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Title	Document #	Date
Test Procedure for the Measurement of Terrestrial Cosmic Ray Induced Destructive Effects in Power Semiconductor Devices	JEP151A	Jan 2022
This test method defines the requirements and procedures for terrestrial destructive* single-event effects (SEE) for example, single-event breakdown (SEB), single-event latch-up (SEL) and single-event gate rupture (SEGR) testing . It is valid when using an accelerator, generating a nucleon beam of either; 1) Mono-energetic protons or mono-energetic neutrons of at least 150 MeV energy, or 2) Neutrons from a spallation spectrum with maximum energy of at least 150 MeV. This test method does not apply to testing that uses beams with particles heavier than protons. *This test method addresses a separate risk than does JESD89 tests for non-destructive SEE due to cosmic radiation effects on terrestrial applications. Committee(s): JC-14.1 Free download. Registration or login required.
JC-42.6 MANUFACTURER IDENTIFICATION (ID) CODE FOR LOW POWER MEMORIES	JEP166E	Jul 2023
This document defines the JC-42.6 Manufacturer ID. This document covers Manufacturer ID Codes for the following technologies: LPDDR (JESD209), LPDDR2 (JESD209-2), LPDDR3 (JESD209-3), LPDDR4 (JESD209-4), Wide-IO (JESD229), and Wide-IO2 (JESD229-2). The purpose of this document is to define the Manufacturer ID for these devices. Item No. 1725.03C. See Annex for additions/changes. To make a request for an ID code: https://www.jedec.org/id-codes-low-power-memories Committee(s): JC-42.6 Free download. Registration or login required.
JEP95 Registrations Main Page	JEP95 Index	Apr 2001
This page will provide a link to the Master Index for JEP95. It also provides a link to 'index by device type' as well as the table of contents for each section within JEP95. For older outlines that have been archived, they can be accessed through this page. Committee(s): JC-11 JEP95 Registrations Main Page See JEP95 Index information
SYSTEM LEVEL ESD PART 1: COMMON MISCONCEPTIONS AND RECOMMENDED BASIC APPROACHES Status: ReaffirmedApril 2023	JEP161	Jan 2011
This report is the first part of a two part document. Part I will primarily address hard failures characterized by physical damage to a system (failure category d as classified by IEC 61000-4-2). Soft failures, in which the system’s operation is upset without physical damage, are also critical and predominant in many cases. Committee(s): JC-14, JC-14.3 Free download. Registration or login required.
UNDERSTANDING ELECTRICAL OVERSTRESS - EOS Status: Reaffirmed May 2022	JEP174	Sep 2016
This purpose of this white paper will be to introduce a new perspective about EOS to the electronics industry. As failures exhibiting EOS damage are commonly experienced in the industry, and these severe overstress events are a factor in the damage of many products, the intent of the white paper is to clarify what EOS really is and how it can be mitigated once it is properly comprehended. Committee(s): JC-14.3 Free download. Registration or login required.
STANDARD MANUFACTURERS IDENTIFICATION CODE	JEP106BK	Sep 2024
The manufacturers identification code is defined by one or more 8 bit fields, each consisting of 7 data bits plus 1 odd parity bit. The manufacturers identification code is assigned, maintained and updated by the JEDEC Office. The intent of this identification code is that it may be used whenever a digital field is required, e.g., hardware, software, documentation, etc. To make a request for an ID Code please go to https://www.jedec.org/standards-documents/id-codes-order-form Committee(s): JC-42, JC-42.3 Free download. Registration or login required.
FAILURE MECHANISMS AND MODELS FOR SEMICONDUCTOR DEVICES	JEP122H	Sep 2016
This publication provides a list of failure mechanisms and their associated activation energies or acceleration factors that may be used in making system failure rate estimations when the only available data is based on tests performed at accelerated stress test conditions. The method to be used is the Sum-of-the-Failure-Rates method. This publication also provides guidance in the selection of reliability modeling parameters, namely functional form, apparent thermal activation energy values and sensitivity to stresses such as power supply voltage, substrate current, current density, gate voltage, relative humidity, temperature cycling range, mobile ion concentration, etc. Committee(s): JC-14.2 Available for purchase: $163.00 Add to Cart To help cover the costs of producing standards, JEDEC is now charging for non-member access to selected standards and design files. Most of the content on this site remains free to download with registration. Paying JEDEC member companies enjoy free access to all content. Learn more and apply today. Paying JEDEC Members may login for free access.
DISCONTINUING USE OF THE MACHINE MODEL FOR DEVICE ESD QUALIFICATION Status: Reaffirmed September 2020	JEP172A	Jul 2015
Over the last several decades the so called "machine model" (aka MM) and its application to the required ESD component qualification has been grossly misunderstood. The scope of this JEDEC document is to present evidence to discontinue use of this particular model stress test without incurring any reduction in the IC component's ESD reliability for manufacturing. In this regard, the document's purpose is to provide the necessary technical arguments for strongly recommending no further use of this model for IC qualification. The published document should be used as a reference to propagate this message throughout the industry. Committee(s): JC-14.3 Free download. Registration or login required.
DDR4 PROTOCOL CHECKS	JEP175	Jul 2017
