Global Standards for the Microelectronics Industry
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Displaying 1 - 2 of 2 documents.
Title | Document # | Date |
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METHOD FOR DEVELOPING ACCELERATION MODELS FOR ELECTRONIC DEVICE FAILURE MECHANISMS |
JESD91B | Mar 2022 |
The method described in this document applies to all reliability mechanisms associated with electronic devices. The purpose of this standard is to provide a reference for developing acceleration models for defect-related and wear-out mechanisms in electronic devices. Committee(s): JC-14.3 Free download. Registration or login required. |
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FAILURE MECHANISMS AND MODELS FOR SEMICONDUCTOR DEVICES |
JEP122H | Sep 2016 |
This publication provides a list of failure mechanisms and their associated activation energies or acceleration factors that may be used in making system failure rate estimations when the only available data is based on tests performed at accelerated stress test conditions. The method to be used is the Sum-of-the-Failure-Rates method. This publication also provides guidance in the selection of reliability modeling parameters, namely functional form, apparent thermal activation energy values and sensitivity to stresses such as power supply voltage, substrate current, current density, gate voltage, relative humidity, temperature cycling range, mobile ion concentration, etc. Committee(s): JC-14.2 Available for purchase: $163.00 Add to Cart Paying JEDEC Members may login for free access. |