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Title Document # Date

Guideline for Gate Oxide Reliability and Robustness Evaluation Procedures for Silicon Carbide Power MOSFETs

 JEP194 Feb 2023

This document provides guidelines for evaluating gate reliability and lifetime testing for silicon carbide (SiC) based power devices with a gate oxide or gate dielectric.

Committee(s): JC-70, JC-70.2

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Guideline for Evaluating Gate Switching Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion

 JEP195 Feb 2023

This document elaborates on the information given in JEP184 regarding the long-time stability of device parameters under static conditions and under application near switching conditions.

Committee(s): JC-70, JC-70.2

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