The intended use of this document is for the validation and debug of DDR4 based designs. This document contains protocol checks, sometimes referred to as memory access rules or protocol violations. This document contains a list of checks that can be used during the verification or debug stages of development to check that accesses to a DDR4 DRAM adhere to JESD79-4B. These checks are derived from JESD79-4B. Item 31509. Committee(s): JC-40.5 Free download. Registration or login required.
ADAPTER TEST BOARD RELIABILITY TEST GUIDELINES	JEP176	Jan 2018
This publication describes guidelines for applying JEDEC reliability tests and recommended testing procedures to integrated circuits that require adapter test boards for electrical and reliability testing. These tests are used frequently in qualifying integrated circuits as a new product, a product family, or as products in a process which is being changed. Committee(s): JC-14.3 Free download. Registration or login required.
FOUNDRY PROCESS QUALIFICATION GUIDELINES - FRONT END TRANSISTOR LEVEL (Wafer Fabrication Manufacturing Sites)	JEP001-2A	Sep 2018
This document describes transistor-level test and data methods for the qualification of semiconductor technologies. It does not give pass or fail values or recommend specific test equipment, test structures or test algorithms. Wherever possible, it references applicable JEDEC such as JESD47 or other widely accepted standards for requirements documentation. Committee(s): JC-14.2 Free download. Registration or login required.
Foundry Process Qualification Guidelines – Technology Qualification Vehicle Testing (Wafer Fabrication Manufacturing Sites)	JEP001-3B	Sep 2024
The publication provides methodologies for measurements to qualify a new semiconductor wafer process. Committee(s): JC-14, JC-14.2 Free download. Registration or login required.
DYNAMIC ON-RESISTANCE TEST METHOD GUIDELINES FOR GaN HEMT BASED POWER CONVERSION DEVICES, VERSION 1.0	JEP173	Jan 2019
This document is intended for use in the GaN power semiconductor and related power electronic industries, and provides guidelines for measuring the dynamic ON-resistance of GaN power devices. Committee(s): JC-70.1 Free download. Registration or login required.
GUIDELINE FOR SWITCHING RELIABILITY EVALUATION PROCEDURES FOR GALLIUM NITRIDE POWER CONVERSION DEVICES	JEP180.01	Jan 2021
This document is intended for use by GaN product suppliers and related power electronic industries. It provides guidelines for evaluating the switching reliability of GaN power switches and assuring their reliable use in power conversion applications. It is applicable to planar enhancement-mode, depletion-mode, GaN integrated power solutions and cascode GaN power switches. Committee(s): JC-70.1 Free download. Registration or login required.
ECXML Guidelines for Electronic Thermal System Level Models – XML Requirements	JEP181A	Nov 2023
This publication establishes the requirements for the exchange of electronic thermal system level simulation models between supplier and end user in a single neutral file format. Committee(s): JC-15 Free download. Registration or login required.
TEST METHOD FOR CONTINUOUS-SWITCHING EVALUATION OF GALLIUM NITRIDE POWER CONVERSION DEVICES	JEP182	Jan 2021
This document is intended for use in the GaN power semiconductor and related power electronic industries and provides guidelines for test methods and circuits to be used for continuous-switching tests of GaN power conversion devices. Committee(s): JC-70.1 Free download. Registration or login required.
Guidelines for Measuring the Threshold Voltage (VT) of SiC MOSFETs	JEP183A	Jan 2023
This publication describes the guidelines for VT measurement methods and conditioning prior to VT testing in SiC power MOSFETs to reduce or eliminate the effect of the aforementioned hysteresis. Committee(s): JC-70.1 Free download. Registration or login required.
NEAR-TERM DRAM LEVEL ROWHAMMER MITIGATION	JEP300-1	Mar 2021
RAM process node transistor scaling for power and DRAM capacity has made DRAM cells more sensitive to disturbances or transient faults. This sensitivity becomes much worse if external stresses are applied in a meticulously manipulated sequence, such as Rowhammer. Rowhammer related papers have been written outside of JEDEC, but some assumptions used in those papers didn’t explain the problem very clearly or correctly, so the perception for this matter is not precisely understood within the industry. This publication defines the problem and recommends following mitigations to address such concerns across the DRAM industry or academia. Item 1866.01. Committee(s): JC-42 Free download. Registration or login required.
SYSTEM LEVEL ROWHAMMER MITIGATION	JEP301-1	Mar 2021
A DRAM rowhammer security exploit is a serious threat to cloud service providers, data centers, laptops, smart phones, self-driving cars and IoT devices. Hardware research and development will take time. DRAM components, DRAM DIMMs, System-on-chip (SoC), chipsets and system products have their own design cycle time and overall life time. This publication recommends best practices to mitigate the security risks from rowhammer attacks. Item 1866.02. Committee(s): JC-42 Free download. Registration or login required.
GUIDELINE FOR EVALUATING BIAS TEMPERATURE INSTABILITY OF SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR DEVICES FOR POWER ELECTRONIC CONVERSION	JEP184	Mar 2021
The scope of this document covers SiC-based PECS devices having a gate dielectric region biased to turn devices on and off. This typically refers to MOS devices such as MOSFETs and IGBTs. In this document, only NMOS devices are discussed as these are dominant for power device applications; however, the procedures apply to PMOS devices as well. Committee(s): JC-70.2 Free download. Registration or login required.

