Global Standards for the Microelectronics Industry
Standards & Documents Search
Title | Document # | Date |
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Registration - DDR4 DIMM PTH 288 Pin Socket Outline, 0.85 mm Pitch. SKT |
SO-016C.01 | Apr 2016 |
Item No. 14-181(E) Free download. Registration or login required. |
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UNIVERSAL FLASH STORAGE (UFS) UNIFIED MEMORY EXTENSION, Version 1.1 |
JESD220-1A | Mar 2016 |
This UFS Unified Memory Support Extension standard is an extension to the UFS standard, JESD220, This standard defines a managed storage device. UFS devices are designed to offer a high performance with low power consumption. The UFS device contains features that support both high throughput for large data transfers and performance for small random data accesses. This standard describes the requirements to implement unified memory functionality in an UFS device. Unified Memory Support is not mandatory but optional. Item 133.11 Patents(): A complete list of Assurance/Disclosure Forms is available to JEDEC members in the Members Area. Non-members can obtain individual Assurance/Disclosure Forms on request from the JEDEC office. Committee(s): JC-64.1 Free download. Registration or login required. |
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UNIVERSAL FLASH STORAGE HOST CONTROLLER INTERFACE (UFSHCI), Version 2.1Status: Supersededby JESD223D, January 2018 |
JESD223C | Mar 2016 |
This document has been superseded by JESD223D, January 2018, however is available for reference only. Committee(s): JC-64.1 Free download. Registration or login required. |
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Universal Flash Storage (UFS), Version 2.1Status: Superseded August 2020 |
JESD220C-2.1 | Mar 2016 |
This document has been superseded by JESD220C-2.2, August 2020, and is provided here for reference purposes only. This standard specifies the characteristics of the UFS electrical interface and the memory device. Such characteristics include (among others) low power consumption, high data throughput, low electromagnetic interference and optimization for mass memory subsystem efficiency. The UFS electrical interface is based on an advanced differential interface by MIPI M-PHY specification which together with the MIPI UniPro specification forms the interconnect of the UFS interface. The architectural model is referencing the INCITS T10 (SCSI) SAM standard and the command protocol is based on INCITS T10 (SCSI) SPC and SBC standards. Item 133.00B Committee(s): JC-64.1 Free download. Registration or login required. |
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Annex J, Raw Card J, in 288-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM Registered DIMM Design SpecificationRelease Number: 26 |
MODULE4.20.28.J | Feb 2016 |
Item 2241.16 Committee(s): JC-45.1 JESD21-C Solid State Memory Documents Main Page Free download. Registration or login required. |
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Registration - 6 Lead Surface Mount Power Package with Fused Leads. H-PSOF |
MO-319A | Feb 2016 |
Item No. 11-912 Patents(): Infineon Technologies AG: 2011012439 A1 (US), 10 2010 060 801 A1 (DE) Committee(s): JC-11.11 Free download. Registration or login required. |
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PROCEDURE FOR WAFER-LEVEL DC CHARACTERIZATION OF BIAS TEMPERATURE INSTABILITIESStatus: Reaffirmed September 2021 |
JESD241 | Dec 2015 |
This Bias Temperature Instability (BTI) stress/test procedure is proposed to provide a minimum recommendation for a simple and consistent comparison of the mean threshold voltage (Vth) BTI induced shift. The procedure enables comparison of stable and manufacturable CMOS processes and technologies in which the process variation is low and the yield is mature. Qualification and accept-reject criteria are not given in this document. Committee(s): JC-14.2 Free download. Registration or login required. |
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Design Requirements - Micropillar Grid Array (MPGA) |
DR-4.26B | Nov 2015 |
Item 11.2-845(R) Free download. Registration or login required. |
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Annex M: Serial Presence Detect (SPD) for LPDDR3 and LPDDR4 SDRAM Modules, Release 1Release Number: 25 |
SPD4.1.2.M-1 | Nov 2015 |
Committee Document Reference Title: LPDDR3 and LPDDR4 SPD Document Release 1 This Annex describes the serial presence detect (SPD) values for all LPDDR modules. Differences between module types are encapsulated in subsections of this annex. These presence detect values are those referenced in the SPD standard document for ‘Specific Features’. The following SPD fields will be documented in the order presented in Section 2, with the exception of bytes 128~255 which are documented in separate sections, one for each family of module types. Further description of Byte 2 is found in Annex A of the SPD standard. Item 2254.01 Committee(s): JC-45 JESD21-C Solid State Memory Documents Main Page Free download. Registration or login required. |
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Registration - DDR4 Small Outline Dual Inline Memory Module (SODIMM), 260 pin, 0.50 mm pitch Socket Outline |
SO-018D | Oct 2015 |
Item No. 14-180 Patents(): Foxconn: 5,882,211; 6,126,472; 6,113,398 Free download. Registration or login required. |
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LOW TEMPERATURE STORAGE LIFEStatus: Reaffirmed May 2021 |
JESD22-A119A | Oct 2015 |
The test is applicable for evaluation, screening, monitoring, and/or qualification of all solid state devices Low Temperature storage test is typically used to determine the effect of time and temperature, under storage conditions, for thermally activated failure mechanisms of solid state electronic devices, including nonvolatile memory devices (data retention failure mechanisms). During the test reduced temperatures (test conditions) are used without electrical stress applied. This test may be destructive, depending on Time, Temperature and Packaging (if any). Committee(s): JC-14.1 Free download. Registration or login required. |
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APPLICATION SPECIFIC QUALIFICATION USING KNOWLEDGE BASED TEST METHODOLOGYStatus: Reaffirmed January 2021 |
JESD94B | Oct 2015 |
