Standards & Documents Search

Displaying 1 - 2 of 2 documents.

Title	Document #	Date
GUIDELINE FOR CONSTANT TEMPERATURE AGING TO CHARACTERIZE ALUMINUM INTERCONNECT METALLIZATIONS FOR STRESS-INDUCED VOIDING: Status: ReaffirmedOctober 2012	JEP139	Dec 2000
This document describes a constant temperature (isothermal) aging method for testing aluminum (Al) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding. This method is valid for metallization/dielectric systems in which the dielectric is deposited onto the metallization at a temperature considerably above the intended use temperature, and above or equal to the deposition temperature of the metal. Although this is a wafer test, it is not a fast (less than 5 minutes per probe) test. It is intended to be used for lifetime prediction and failure analysis, not for production Go-NoGo lot checking. Committee(s): JC-14.2 Free download. Registration or login required.
CONSTANT-TEMPERATURE AGING METHOD TO CHARACTERIZE COPPER INTERCONNECT METALLIZATIONS FOR STRESS-INDUCED VOIDING	JESD214.01	Aug 2017
This document describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method may be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time. Committee(s): JC-14.2 Free download. Registration or login required.