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Committee(s): JC-22.4

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The purpose of this standard is to promote the uniform use of abbreviations, terms, and definitions throughout the semiconductor industry. It is a useful guide for users, manufactures, educators, technical writers, and others interested in the characterization, nomenclature, and classification of semicustom integrated circuits.

Committee(s): JC-44

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This document defines the Low Power Double Data Rate (LPDDR) SDRAM 1.2 V I/O, including AC and DC operating conditions, extended mode register settings, and I-V characteristics. The purpose of this Standard is to define the minimum set of requirements for JEDEC compliant 64 Mb through 2 Gb for x16 and x32 Low Power Double Data Rate SDRAM devices with 1.2 V I/O. System designs based on the required aspects of this specification will be supported by all LPDDR SDRAM vendors providing compliant devices.

Committee(s): JC-42.6

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This purpose of the addendum is to add an optional 4-bit bus width (x4) to JESD251, xSPI standard. The xSPI interface currently supports a x1 interface that acts as a bridge to legacy SPI functionality as well as the x8 interface intended to achieve dramatically higher bus  performance than legacy SPI memory implementations. Item 1775.15. This is an editorial revision to JESD251-1, October 2018

Committee(s): JC-42.4

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JESD35-1 was rescinded by the committee in June 2024 and has been superseded by JESD263.

This addendum expands the usefulness of the Standard 35 (JESD35) by detailing the various sources of measurement error that could effect the test results obtained by the ramped tests described in JESD35. Each source of error is described and its implications on test structure design is noted. This addendum can be used as a guide when designing test structures for the qualification and characterization of thin oxide reliability, specifically, by implementing accelerated voltage or current ramp tests.

Committee(s): JC-14.2

This document defines the 3DS DDR4 SDRAM specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for a compliant 8 Gbit through 128 Gbit for x4, x8 3DS DDR4 SDRAM devices. This addendum was created based on the JESD79-4 DDR4 SDRAM specification. Each aspect of the changes for 3DS DDR4 SDRAM operation was considered. Item 1727.58G

Committee(s): JC-42.3C

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The normative information in this publication is intended to provide a technical design team to construct the interface on a FED and a BED such that they will operate correctly with each other (at the interface level), when designed to JESD96A.

Committee(s): JC-61

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Test method to measure the reverse recovery characteristics of the drain source diode of a power MOSFET.

Committee(s): JC-25

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This new standard provides specifications that will be used by several companies in new 1.5 V products designed in 0.12-0.15 um CMOS technologies, and in components that interface with them. The specifications allow limited interoperability with products using the existing JEDEC HSTL specification (JESD8-6). This version is a minor editorial revision as noted in Annex A.

Committee(s): JC-16

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This addendum establishes a method for measuring power device gate charge. A gate charge test is performed by driving the device gate with a constant current and measuring the resulting gate voltage response. Constant gate current scales the gate voltage, a function of time, to a function of coulombs. The slope of the generated response reflects the active device capacitance as it varies during the switching transition . Gate charge measurements are useful for characterizing the large signal switching performance of power MOS and IGBT devices. Developed over a four year span by the JEDEC JC-25 Committee, the method defines a repeatable means of measuring the widely published Qgd charge values.

Committee(s): JC-25

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The purpose of this addendum is to define the DDR3U specifications that supersede the DDR3 specifications in the JESD79-3. The use of DDR3-800, DDR3-1066, DDR3-1333, and DDR3-1600 titles in JESD79-3 are to be interpreted as DDR3U-800, DDR3U-1066, DDR3U-1333, and DDR3U-1600, respectively, when applying towards DDR3U definition; unless specifically stated otherwise. Item 1769.01

Committee(s): JC-42.3

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This standard defines a minimum set of macro cell standards for CMOS gate arrays. A total of 41 macro cell types are addressed, all of which are commonly used by gate array designers to implement Application Specific Integrated Circuits.

Committee(s): JC-44

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This addendum to JESD79-3 defines the 3DS DDR3 SDRAM specification, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this specification is to define the minimum set of requirements for compliant 8Gbit through 64Gbit x4 and x8 3DS DDR3 SDRAM devices. This document was created based on the E revision of the DDR standard (JESD79). Each aspect of the changes for 3DS DDR3 SDRAM operation was considered.

Committee(s): JC-42.3

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This standard defines how to specify various performance parameters of semicustom ICs, including cell and interconnect propagation delays, input/output levels and capacitance, and power dissipation.

Committee(s): JC-44

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This Addendum No. 4 to JEDEC Standard No. 8 defines the dc input and output specifications for a low-level, high-speed interface for integrated devices that can be a super-set of LVCMOS and LVTTL.

Committee(s): JC-16

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This method describes a means for testing the ability of a power switching device to withstand avalanche breakdown.

Committee(s): JC-25

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This standard defines logic interface levels for CMOS, TTL, ECL, and BiCC inputs and outputs. This standard is intended to provide an industry-wide set of specifications, for Application Specific Integrated Circuit (ASIC) signal inputs and outputs, both necessary and sufficient to define a circuits electrical interfacing with the external environment. JESD12-6 is intended to provide the ASIC manufacturer and user with a common set of signal interface levels. The standard defines interface levels for 5 volt operation.

Committee(s): JC-44

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This standard is a 1.5 volt high performance CMOS-based interface document suitable for high I/O count CMOS and BiCMOS devices operating at frequencies in excess of 200 Mhz.

Committee(s): JC-16

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This standard continues the voltage specification migration to the next level beyond the 2.5 V specification already established. Since this migration is driven by both process changes and performance/power, more entries can be expected in supporting required voltage levels. The rapidity of this evolution is expecting to increase because of the same feature sizes expected.

Committee(s): JC-16

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