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Title	Document #	Date
ISOTHERMAL ELECTROMIGRATION TEST PROCEDURE: Status: Reaffirmed September 2018	JESD61A.01	Oct 2007
This standard describes an algorithm for the execution of the isothermal test, using computer-controlled instrumentation. The primary use of this test is for the monitoring of microelectronic metallization lines at wafer level (1) in process development, to evaluate process options, (2) in manufacturing, to monitor metallization reliability and (3) to monitor/evaluate process equipment. While it is developed as a fast WLR test, it can also be an effective tool for complementing the reliability data obtained through the standard package level electromigration test. Committee(s): JC-14, JC-14.2 Free download. Registration or login required.
STANDARD METHOD FOR CALCULATING THE ELECTROMIGRATION MODEL PARAMETERS FOR CURRENT DENSITY AND TEMPERATURE: Status: Reaffirmed 4/17/23	JESD63	Apr 2023
This method provides procedures to calculate sample estimates and their confidence intervals for the electromigration model parameters of current density and temperature. The model parameter for current density is the exponent (n) to which the current density is raised in Black's equation. The parameter for temperature is the activation energy for the electromigration failure process. Committee(s): JC-14.2 Free download. Registration or login required.
STANDARD TEST STRUCTURE FOR RELIABILITY ASSESSMENT OF AlCu METALLIZATIONS WITH BARRIER MATERIALS Status: Reaffirmed 04/17/2023	JESD87	Apr 2023
This document describes design of test structures needed to assess the reliability of aluminum-copper, refractory metal barrier interconnect systems. This includes any metal interconnect system where a refractory metal barrier or other barrier material prevents the flow of aluminum and/or copper metal ions from moving between interconnect layers. This document is not intended to show design of test structures to assess aluminum or aluminum-copper alloy systems, without barriers to Al and Cu ion movement, nor for Cu only metal systems. Some total interconnect systems might not include barrier materials on all metal layers. The structures in this standard are designed for cases where a barrier material separates two Al or Al alloy metal layers. The purpose of this document is to describe the design of test structures needed to assess electromigration (EM) and stress-induced-void (SIV) reliability of AlCu barrier metal systems. Committee(s): JC-14.2, JC-14.21 Free download. Registration or login required.
METHOD FOR CHARACTERIZING THE ELECTROMIGRATION FAILURE TIME DISTRIBUTION OF INTERCONNECTS UNDER CONSTANT-CURRENT AND TEMPERATURE STRESS Status: Reaffirmed September 2018	JESD202	Mar 2006
This is an accelerated stress test method for determining sample estimates and their confidence limits of the median-time-to-failure, sigma, and early percentile of a log-Normal distribution, which are used to characterize the electromigration failure-time distribution of equivalent metal lines subjected to a constant current-density and temperature stress. Failure is defined as some pre-selected fractional increase in the resistance of the line under test. Analysis procedures are provided to analyze complete and singly, right-censored failure-time data. Sample calculations for complete and right-censored data are provided in Annex A. The analyses are not intended for the case when the failure distribution cannot be characterized by a single log-Normal distribution. Committee(s): JC-14, JC-14.2 Free download. Registration or login required.
FOUNDRY PROCESS QUALIFICATION GUIDELINES - BACKEND OF LIFE (Wafer Fabrication Manufacturing Sites)	JEP001-1A	Sep 2018
This document describes backend-level test and data methods for the qualification of semiconductor technologies. It does not give pass or fail values or recommend specific test equipment, test structures or test algorithms. Wherever possible, it references applicable JEDEC such as JESD47 or other widely accepted standards for requirements documentation. Committee(s): JC-14.2 Free download. Registration or login required.
A PROCEDURE FOR EXECUTING SWEAT: Status: Reaffirmed October 2012, September 2018	JEP119A	Aug 2003
This document describes an algorithm for performing the Standard Wafer Level Electromigration Accelerated Test (SWEAT) method with computer controlled instrumentation. The algorithm requires a separate iterative technique (not provided) to calculate the force current for a given target time to failure. This document does not specify what test structure to use with this procedure. However, users of this algorithm report its effectiveness on both straight-lines and via-terminated test structures. Some test-structures design features are provided in JESD87 and in ASTM 1259M - 96. Committee(s): JC-14.2 Free download. Registration or login required.