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GUIDELINE FOR EVALUATING BIAS TEMPERATURE INSTABILITY OF SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR DEVICES FOR POWER ELECTRONIC CONVERSION
The scope of this document covers SiC-based PECS devices having a gate dielectric region biased to turn devices on and off. This typically refers to MOS devices such as MOSFETs and IGBTs. In this document, only NMOS devices are discussed as these are dominant for power device applications; however, the procedures apply to PMOS devices as well.
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