Global Standards for the Microelectronics Industry
Standards & Documents Search
Title |
Document # | Date |
|---|---|---|
ADDENDUM No. 3 to JESD24 - THERMAL IMPEDANCE MEASUREMENTS FOR VERTICAL POWER MOSFETS (DELTA SOURCE-DRAIN VOLTAGE METHOD):Status: Reaffirmed |
JESD24- 3 | Nov 1990 |
The purpose of this test method is to measure the thermal impedance of the MOSFET under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity if the forward voltage drop of the source-drain is used as the junction temperature indicator. This method is particularly suitable to enhancement mode, power MOSFETs having relatively long thermal response times. This test method may be used to measure the thermal response of junction to a heating pulse, to ensure proper die mountdown to its case, or the dc thermal resistance, by the proper choice of the pulse duration and magnitude if the heating pulse. Committee(s): JC-25 Free download. Registration or login required. |
||
Addendum No. 3 to JESD79-3, 3D STACKED SDRAM |
JESD79-3-3 | Dec 2013 |
This addendum to JESD79-3 defines the 3DS DDR3 SDRAM specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for compliant 8Gbit through 64Gbit x4 and x8 3DS DDR3 SDRAM devices. This document was created based on the E revision of the DDR standard (JESD79). Each aspect of the changes for 3DS DDR3 SDRAM operation was considered. Committee(s): JC-42.3 Free download. Registration or login required. |
||
ADDENDUM No. 3A to JESD8 - GUNNING TRANSCEIVER LOGIC (GTL) LOW-LEVEL, HIGH-SPEED INTERFACE STANDARD FOR DIGITAL INTEGRATED CIRCUITS: |
JESD8-3A | May 2007 |
This Addendum No. 3 to JEDEC Standard No. 8 defines the dc input and output specifications for a low-level, high-speed interface for integrated devices. Patents(): 5,023,488 Committee(s): JC-16 Free download. Registration or login required. |
||
ADDENDUM No. 4 to JESD12 - METHOD OF SPECIFICATION OF PERFORMANCE PARAMETERS FOR CMOS SEMICUSTOM INTEGRATED CIRCUITS: |
JESD12-4 | Apr 1987 |
This standard defines how to specify various performance parameters of semicustom ICs, including cell and interconnect propagation delays, input/output levels and capacitance, and power dissipation. Committee(s): JC-44 Free download. Registration or login required. |
||
ADDENDUM No. 4 to JESD24 - THERMAL IMPEDANCE MEASUREMENTS FOR BIPOLAR TRANSISTORS (DELTA BASE-EMITTER VOLTAGE METHOD):Status: ReaffirmedOctober 2002 |
JESD24- 4 | Nov 1990 |
The purpose of this test method is to measure the thermal impedance of the Bipolar Transistor under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity of the base-emitter voltage is used as the junction temperature indicator. This test method is used to measure the thermal response of the junction to a heating pulse. Specifically, the test may be used to measure dc thermal resistance, and to ensure proper die mountdown to its case. This is accomplished through the appropriate choice of pulse duration and heating power magnitude. Committee(s): JC-25 Free download. Registration or login required. |
||