The method described in this document applies to all application specific reliability testing for solid state components with known failure mechanisms where the test duration and conditions vary based on application variables. This document does not cover reliability tests that are characterization based or essentially go / no-go type tests, for example, ESD, latch-up, or electrical over stress. Also, it does not attempt to cover every failure mechanism or test environment, but does provide a methodology that can be extended to other failure mechanisms and test environments. Committee(s): JC-14.3 Free download. Registration or login required. |
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SPD Annex L: Serial Presence Detect (SPD) for DDR4 SDRAM Modules, Release 3Release Number: 25 |
SPD4.1.2.L-3 | Sep 2015 |
This annex describes the serial presence detect (SPD) values for all DDR4 modules. Differences between module types are encapsulated in subsections of this annex. These presence detect values are those referenced in the SPD standard document for ‘Specific Features’. The following SPD fields will be documented in the order presented in section 1.1 with the exception of bytes 128~255 which are documented in separate annexes, one for each family of module types. Further description of Byte 2 is found in Annex A of the SPD standard. Item 2220.01F. Committee(s): JC-45 JESD21-C Solid State Memory Documents Main Page Free download. Registration or login required. |
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LOW POWER DOUBLE DATA RATE 3 SDRAM (LPDDR3) |
JESD209-3C | Aug 2015 |
This document defines the LPDDR3 Standard, including features, functionalities, AC and DC characteristics, packages, and ball/signal assignments. The purpose of this standard is to define the minimum set of requirements for JEDEC compliant 4 Gb through 32 Gb for x16 and x32 SDRAM devices. This document was created using aspects of the following standards: DDR2 (JESD79-2), DDR3 (JESD79-3), LPDDR (JESD209), and LPDDR2 (JESD209-2). Committee Item no. 1798.11D. Patents(): A complete list of Assurance/Disclosure Forms is available to JEDEC members in the Members Area. Non-members can obtain individual Assurance/Disclosure Forms on request from the JEDEC office. Committee(s): JC-42.6 Available for purchase: $208.00 Add to Cart Paying JEDEC Members may login for free access. |
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288-Pin, 1.2 V (VDD), PC4-1600/PC4-1866/PC4-2133/PC4-2400/PC4-2666/PC4-3200 DDR4 SDRAM Load Reduced DIMM Design SpecificationRelease Number: 25 |
MODULE4.20.27 | Aug 2015 |
Item 2204.07 This specification defines the electrical and mechanical requirements for 288-pin, 1.2 Volt (VDD), Load Reduced, Double Data Rate, Synchronous DRAM Dual In-Line Memory Modules (DDR4 SDRAM LRDIMMs). These DDR4 Load Reduced DIMMs (LRDIMMs) are intended for use as main memory when installed in PCs. Committee(s): JC-45.4 JESD21-C Solid State Memory Documents Main Page Free download. Registration or login required. |
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ACCELERATED MOISTURE RESISTANCE - UNBIASED AUTOCLAVEStatus: Reaffirmed January 2021 |
JESD22-A102E | Jul 2015 |
This test allows the user to evaluate the moisture resistance of nonhermetic packaged solid state devices. The Unbiased Autoclave Test is performed to evaluate the moisture resistance integrity of non-hermetic packaged solid state devices using moisture condensing or moisture saturated steam environments. It is a highly accelerated test that employs conditions of pressure, humidity and temperature under condensing conditions to accelerate moisture penetration through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors passing through it. This test is used to identify failure mechanisms internal to the package and is destructive. Committee(s): JC-14.1 Free download. Registration or login required. |
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DISCONTINUING USE OF THE MACHINE MODEL FOR DEVICE ESD QUALIFICATIONStatus: Reaffirmed September 2020 |
JEP172A | Jul 2015 |
Over the last several decades the so called "machine model" (aka MM) and its application to the required ESD component qualification has been grossly misunderstood. The scope of this JEDEC document is to present evidence to discontinue use of this particular model stress test without incurring any reduction in the IC component's ESD reliability for manufacturing. In this regard, the document's purpose is to provide the necessary technical arguments for strongly recommending no further use of this model for IC qualification. The published document should be used as a reference to propagate this message throughout the industry. Committee(s): JC-14.3 Free download. Registration or login required. |
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Performance Standard - DDR4 288 Pin U/R/LR DIMM Connector Performance Standard |
PS-002A | Jul 2015 |
This standard defines the form, fit and function of DDR4 connectors for U/R/LR modules supporting channels with transfer rates as high as 3.2 GT/S. It contains mechanical, electrical and reliability requirements for a one-piece connector mated to a module with nominal thickness of 1.40 mm. The intent of this document is to provide Performance Standards to enable connector, system designers and manufacturers to build, qualify and use the DDR4 connectors in client and server platforms. Committee(s): JC-11.14 Free download. Registration or login required. |
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PROCEDURE FOR THE EVALUATION OF LOW-k/METAL INTER/INTRA-LEVEL DIELECTRIC INTEGRITY |
JEP159A | Jul 2015 |
This document is intended for use in the semiconductor IC manufacturing industry and provides reliability characterization techniques for low-k inter/intra level dielectrics (ILD) for the evaluation and control of ILD processes. It describes procedures developed for estimating the general integrity of back end-of-line (BEOL) ILD. Two basic test procedures are described, the Voltage-Ramp Dielectric Breakdown (VRDB) test, and the Constant Voltage Time-Dependent Dielectric Breakdown stress (CVS). Each test is designed for different reliability and process evaluation purposes. This document also describes robust techniques to detect breakdown and TDDB data analysis. Free download. Registration or login required. |
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300 mV INTERFACE |
JESD8-28 | Jun 2015 |
This standard is to define and interface with a CMOS rail to rail signal that uses a 300 mV signal swing. This specification defines the maximum signaling rate, the signal Committee(s): JC-16 Free download. Registration or login required. |