Global Standards for the Microelectronics Industry
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Displaying 1 - 2 of 2 documents.
| Title | Document # | Date |
|---|---|---|
A PROCEDURE FOR MEASURING P-CHANNEL MOSFET HOT-CARRIER-INDUCED DEGRADATION AT MAXIMUM GATE CURRENT UNDER DC STRESS: |
JESD60A | Sep 2004 |
This method establishes a standard procedure for accelerated testing of the hot-carrier-induced change of a p-channel MOSFET. The objective is to provide a minimum set of measurements so that accurate comparisons can be made between different technologies. The measurements specified should be viewed as a starting pint in the characterization and benchmarking of the trasistor manufacturing process. Committee(s): JC-14.2 Free download. Registration or login required. |
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Addendum No. 1 to JESD28, N-CHANNEL MOSFET HOT CARRIER DATA ANALYSIS |
JESD28-1 | Sep 2001 |
This addendum provides data analysis examples useful in analyzing MOSFET n-channel hot-carrier-induced degradation data. This addendum to JESD28 (Hot carrier n-channel testing standard) suggests hot-carrier data analysis techniques. Committee(s): JC-14.2 Free download. Registration or login required. |
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