Global Standards for the Microelectronics Industry
Standards & Documents Search
Title | Document # |
Date![]() |
---|---|---|
Guideline for Evaluating Gate Switching Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion |
JEP195 | Feb 2023 |
This document elaborates on the information given in JEP184 regarding the long-time stability of device parameters under static conditions and under application near switching conditions. Free download. Registration or login required. |
||
Guideline for Gate Oxide Reliability and Robustness Evaluation Procedures for Silicon Carbide Power MOSFETs |
JEP194 | Feb 2023 |
This document provides guidelines for evaluating gate reliability and lifetime testing for silicon carbide (SiC) based power devices with a gate oxide or gate dielectric. Free download. Registration or login required. |
||
DEFINITION OF THE SSTU32S869 AND SSTU32D869 REGISTERED BUFFER WITH PARITY FOR DDR2 RDIMM APPLICATIONS |
JESD82-12A.01 | Feb 2023 |
Terminology update. Committee(s): JC-40 Free download. Registration or login required. |
||
DEFINITION OF THE SSTUA32S868 AND SSTUA32D868 REGISTERED BUFFER WITH PARITY FOR 2R X 4 DDR2 RDIMM APPLICATIONS |
JESD82-17.01 | Feb 2023 |
(Terminology update.) This standard defines standard specifications of DC interface parameters, switching parameters, and test loading for definition of the SSTUA32S868 and SSTUA32D868 registered buffer with parity test for DDR2 RDIMM applications. Free download. Registration or login required. |
||
FBDIMM: ARCHITECTURE AND PROTOCOL |
JESD206.01 | Feb 2023 |
Terminology update. Patents(): There are known patent issues that are common to all FBDIMM related specifications. See document for link to FBDIMM Patents. Committee(s): JC-40 Free download. Registration or login required. |