Global Standards for the Microelectronics Industry
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Displaying 1 - 2 of 2 documents.
| Title | Document # | Date |
|---|---|---|
A PROCEDURE FOR MEASURING P-CHANNEL MOSFET NEGATIVE BIAS TEMPERATURE INSTABILITIESStatus: Rescinded September 2021 (JC-14.2-21-183) |
JESD90 | Nov 2004 |
This document hasbeen replaced by JESD241, September 2021. |
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GUIDELINE FOR EVALUATING BIAS TEMPERATURE INSTABILITY OF SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR DEVICES FOR POWER ELECTRONIC CONVERSION |
JEP184 | Mar 2021 |
The scope of this document covers SiC-based PECS devices having a gate dielectric region biased to turn devices on and off. This typically refers to MOS devices such as MOSFETs and IGBTs. In this document, only NMOS devices are discussed as these are dominant for power device applications; however, the procedures apply to PMOS devices as well. Committee(s): JC-70.2 Free download. Registration or login required. |
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