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The purpose of this standard is definition of an energy backed byte addressable function on a nonvolatile dual in-line memory module (NVDIMM). This standard defines the feature set and commands implemented by the energy backed byte addressable function on the NVDIMM.  This standard is used in conjunction with JESD248.  Item 2233.54F

Committee(s): JC-45.6

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This document specifies standard temperature ranges that may be used, by way of referencing JESD402-1, in other standards, specifications, and datasheets when defining temperature related specifications. Item 1855.01A

Committee(s): JC-42

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The manufacturers identification code is defined by one or more 8 bit fields, each consisting of 7 data bits plus 1 odd parity bit. The manufacturers identification code is assigned, maintained and updated by the JEDEC Office. The intent of this identification code is that it may be used whenever a digital field is required, e.g., hardware, software, documentation, etc. To make a request for an ID Code please go to http://www.jedec.org/Home/MIDCODE_request.cfm

Committee(s): JC-42, JC-42.3

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This document defines the electrical and mechanical requirements for Raw Card B, 288-pin, 1.2 Volt (VDD), Unbuffered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM UDIMMs). These DDR4 Unbuffered DIMMs (UDIMMs) are intended for use as main memory when installed in PCs. Item 2231.29A.

Committee(s): JC-45.3

JESD21-C Solid State Memory Documents Main Page

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This specification defines the electrical and mechanical requirements for Raw Card E, 260-pin, 1.2 Volt (VDD), Small Outline, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM SODIMMs). These DDR4 SODIMMs are intended for use as main memory when installed in PCs, laptops, and other systems. Item 2228.33C.

Committee(s): JC-45.3

JESD21-C Solid State Memory Documents Main Page

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This standard defines the input, output specifications and ac test conditions for devices that are designed to operate narrow range 1.05 V CMOS level. Item 159.01

Committee(s): JC-16

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Designator: PDMA-N288-I0p85-R133p8x5p57Z31p8R2p55x0p6
Item: 11.14-197, Access STP Files for MO-329B
Cross Reference: SO-023, GS-010C

Patents(): Micron: 7,547,213.

Committee(s): JC-11.14

JEP95 Registrations Main Page

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This document defines the 3DS DDR4 SDRAM specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a compliant 8 Gbit through 128 Gbit for x4, x8 3DS DDR4 SDRAM devices. This addendum was created based on the JESD79-4 DDR4 SDRAM specification. Each aspect of the changes for 3DS DDR4 SDRAM operation was considered. Item 1727.58F

Committee(s): JC-42.3C

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This document is intended for use by GaN product suppliers and related power electronic industries. It provides guidelines for evaluating the switching reliability of GaN power switches and assuring their reliable use in power conversion applications. It is applicable to planar enhancement-mode, depletion-mode, GaN integrated power solutions and cascode GaN power switches.

Committee(s): JC-70.1

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This standard defines the specifications of interface parameters, signaling protocols, and features for DDR5 Serial Presence Detect EEPROM with Hub function (SPD5 Hub) and integrated Temperature Sensor (TS) as used for memory module applications. The Hub feature allows isolation of a local bus from a master host bus. The designations SPD5118 and SPD5108 refer to the families of devices specified by this document. The term SPD5 Hub refers generically to both devices in the family. Committee Item 1852.07F.

Committee(s): JC-42.4

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Designator: PBGA-B#[#]_I0p65...
Item: 11.11-970, Access STP File for MO-311E
Cross Reference: DR4.5

Committee(s): JC-11.11

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This standard establishes the requirements for timely notification to affected customers after a disaster has occurred at a supplier’s facility that will affect the committed delivery of product. This standard puts specific emphasis on notification, timing, and notification content which includes risk exposure, impact analysis, and recovery plans. This standard is applicable to suppliers of, and affected customers for, solid-state products and the constituent components used within.

Committee(s): JC-14.4

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This document defines the LPDDR4 standard, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this standard is to define the minimum set of requirements for a JEDEC compliant 16 bit per channel SDRAM device with either one or two channels. LPDDR4 dual channel device density ranges from 4 Gb through 32 Gb and single channel density ranges from 2 Gb through 16 Gb. This document was created using aspects of the following standards: DDR2 (JESD79-2), DDR3 (JESD79-3), DDR4 (JESD79-4), LPDDR (JESD209), LPDDR2 (JESD209-2) and LPDDR3 (JESD209-3). Committee Item: 1847.22

Committee(s): JC-42.6

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The HBM DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM DRAM uses a wide-interface architecture to achieve high-speed, low-power operation. The HBM DRAM uses differential clock CK_t/CK_c. Commands are registered at the rising edge of CK_t, CK_c. Each channel interface maintains a 128b data bus operating at DDR data rates. Also available for designer ease of use is HBM Ballout Spreadsheet. Committee item 1797.99K.

Committee(s): JC-42.3C

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This document defines the LPDDR5 standard, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a JEDEC compliant x16 one channel SDRAM device and x8 one channel SDRAM device. LPDDR5 device density ranges from 2 Gb through 32 Gb. This document was created using aspects of the following standards: DDR2 (JESD79-2), DDR3 (JESD79-3), DDR4 (JESD79-4), LPDDR (JESD209), LPDDR2 (JESD209-2), LPDDR3 (JESD209-3) and LPDDR4 (JESD209-4). Item 1854.99A

Committee(s): JC-42.6

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This standard describes a nondestructive test to assess solid state device mark legibility. The specification applies only to solid state devices that contain markings, regardless of the marking method. It does not define what devices must be marked or the method in which the device is marked, i.e., ink, laser, etc. The standard is limited in scope to the legibility requirements of solid state devices, and does not replace related reference documents listed in this standard.

Committee(s): JC-14.1

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This document defines the electrical and mechanical requirements for Raw Card B, 288-pin, 1.2 Volt (VDD), Registered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM RDIMMs). These DDR4 Registered DIMMs (RDIMMs) are intended for use as main memory when installed in PCs. Committee Item 2149.53.

Committee(s): JC-45.1

JESD21-C Solid State Memory Documents Main Page

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This specification defines the electrical and mechanical requirements for Raw Card E, 288-pin, 1.2 Volt (VDD), Registered, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM RDIMMs). These DDR4 Registered DIMMs (RDIMMs) are intended for use as main memory when installed in PCs. Committee Item 2149.52

Committee(s): JC-45.1

JESD21-C Solid State Memory Documents Main Page

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Designator: PDSO_N#[#]_I#-R#x#Z#-CturET0p04
Item: 11.11-974, Access STP Files for MO-340A
Cross Reference: DR4.8, DR4.16, DR4.20

Patents(): Nexperia BV: 8809121B2

Committee(s): JC-11.11

JEP95 Registrations Main Page

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