Global Standards for the Microelectronics Industry
Standards & Documents Search
| Title | Document # |
Date |
|---|---|---|
Test Procedure for the Measurement of Terrestrial Cosmic Ray Induced Destructive Effects in Power Semiconductor Devices |
JEP151A | Jan 2022 |
This test method defines the requirements and procedures for terrestrial destructive* single-event effects (SEE) for example, single-event breakdown (SEB), single-event latch-up (SEL) and single-event gate rupture (SEGR) testing . It is valid when using an accelerator, generating a nucleon beam of either; 1) Mono-energetic protons or mono-energetic neutrons of at least 150 MeV energy, or 2) Neutrons from a spallation spectrum with maximum energy of at least 150 MeV. This test method does not apply to testing that uses beams with particles heavier than protons. *This test method addresses a separate risk than does JESD89 tests for non-destructive SEE due to cosmic radiation effects on terrestrial applications.
Committee(s): JC-14.1 Free download. Registration or login required. |
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DDR5 Buffer Definition (DDR5DB01) - Rev. 1.1 |
JESD82-521 | Dec 2021 |
This standard defines standard specifications for features and functionality, DC & AC interface parameters and test loading for definition of the DDR5 data buffer for driving DQ and DQS nets on DDR5 LRDIMM applications. The purpose is to provide a standard for the DDR5DB01 (see Note) logic device, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. Item 323.98K Committee(s): JC-40.4 Free download. Registration or login required. |
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Backup Energy Module Standard for NVDIMM Memory Devices (BEM) |
JESD315 | Dec 2021 |
This standard defines the functional requirements of Backup Energy Module (BEM), henceforth referred to as BEM in this standard. This module shall be used to provide backup power to the Industry Defined Storage Array Controller Cards and NVDIMM-n as applicable. All standards are applicable under all operating conditions unless otherwise stated. Item 2279.03 Committee(s): JC-45 Free download. Registration or login required. |
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Guidelines for Representing Switching Losses of SIC MOSFETs in Datasheets |
JEP187 | Dec 2021 |
This document describes the impact of measurement and/or setup parameters on switching losses of power semiconductor switches; focusing primarily on SiC MOSFET turn-on losses. In terms of turn-off losses, the behavior of SiC MOSFETs is similar to that of existing silicon based power MOSFETs, and as such are adequately represented in typical datasheets. Committee(s): JC-70.2 Free download. Registration or login required. |
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Guideline to Specify a Transient Off-State Withstand Voltage Robustness Indicator in Datasheets for Lateral GaN Power Conversion Devices, Version 1.0 |
JEP186 | Dec 2021 |
This guideline describes different techniques for specifying a Transient Off-state Withstand Voltage Robustness Indicator in datasheets for lateral GaN power conversion devices. This guideline does not convey preferences for any of the specification types presented, nor does the guideline address formatting of datasheets. This guideline does not indicate nor require that the datasheet parameters are used in production tests, nor specify how the values were obtained. Committee(s): JC-70.1 Free download. Registration or login required. |
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Serial Interface for Data Converters |
JESD204C.1 | Dec 2021 |
This standard describes a serialized interface between data converters and logic devices. It contains normative information to enable designers to implement devices that communicate with other devices covered by this specification. Informative annexes are included to clarify and exemplify the document. Free download. Registration or login required. |
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Registration - Plastic Bottom Grid Array Ball, 0.35 mm x 0.40 mm Pitch Rectangular Family Package |
MO-350A | Nov 2021 |
Designator: PBGA-B#[#]_I0p35... Item 11-998 Committee(s): JC-11.11 Free download. Registration or login required. |
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SEMICONDUCTOR WAFER AND DIE BACKSIDE EXTERNAL VISUAL INSPECTION |
JESD22-B118A | Nov 2021 |
This inspection method is for product semiconductor wafers and dice prior to assembly. This test method defines the requirements to execute a standardized external visual inspection and is a non-invasive and nondestructive examination that can be used for qualification, quality monitoring, and lot acceptance. Committee(s): JC-14.1 Free download. Registration or login required. |
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DEFINITION OF THE SSTUA32S865 AND SSTUA32D865 28-BIT 1:2 REGISTERED BUFFER WITH PARITY FOR DDR2 RDIMM APPLICATIONS |
JESD82-19A.01 | Oct 2021 |
This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTUA32S865 and SSTUA32D865 registered buffer with parity for 2 rank by 4 or similar high-density DDR2 RDIMM applications. This is a minor editor revision as shown in Annex A of the document. Committee(s): JC-40 Free download. Registration or login required. |
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DEFINITION OF THE SSTU32866 1.8 V CONFIGURABLE REGISTERED BUFFER WITH PARITY FOR DDR2 RDIMM APPLICATIONS |
JESD82-10A.01 | Oct 2021 |
This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTU32866 registered buffer with parity test for DDR2 RDIMM applications. The purpose is to provide a standard for the SSTU32866 (see Note) logic device, for uniformity, multiplicity of sources, elimination of confusion, ease of device specification, and ease of use. This is a minor editorial revision as shown in Annex A of the document. Free download. Registration or login required. |
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