteristics are extremely important in determining product reliability and minimizing No Trouble Found (NTF) and Electrical Overstress (EOS) failures due to latch-up. This test method is applicable to NMOS, CMOS, bipolar, and all variations and combinations of these technologies. This standard has been adopted by the Defense Logistics Agency (DLA) as project 5962-1880.

Committee(s): JC-14, JC-14.1

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The purpose of this standard is to identify the classification level of non-hermetic SMDs that are sensitive to moisture-induced stress so that they can be properly packaged, stored, and handled to avoid damage during assembly solder reflow attachment and/or repair operations.

Committee(s): JC-14, JC-14.1

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This guideline provides a methodology to characterize a new or existing process and is applicable to any manufacturing or service process. It describes when to use specific tools such as failure mode effects analysis (FEMA), design or experiments (DOE), measurement system evaluation (MSE), capability analysis (CpK), statistical process control (SPC), and problem solving tools. It also provides a brief description of each tool.

Committee(s): JC-13

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This standard describes SPI bus transactions intended to support Secure Flash operation on a serial memory device. The on-chip SFDP database described in JESD216 has been revised to include details about the secure transactions. This ballot does not describe the SFDP revisions or the secure packet structure.

Patents(): Infineon- US 10868679B1 and Micron- US 9009394B2

Committee(s): JC-42, JC-42.4

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This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the devices’ operating condition in an accelerated way, and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as burn-in, may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this document.

Committee(s): JC-14, JC-14.1

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This standard defines the specifications of interface parameters, signaling protocols, environmental requirements, packaging, and other features for a solid state drive (SSD) targeted primarily at automotive applications.

Committee(s): JC-64, JC-64.8

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This standard establishes requirements for the generation of electronic-device package designators for the JEDEC Solid State Technology Association. The requirements herein are intended to ensure that such designators are presented in as uniform a manner as practicable. Item 11.2-1002.
NOTE IF YOU DOWNLOADED THIS DOCUMENT PRIOR TO 12/16/2022 PLEASE DISCARD AND VIEW AGAIN, PREVIOUS VERSION CONTAINED FORMAT ISSUES.

Committee(s): JC-11.2

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This publication provides an overview of solder void types, outlines current metrologies and test methods used for pre-SMPT solder void characterization and potential limitations, and prescribes sampling strategy for data collection, and tolerance guidelines for corrective measures.

Committee(s): JC-14.1

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This standard provides a comprehensive definition of the NOR cryptographic security hardware abstraction layer (HAL). It also provides design guidelines and reference software to reduce design-in overhead and facilitate the second sourcing of secure memory devices. It does not attempt to standardize any other interaction to the NOR device that is not related to cryptographic security functionality within the device.

Committee(s): JC-42.4

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This standard defines the form, fit and function of SODIMM DDR5 connectors for modules supporting channels with transfer rates 6.4 GT/S and beyond. It contains mechanical, electrical and reliability requirements for a one-piece connector mated to a module with nominal thickness of 1.20 mm. The intent of this document is to provide performance standards to enable connector, system designers and manufacturers to build, qualify and use the SODIMM DDR5 connectors in client and server platforms. Item 11.14-214S

Committee(s): JC-11.14

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This standard defines the form, fit and function of DDR5 connectors for U/R/LR modules supporting channels with transfer rates up to 6.4 GT/S. It contains mechanical, electrical and reliability requirements for connector mated to a module with nominal thickness of 1.27 mm. The intent of this document is to provide Performance Standards to enable connector, system designers and manufacturers to build, qualify and use the DDR5 connectors in client and server platforms. Item 11.14-213S

Committee(s): JC-11.14

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This standard defines the specification of interface parameters, signaling protocols, and features for PMIC devices used for memory module applications. The designation PMIC5100 refers to the device specified by this document. The purpose is to provide a standard for the PMIC5100 device for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. Item 336.01C

Committee(s): JC-40.1

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This test method is offered as a standardized procedure to determine the total dose limit of DRAMs by measuring its refresh time tRef degradation after the device is irradiated with an X-Ray dose. This test method is applicable to any packaged device that contains a DRAM die or any embedded DRAM structure. Some indirect test methods such as wafer level characterization of total dose induced changes in leakage of access transistors are not described in this standard but are permissible as long as a good correlation is established.

Committee(s): JC-14.1

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This standard defines the assumptions for the system management bus for next generation memory solutions; covering the interface protocol, use of hub devices, and voltages appropriate to these usages. Item 2260.56A.

Committee(s): JC-45

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Item 11-993Designator: PBGA-B#[#]_I0p73...

Committee(s): JC-11.11

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Item: 11.4-996EDesignator: SBGA-M7775[23828]_D0p073... Item: 11.4-996Access STP Files for MO-349ACross Reference: DR4.26

Committee(s): JC-11.4

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Item 11.10-460Designator: PMFM K#_I...

Committee(s): JC-11.10

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This standard defines the DDR5 SDRAM Specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this Standard is to define the minimum set of requirements for JEDEC compliant 8 Gb through 32 Gb for x4, x8, and x16 DDR5 SDRAM devices. This standard was created based on the DDR4 standards (JESD79-4) and some aspects of the DDR, DDR2, DDR3, and LPDDR4 standards (JESD79, JESD79-2, JESD79-3, and JESD209-4). Item 1848.99M.

Committee(s): JC-42.3B

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This annex JESD309-S0-RCB, DDR5 Small Outline Dual Inline Memory Module with 0-bit ECC (EC0 SODIMM) Raw Card B Annex" defines the design detail of x8, 2 Package Ranks DDR5 NECC SODIMM. The common feature of DDR5 SODIMM such as the connector pinout can be found in the JESD309, DDR5 Small Outline Dual Inline Memory Module (SODIMM) Common Standard.

Committee(s): JC-45.3

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This document replaces all past versions, however JESD220E, January 2020 (V 3.1), is available for reference only. This standard specifies the characteristics of the UFS electrical interface and the memory device. Such characteristics include (among others) low power consumption, high data throughput, low electromagnetic interference and optimization for mass memory subsystem efficiency. The UFS electrical interface is based on an advanced differential interface by MIPI M-PHY specification which together with the MIPI UniPro specification forms the interconnect of the UFS interface.

Committee(s): JC-64.1

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This annex JESD308-U0-RCB, DDR5 Unbuffered Dual Inline Memory Module (UDIMM) Raw Card B Annex defines the design detail of x8, 2 Package Ranks DDR5 UDIMM. The common feature of DDR5 UDIMM such as the connector pinout can be found in the JESD308, DDR5 Unbuffered Dual Inline Memory Module (UDIMM) Common Standard. Item 2265.11A

Committee(s): JC-45.3

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This annex JESD308-U0-RCA, DDR5 Unbuffered Dual Inline Memory Module (UDIMM) Raw Card AAnnex defines the design detail of x8, 1 Package Rank DDR5 UDIMM. The common feature of DDR5 UDIMM such as the connector pinout can be found in the JESD308, DDR5 Unbuffered Dual Inline Memory Module (UDIMM) Common Standard. Item 2265.13A

Committee(s): JC-45.3

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This annex JESD308-U4-RCD, DDR5 Unbuffered Dual Inline Memory Module with 4-bit ECC (EC4UDIMM) Raw Card D Annex defines the design detail of x8, 1 Package Rank DDR5 UDIMM with 4-bit ECC. The common feature of DDR5 UDIMM such as the connector pinout can be found in the JESD308, DDR5 Unbuffered Dual Inline Memory Module (UDIMM) Common Standard. Item 2265.14A

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