Standards & Documents Search

Test Procedure for the Measurement of Terrestrial Cosmic Ray Induced Destructive Effects in Power Semiconductor Devices

JC-42.6 MANUFACTURER IDENTIFICATION (ID) CODE FOR LOW POWER MEMORIES

JEP95 Registrations Main Page

SYSTEM LEVEL ESD PART 1: COMMON MISCONCEPTIONS AND RECOMMENDED BASIC APPROACHES

UNDERSTANDING ELECTRICAL OVERSTRESS - EOS

STANDARD MANUFACTURERS IDENTIFICATION CODE

FAILURE MECHANISMS AND MODELS FOR SEMICONDUCTOR DEVICES

DISCONTINUING USE OF THE MACHINE MODEL FOR DEVICE ESD QUALIFICATION

DDR4 PROTOCOL CHECKS

ADAPTER TEST BOARD RELIABILITY TEST GUIDELINES

FOUNDRY PROCESS QUALIFICATION GUIDELINES - FRONT END TRANSISTOR LEVEL (Wafer Fabrication Manufacturing Sites)

Foundry Process Qualification Guidelines – Technology Qualification Vehicle Testing (Wafer Fabrication Manufacturing Sites)

DYNAMIC ON-RESISTANCE TEST METHOD GUIDELINES FOR GaN HEMT BASED POWER CONVERSION DEVICES, VERSION 1.0

GUIDELINE FOR SWITCHING RELIABILITY EVALUATION PROCEDURES FOR GALLIUM NITRIDE POWER CONVERSION DEVICES

ECXML Guidelines for Electronic Thermal System Level Models – XML Requirements

TEST METHOD FOR CONTINUOUS-SWITCHING EVALUATION OF GALLIUM NITRIDE POWER CONVERSION DEVICES

Guidelines for Measuring the Threshold Voltage (VT) of SiC MOSFETs

NEAR-TERM DRAM LEVEL ROWHAMMER MITIGATION

SYSTEM LEVEL ROWHAMMER MITIGATION

GUIDELINE FOR EVALUATING BIAS TEMPERATURE INSTABILITY OF SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR DEVICES FOR POWER ELECTRONIC CONVERSION

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