Global Standards for the Microelectronics Industry
Standards & Documents Search
Displaying 1 - 2 of 2 documents.
Title | Document # | Date |
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POWER MOSFET ELECTRICAL DOSE RATE TEST METHOD:Status: ReaffirmedApril 1999 |
JEP115 | Aug 1989 |
The purpose of this Test Method is to establish electrical criteria for comparing and specifying power MOSFET performance under high dose rate radiation. Committee(s): JC-25 Free download. Registration or login required. |
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THE MEASUREMENT OF TRANSISTOR EQUIVALENT NOISE VOLTAGE AND EQUIVALENT NOISE CURRENT AT FREQUENCIES OF UP TO 20 kHzStatus: Reaffirmed April 1981, April 1999, March 2009 |
JESD354 | Apr 1968 |
This standard provides a method for determining values, for device registration purposes, for transistor equivalent noise voltage and equivalent noise current at frequencies up to 20 kHz. This method is applicable to transistors whose noise has a Gaussian, flat (white) or I/f power distribution. Formerly known as RS-354 and/or EIA-354 Committee(s): JC-25 Free download. Registration or login required. |