Standards & Documents Search

Displaying 1 - 2 of 2 documents.

Title	Document #	Date
GUIDELINES FOR THE MEASUREMENT OF THERMAL RESISTANCE OF GaAs FETS:	JEP110	Jul 1988
This publication is intended for power GaAs FET applications requiring high reliability. An accurate measurement of thermal resistance is extremely important to provide the user with knowledge of the FETs operating temperature so that more accurate life estimates can be made. FET failure mechanisms and failure rates have, in general, an exponential dependence on temperature (which is why temperature-accelerated testing is successful). Because of the exponential relationship of failure rate with temperature, the thermal resistance should be referenced to the hottest part of the FET. Committee(s): JC-14.7 Free download. Registration or login required.
GUIDELINES FOR GaAs MMIC PHEMT/MESFET AND HBT RELIABILITY ACCELERATED LIFE TESTING	JEP118A	Dec 2018
These guidelines apply to GaAs Monolithic Microwave Integrated Circuits (MMICs) and their individual component building blocks, such as GaAs Metal-Semiconductor Field Effect Transistors (MESFETs), Pseudomorphic High Electron Mobility Transistors (PHEMTs), Heterojunction Bipolar Transistors (HBTs), resistors, and capacitors. While the procedure described in this document may be applied to other semiconductor technologies, especially those used in RF and microwave frequency analog applications, it is primarily intended for technologies based on GaAs and related III-V material systems (InP, AlGaAs, InGaAs, InGaP, GaN, etc). Committee(s): JC-14.7 Free download. Registration or login required.